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50N06G-TA3-T

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

器件类别：分立半导体    晶体管   

厂商名称：UNISONIC TECHNOLOGIES CO.,LTD

厂商官网：http://www.unisonic.com.tw/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码
TO-220AB
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
雪崩能效等级（Eas）
480 mJ
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
60 V
最大漏极电流 (Abs) (ID)
50 A
最大漏极电流 (ID)
50 A
最大漏源导通电阻
0.023 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
120 W
最大脉冲漏极电流 (IDM)
200 A
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
UNISONIC TECHNOLOGIES CO., LTD
50N06
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
TO-252
Power MOSFET
DESCRIPTION
The UTC
50N06
is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
1
TO-251
FEATURES
* R
DS(ON)
= 23mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
1
TO-220
1
TO-220F
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
50N06L-TA3-T
50N06G-TA3-T
50N06L-TF3-T
50N06G-TF3-T
50N60L-TM3-T
50N60G-TM3-T
50N06L-TN3-R
50N06G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
50N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
Package
TO-220
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TF3: TO-220F, TN3: TO-252,
TM3: TO-251
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-088.E
50N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate-Source Voltage
±20
V
T
C
= 25°C
50
A
Continuous Drain Current
I
D
T
C
= 100°C
35
A
Pulsed Drain Current (Note 2)
I
DM
200
A
Single Pulsed (Note 3)
E
AS
480
mJ
Avalanche Energy
13
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
V/ns
TO-220
120
W
TO-220F
70
W
Power Dissipation (T
C
=25°C)
P
D
TO-251
136
W
TO-252
136
W
Junction Temperature
T
J
+150
°C
Operation and Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by T
J
3. L=0.38mH, I
AS
=50A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
4. I
SD
≤50A,
di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
SYMBOL
θ
JA
RATING
62
62
100
100
1.24
1.78
1.1
1.1
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Case
θ
JC
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
60
10
100
-100
0.07
2.0
18
4.0
23
V
μA
nA
nA
V/°C
V
mΩ
pF
pF
pF
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
I
GSS
V
GS
= -20V, V
DS
= 0 V
I = 250
μA,
△
BV
DSS
/△T
J D
Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 25 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
900 1220
430 550
80 100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-088.E
50N06
ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 30V, I
D
=25 A,
Turn-On Rise Time
t
R
R
G
= 50Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 48V, V
GS
= 10 V
Gate-Source Charge
Q
GS
I
D
= 50A (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
I
S
= 50A, V
GS
= 0 V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
I
S
= 50A, V
GS
= 0 V
dI
F
/ dt = 100 A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature
Power MOSFET
40
100
90
80
30
9.6
10
60
200
180
160
40
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
1.5
50
200
54
81
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-088.E
50N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-088.E
50N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
G
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-088.E
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参数对比
与50N06G-TA3-T相近的元器件有：50N06、50N06L-TN3-R、50N60G-TM3-T、50N06G-TF3-T、50N06L-TA3-T、50N06_11、50N60L-TM3-T、50N06L-TF3-T、50N06G-TN3-R。描述及对比如下：
型号 50N06G-TA3-T 50N06 50N06L-TN3-R 50N60G-TM3-T 50N06G-TF3-T 50N06L-TA3-T 50N06_11 50N60L-TM3-T 50N06L-TF3-T 50N06G-TN3-R
描述 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET
是否Rohs认证 符合 - 符合 - 符合 符合 - - 符合 符合
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码 TO-220AB - TO-252 - TO-220AB TO-220AB - - TO-220AB TO-252
包装说明 FLANGE MOUNT, R-PSFM-T3 - LEAD FREE PACKAGE-3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - - FLANGE MOUNT, R-PSFM-T3 HALOGEN FREE PACKAGE-3
针数 3 - 4 - 3 3 - - 3 4
Reach Compliance Code compli - compli - compli compli - - compli compli
ECCN代码 EAR99 - EAR99 - EAR99 EAR99 - - EAR99 EAR99
雪崩能效等级（Eas） 480 mJ - 480 mJ - 480 mJ 480 mJ - - 480 mJ 480 mJ
配置 SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V - 60 V - 60 V 60 V - - 60 V 60 V
最大漏极电流 (Abs) (ID) 50 A - 50 A - 50 A 50 A - - 50 A 50 A
最大漏极电流 (ID) 50 A - 50 A - 50 A 50 A - - 50 A 50 A
最大漏源导通电阻 0.023 Ω - 0.023 Ω - 0.023 Ω 0.023 Ω - - 0.023 Ω 0.023 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-220AB - TO-252 - TO-220AB TO-220AB - - TO-220AB TO-252
JESD-30 代码 R-PSFM-T3 - R-PSSO-G2 - R-PSFM-T3 R-PSFM-T3 - - R-PSFM-T3 R-PSSO-G2
元件数量 1 - 1 - 1 1 - - 1 1
端子数量 3 - 2 - 3 3 - - 3 2
工作模式 ENHANCEMENT MODE - ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE - - ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C - 150 °C - 150 °C 150 °C - - 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT - SMALL OUTLINE - FLANGE MOUNT FLANGE MOUNT - - FLANGE MOUNT SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL - N-CHANNEL - N-CHANNEL N-CHANNEL - - N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 120 W - 46 W - 70 W 120 W - - 70 W 46 W
最大脉冲漏极电流 (IDM) 200 A - 200 A - 200 A 200 A - - 200 A 200 A
认证状态 Not Qualified - Not Qualified - Not Qualified Not Qualified - - Not Qualified Not Qualified
表面贴装 NO - YES - NO NO - - NO YES
端子形式 THROUGH-HOLE - GULL WING - THROUGH-HOLE THROUGH-HOLE - - THROUGH-HOLE GULL WING
端子位置 SINGLE - SINGLE - SINGLE SINGLE - - SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING - SWITCHING - SWITCHING SWITCHING - - SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON - SILICON SILICON - - SILICON SILICON
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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