This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.3 Jul 12, 2005
1/5
AF2302N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
=4.5V
(Note 1)
Pulsed Drain Current
(Note 2, 3)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
20
±12
3.2
2.6
10
1.38
0.01
-55 to +150
-55 to +150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
R
θJA
Parameter
Thermal Resistance Junction-Ambient
(Note 1)
Max.
Limit
90
Units
ºC/W
Electrical Characteristics
(T
J
=25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25ºC,
I
D
=1mA
V
GS
=4.5V, I
D
=3.6A
V
GS
=2.5V, I
D
=3.1A
V
DS
= V
GS
, I
D
=250uA
V
DS
=5V, I
D
=3.6A
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=±12V
V
DS
=10V, I
D
=3.6A,
V
GS
=4.5V
V
DS
=10V, R
D
=2.8Ω,
I
D
=3.6A, V
GS
=5V,
R
G
=6Ω
V
DS
=10V, V
GS
=0V,
f=1.0MHz
BV
DSS
Drain-Source Breakdown Voltage
∆
BV
DSS
/ Breakdown Voltage Temperature
Coefficient
∆
T
J
Static Drain-Source On-Resistance
R
DS(ON)
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.1
-
-
-
6
-
-
-
4.4
0.6
1.9
5.2
37
15
5.7
145
100
50
Max.
-
-
85
115
1.2
-
1
10
±100
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ºC
mΩ
V
S
uA
nA
nC
(Note 3)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
T
J
=25ºC
Current
T
J
=70ºC
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nS
pF
Source-Drain Diode
Symbol
I
S
I
SM
Parameter
Continuous Source Current (Body
Diode)
Pulsed Source Current (Body Diode)
(Note 2)
Test Conditions
V
D
=V
G
=0V, V
S
=1.2V
Min.
-
-
Typ.
-
-
-
Max.
1
10
1.2
Unit
A
A
V
V
SD
Forward On Voltage
(Note 3)
I
S
=1.6A, V
GS
=0V
-
2
o
Note 1:
Surface mounted on 1 in copper pad of FR4 board; 270 C/W when mounted on min. copper pad.
stm32/stm8
