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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BF824W
PNP medium frequency transistor
Product data sheet
Supersedes data of 1997 Jul 07
1999 Apr 15
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
FEATURES
•
Low current (max. 25 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic
package.
1
handbook, halfpage
BF824W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BF824W
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
MARKING CODE
(1)
F8∗
1
Top view
2
MAM048
2
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−30
−30
−4
−25
−25
200
+150
150
+150
V
V
V
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 15
2
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
BE
C
rb
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
= 0; V
CE
=
−10
V; f = 1 MHz
V
CE
=
−10
V; f = 100 MHz; note 1
I
C
=
−1
mA
I
C
=
−4
mA
I
C
=
−8
mA
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
250
400
390
−
−
−
−
−
−
25
25
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
BF824W
UNIT
K/W
MAX.
−50
−10
−100
−
−
−900
0.3
UNIT
nA
µA
nA
mV
pF
MHz
MHz
MHz
1999 Apr 15
3
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BF824W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 15
4
