型号 | ALD110908PAL | ALD110908ASAL | ALD110808ASCL | ALD110808SCL |
---|---|---|---|---|
描述 | MOSFET Dual EPAD(R) N-Ch | MOSFET Dual EPAD(R) N-Ch | MOSFET Quad EPAD(R) N-Ch | MOSFET Quad EPAD(R) N-Ch |
Product Attribute | Attribute Value | Attribute Value | Attribute Value | Attribute Value |
制造商 Manufacturer |
Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
产品种类 Product Category |
MOSFET | MOSFET | MOSFET | MOSFET |
Shipping Restrictions | This product may require additional documentation to export from the United States. | This product may require additional documentation to export from the United States. | This product may require additional documentation to export from the United States. | This product may require additional documentation to export from the United States. |
RoHS | Details | Details | Details | Details |
技术 Technology |
Si | Si | Si | Si |
安装风格 Mounting Style |
Through Hole | SMD/SMT | SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
PDIP-8 | SOIC-8 | SOIC-16 | SOIC-16 |
Number of Channels | 2 Channel | 2 Channel | 4 Channel | 4 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 10 V | 10 V, 10 V | 10 V | 10 V |
Id - Continuous Drain Current | 12 mA | 12 mA, 12 mA | 12 mA | 12 mA |
Rds On - Drain-Source Resistance | 500 Ohms | 500 Ohms, 500 Ohms | 500 Ohms | 500 Ohms |
Vgs - Gate-Source Voltage | 10.6 V | 10.6 V, 10.6 V | 10.6 V | 10.6 V |
最小工作温度 Minimum Operating Temperature |
0 C | 0 C | 0 C | 0 C |
最大工作温度 Maximum Operating Temperature |
+ 70 C | + 70 C | + 70 C | + 70 C |
Configuration | Dual | Dual | Quad | Quad |
Pd-功率耗散 Pd - Power Dissipation |
500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
Channel Mode | Depletion | Enhancement | Depletion | Depletion |
系列 Packaging |
Tube | Tube | Tube | Tube |
产品 Product |
MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Transistor Type | 2 N-Channel | 2 N-Channel | 4 N-Channel | 4 N-Channel |
类型 Type |
MOSFET | MOSFET | MOSFET | MOSFET |
工厂包装数量 Factory Pack Quantity |
50 | 50 | 50 | 50 |
Typical Turn-Off Delay Time | 10 ns | 10 ns, 10 ns | 10 ns | 10 ns |
Typical Turn-On Delay Time | 10 ns | 10 ns, 10 ns | 10 ns | 10 ns |
单位重量 Unit Weight |
0.032805 oz | 0.002998 oz | 0.023492 oz | 0.023492 oz |
Forward Transconductance - Min | 0.0014 S | - | 0.0014 S | 0.0014 S |