5962H9654901QEA,5962H9654901QEA pdf中文资料,5962H9654901QEA引脚图,5962H9654901QEA电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

包装说明

DIP, DIP16,.3

Reach Compliance Code

unknown

ECCN代码

3A001.A.1.A

系列

ACT

JESD-30 代码

R-XDIP-T16

JESD-609代码

长度

19.05 mm

负载电容（CL）

50 pF

逻辑集成电路类型

MULTIPLEXER

最大I（ol）

0.008 A

功能数量

输入次数

输出次数

端子数量

最高工作温度

125 °C

最低工作温度

-55 °C

输出极性

COMPLEMENTARY

封装主体材料

CERAMIC, METAL-SEALED COFIRED

封装代码

DIP

封装等效代码

DIP16,.3

封装形状

RECTANGULAR

封装形式

IN-LINE

电源

5 V

Prop。Delay @ Nom-Sup

25 ns

传播延迟（tpd）

25 ns

认证状态

Qualified

筛选级别

38535Q/M;38534H;883B

座面最大高度

5.08 mm

最大供电电压 (Vsup)

5.5 V

最小供电电压 (Vsup)

4.5 V

标称供电电压 (Vsup)

5 V

表面贴装

技术

CMOS

温度等级

MILITARY

端子面层

TIN LEAD

端子形式

THROUGH-HOLE

端子节距

2.54 mm

端子位置

DUAL

总剂量

1M Rad(Si) V

宽度

7.62 mm

Base Number Matches

参数对比

与5962H9654901QEA相近的元器件有：5962H9654901VEC、5962H9654901QEC、5962H9654901QXA、5962H9654901QXC、5962H9654901VEA、5962H9654901VXA、5962H9654901VXC。描述及对比如下：

型号	5962H9654901QEA	5962H9654901VEC	5962H9654901QEC	5962H9654901QXA	5962H9654901QXC	5962H9654901VEA	5962H9654901VXA	5962H9654901VXC
描述	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16	Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16
包装说明	DIP, DIP16,.3	DIP, DIP16,.3	DIP, DIP16,.3	DFP, FL16,.3	DFP, FL16,.3	DIP, DIP16,.3	DFP, FL16,.3	DFP, FL16,.3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A
系列	ACT	ACT	ACT	ACT	ACT	ACT	ACT	ACT
JESD-30 代码	R-XDIP-T16	R-XDIP-T16	R-XDIP-T16	R-XDFP-F16	R-XDFP-F16	R-XDIP-T16	R-XDFP-F16	R-XDFP-F16
JESD-609代码	e0	e4	e4	e0	e4	e0	e0	e4
负载电容（CL）	50 pF	50 pF	50 pF	50 pF	50 pF	50 pF	50 pF	50 pF
逻辑集成电路类型	MULTIPLEXER	MULTIPLEXER	MULTIPLEXER	MULTIPLEXER	MULTIPLEXER	MULTIPLEXER	MULTIPLEXER	MULTIPLEXER
最大I（ol）	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A
功能数量	1	1	1	1	1	1	1	1
输入次数	8	8	8	8	8	8	8	8
输出次数	1	1	1	1	1	1	1	1
端子数量	16	16	16	16	16	16	16	16
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
输出极性	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP	DIP	DIP	DFP	DFP	DIP	DFP	DFP
封装等效代码	DIP16,.3	DIP16,.3	DIP16,.3	FL16,.3	FL16,.3	DIP16,.3	FL16,.3	FL16,.3
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	FLATPACK	FLATPACK	IN-LINE	FLATPACK	FLATPACK
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Prop。Delay @ Nom-Sup	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns
传播延迟（tpd）	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns
认证状态	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
筛选级别	38535Q/M;38534H;883B	38535V;38534K;883S	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535V;38534K;883S	38535V;38534K;883S	38535V;38534K;883S
座面最大高度	5.08 mm	5.08 mm	5.08 mm	2.921 mm	2.921 mm	5.08 mm	2.921 mm	2.921 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	YES	YES	NO	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子面层	TIN LEAD	GOLD	GOLD	TIN LEAD	GOLD	TIN LEAD	TIN LEAD	GOLD
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	FLAT	FLAT	THROUGH-HOLE	FLAT	FLAT
端子节距	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
总剂量	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V
宽度	7.62 mm	7.62 mm	7.62 mm	6.731 mm	6.731 mm	7.62 mm	6.731 mm	6.731 mm
Base Number Matches	1	1	1	1	1	1	1	1