型号
- 型号
- 关键词
| 型号 | ALD110808ASCL | ALD110908ASAL | ALD110908PAL | ALD110808SCL |
|---|---|---|---|---|
| 描述 | MOSFET Quad EPAD(R) N-Ch | MOSFET Dual EPAD(R) N-Ch | MOSFET Dual EPAD(R) N-Ch | MOSFET Quad EPAD(R) N-Ch |
| Product Attribute | Attribute Value | Attribute Value | Attribute Value | Attribute Value |
| 制造商 Manufacturer |
Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| 产品种类 Product Category |
MOSFET | MOSFET | MOSFET | MOSFET |
| Shipping Restrictions | This product may require additional documentation to export from the United States. | This product may require additional documentation to export from the United States. | This product may require additional documentation to export from the United States. | This product may require additional documentation to export from the United States. |
| RoHS | Details | Details | Details | Details |
| 技术 Technology |
Si | Si | Si | Si |
| 安装风格 Mounting Style |
SMD/SMT | SMD/SMT | Through Hole | SMD/SMT |
| 封装 / 箱体 Package / Case |
SOIC-16 | SOIC-8 | PDIP-8 | SOIC-16 |
| Number of Channels | 4 Channel | 2 Channel | 2 Channel | 4 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 10 V | 10 V, 10 V | 10 V | 10 V |
| Id - Continuous Drain Current | 12 mA | 12 mA, 12 mA | 12 mA | 12 mA |
| Rds On - Drain-Source Resistance | 500 Ohms | 500 Ohms, 500 Ohms | 500 Ohms | 500 Ohms |
| Vgs - Gate-Source Voltage | 10.6 V | 10.6 V, 10.6 V | 10.6 V | 10.6 V |
| 最小工作温度 Minimum Operating Temperature |
0 C | 0 C | 0 C | 0 C |
| 最大工作温度 Maximum Operating Temperature |
+ 70 C | + 70 C | + 70 C | + 70 C |
| Configuration | Quad | Dual | Dual | Quad |
| Pd-功率耗散 Pd - Power Dissipation |
500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Channel Mode | Depletion | Enhancement | Depletion | Depletion |
| 系列 Packaging |
Tube | Tube | Tube | Tube |
| 产品 Product |
MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Transistor Type | 4 N-Channel | 2 N-Channel | 2 N-Channel | 4 N-Channel |
| 类型 Type |
MOSFET | MOSFET | MOSFET | MOSFET |
| 工厂包装数量 Factory Pack Quantity |
50 | 50 | 50 | 50 |
| Typical Turn-Off Delay Time | 10 ns | 10 ns, 10 ns | 10 ns | 10 ns |
| Typical Turn-On Delay Time | 10 ns | 10 ns, 10 ns | 10 ns | 10 ns |
| 单位重量 Unit Weight |
0.023492 oz | 0.002998 oz | 0.032805 oz | 0.023492 oz |
| Forward Transconductance - Min | 0.0014 S | - | 0.0014 S | 0.0014 S |
