numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
88A
di
/
dt
≤
700A/µs
VR
≤
500
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10
-5
0.1
0.05
10
-4
10
-3
SINGLE PULSE
10
0.3
0.5
Note:
PDM
t1
t2
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
0.9
0.7
050-7030 Rev D
4-2004
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
RC MODEL
300
15 &10V
I
D
, DRAIN CURRENT (AMPERES)
APT50M38JFLL
8V
7.5V
7V
Junction
temp. ( ”C)
0.0244
0.0731F
250
200
150
100
50
0
Power
(Watts)
0.133
0.701F
6.5V
0.0218
Case temperature
20.1F
6V
5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
V
GS
250
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
= 10V @ 45.5A
I
D
, DRAIN CURRENT (AMPERES)
200
1.3
1.2
1.1
1.0
VGS=20V
0.9
0.8
VGS=10V
150
TJ = -55°C
TJ = +125°C
TJ = +25°C
100
50
0
0
1
2
3
4
5
6
7
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
20 40 60 80 100 120 140 160 180
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
90
80
I
D
, DRAIN CURRENT (AMPERES)
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
2.5
I
D
= 45.5A
= 10V
V
GS
2.0
1.5
1.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7030 Rev D
4-2004
352
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
40,000
100µS
10,000
C, CAPACITANCE (pF)
APT50M38JFLL
Ciss
100
Coss
1,000
1mS
10
10mS
100
Crss
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 91A
400
12
VDS=100V
VDS=250V
8
VDS=400V
100
TJ =+150°C
TJ =+25°C
10
4
100 150 200 250 300 350 400
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
140
120
100
80
60
40
20
0
20
t
d(off)
0
0
50
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
100
80
V
DD
G
= 333V
R
= 5Ω
T = 125°C
J
L = 100µH
V
DD
G
t
d(on)
and t
d(off)
(ns)
t
f
= 333V
R
= 5Ω
T = 125°C
J
t
r
and t
f
(ns)
L = 100µH
60
40
20
0
20
t
d(on)
t
r
40
60
80
100
120
140
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
G
40
60
80
100
120
140
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3500
3000
SWITCHING ENERGY (µJ)
3500
3000
SWITCHING ENERGY (µJ)
V
= 333V
R
= 5Ω
E
off
T = 125°C
J
L = 100µH
2500
2000
1500
1000
500
E
ON
includes
diode reverse recovery.
2500
2000
1500
V
DD
E
on
E
on
= 333V
4-2004
1000
500
0
I
D
J
= 88A
E
off
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7030 Rev D
80
100
120
140
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
20
40
60
5
10
15
20
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
Typical Performance Curves
90%
10%
Gate Voltage
T
J
125°C
APT50M38JFLL
Gate Voltage
t
d(on)
t
d(off)
T
J
125°C
90%
Drain Voltage
t
f
t
r
90%
5%
10%
Switching Energy
5%
Drain Voltage
Switching Energy
Drain Current
10%
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-on Switching Waveforms and Definitions
APT60DF60
V
DD
I
C
V
CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Dimensions in Millimeters and (Inches)
ISOTOP
®
is a Registered Trademark of SGS Thomson.
Gate
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
