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ALD110908PAL

MOSFET Dual EPAD(R) N-Ch

器件类别:半导体    分立半导体   

厂商名称:Advanced Linear Devices

器件标准:

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Advanced Linear Devices
产品种类
Product Category
MOSFET
Shipping Restrictions
This product may require additional documentation to export from the United States.
RoHS
Details
技术
Technology
Si
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
PDIP-8
Number of Channels
2 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
10 V
Id - Continuous Drain Current
12 mA
Rds On - Drain-Source Resistance
500 Ohms
Vgs - Gate-Source Voltage
10.6 V
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 70 C
Configuration
Dual
Pd-功率耗散
Pd - Power Dissipation
500 mW (1/2 W)
Channel Mode
Depletion
系列
Packaging
Tube
产品
Product
MOSFET Small Signal
Transistor Type
2 N-Channel
类型
Type
MOSFET
Forward Transconductance - Min
0.0014 S
工厂包装数量
Factory Pack Quantity
50
Typical Turn-Off Delay Time
10 ns
Typical Turn-On Delay Time
10 ns
单位重量
Unit Weight
0.032805 oz
参数对比
与ALD110908PAL相近的元器件有:ALD110908ASAL、ALD110808ASCL、ALD110808SCL。描述及对比如下:
型号 ALD110908PAL ALD110908ASAL ALD110808ASCL ALD110808SCL
描述 MOSFET Dual EPAD(R) N-Ch MOSFET Dual EPAD(R) N-Ch MOSFET Quad EPAD(R) N-Ch MOSFET Quad EPAD(R) N-Ch
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
Advanced Linear Devices Advanced Linear Devices Advanced Linear Devices Advanced Linear Devices
产品种类
Product Category
MOSFET MOSFET MOSFET MOSFET
Shipping Restrictions This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States.
RoHS Details Details Details Details
技术
Technology
Si Si Si Si
安装风格
Mounting Style
Through Hole SMD/SMT SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
PDIP-8 SOIC-8 SOIC-16 SOIC-16
Number of Channels 2 Channel 2 Channel 4 Channel 4 Channel
Transistor Polarity N-Channel N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 10 V 10 V, 10 V 10 V 10 V
Id - Continuous Drain Current 12 mA 12 mA, 12 mA 12 mA 12 mA
Rds On - Drain-Source Resistance 500 Ohms 500 Ohms, 500 Ohms 500 Ohms 500 Ohms
Vgs - Gate-Source Voltage 10.6 V 10.6 V, 10.6 V 10.6 V 10.6 V
最小工作温度
Minimum Operating Temperature
0 C 0 C 0 C 0 C
最大工作温度
Maximum Operating Temperature
+ 70 C + 70 C + 70 C + 70 C
Configuration Dual Dual Quad Quad
Pd-功率耗散
Pd - Power Dissipation
500 mW (1/2 W) 500 mW (1/2 W) 500 mW (1/2 W) 500 mW (1/2 W)
Channel Mode Depletion Enhancement Depletion Depletion
系列
Packaging
Tube Tube Tube Tube
产品
Product
MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal
Transistor Type 2 N-Channel 2 N-Channel 4 N-Channel 4 N-Channel
类型
Type
MOSFET MOSFET MOSFET MOSFET
工厂包装数量
Factory Pack Quantity
50 50 50 50
Typical Turn-Off Delay Time 10 ns 10 ns, 10 ns 10 ns 10 ns
Typical Turn-On Delay Time 10 ns 10 ns, 10 ns 10 ns 10 ns
单位重量
Unit Weight
0.032805 oz 0.002998 oz 0.023492 oz 0.023492 oz
Forward Transconductance - Min 0.0014 S - 0.0014 S 0.0014 S
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