UNISONIC TECHNOLOGIES CO., LTD
8N80
Preliminary
Power MOSFET
800V N-CHANNEL MOSFET
DESCRIPTION
The UTC
8N80
is an N-channel mode Power FET, it uses UTC’s
advanced technology to provide costumers planar stripe and DMOS
technology. This technology allows a minimum on-state resistance,
superior switching performance. It also can withstand high energy
pulse in the avalanche and commutation mode.
The UTC
8N80
is generally applied in high efficiency switch mode
power supplies.
1
TO-220
1
FEATURES
* Typically 35 nC Low Gate Charge
* 8A, 800V, R
DS(on)
= 1.55Ω @V
GS
= 10 V
* Typically 13 pF Low Crss
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
TO-220F1
SYMBOL
D
G
S
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF1-T
8N80G-TF1-T
Note: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-471.a
8N80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Drain Current (Continuous) (T
C
=25°C)
I
D
8
A
Drain Current (Pulsed) (Note 1)
I
DM
32
A
Avalanche Current (Note 1)
I
AR
8
A
Single Pulse Avalanche Energy (Note 2)
E
AS
850
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
17.8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Total Power Dissipation (T
C
=25°C)
178
W
P
D
Linear Derating Factor above T
C
=25°C
1.43
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
8A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
SYMBOL
RATINGS
UNIT
θ
JA
62.5
°C/W
θ
JC
0.7
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
800
V
Breakdown Voltage Temperature
△BV
DSS
/△T
J
Reference to 25°C, I
D
=250µA
0.5
V/°C
Coefficient
V
DS
=800V, V
GS
=0V
10
Drain-Source Leakage Current
I
DSS
µA
V
DS
=640V, T
C
=125°C
100
Gate- Source Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
0.94 1.55
Ω
Forward Transconductance (Note 1)
g
FS
V
DS
=50V, I
D
=4A
5.6
S
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
1580 2050 pF
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
135 175 pF
13
17
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 1, Note 2)
Total Gate Charge
Q
G
35
45
nC
V
GS
=10V, V
DS
=640V, I
D
=8A
Gate to Source Charge
Q
GS
10
nC
Gate to Drain Charge
Q
GD
14
nC
Turn-ON Delay Time
t
D(ON)
40
90
ns
Rise Time
t
R
110 230
ns
V
DD
=400V, I
D
=8A, R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
65
140
ns
Fall-Time
t
F
70
150
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
8
A
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
32
A
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=8A, V
GS
=0V
1.4
V
Reverse Recovery Time (Note 1)
t
RR
690
ns
I
S
=8A, V
GS
=0V, dI
F
/dt=100A/µs
Reverse Recovery Charge (Note 1)
Q
RR
8.2
µC
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-471.a
8N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-471.a
8N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-471.a
8N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-471.a
嵌入式系统
