TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
厂商名称:NXP(恩智浦)
厂商官网:https://www.nxp.com
下载文档型号 | 934055356118 | 934054480127 | 934054490118 |
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描述 | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 70 mJ | 70 mJ | 70 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 55 V | 55 V | 55 V |
最大漏极电流 (ID) | 44 A | 44 A | 44 A |
最大漏源导通电阻 | 0.028 Ω | 0.028 Ω | 0.028 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 |
端子数量 | 2 | 3 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 176 A | 176 A | 176 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | NO | YES |
端子形式 | GULL WING | THROUGH-HOLE | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | - |
厂商名称 | - | NXP(恩智浦) | NXP(恩智浦) |
其他特性 | - | LOGIC LEVEL COMPATIBLE, FAST SWITCHING | LOGIC LEVEL COMPATIBLE, FAST SWITCHING |