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APTLGF300U120T

Insulated Gate Bipolar Transistor

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
厂商名称
Microsemi
包装说明
,
Reach Compliance Code
compliant
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APTLGF300U120T
Zero Voltage switching
Single switch
NPT IGBT Power Module
+12V
GND
UNDERVOLTAGE
LOCKOUT
_
Q
ISOLATED
AUXILIARY
POWER
SUPPLY
V
CES
= 1200V
I
C
=
300A @ Tc = 80°C
Application
Wide output range converters
Induction heating
X-Ray power supplies
ZVS-PWM Uninterruptible Power Supplies
High frequency, high density, high efficiency
power supplies
Welder
Features
Integrated power and driver circuits
Integrated DC/DC converter
80kHz switching frequency without high
switching losses using ZVS technique
low EMI and RFI
isolated input signals
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlSiC base plate for extended reliability
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power
for easy PCB mounting
C1
C2
+15V
SIGNAL
PROCESSING
HIGH
FREQUENCY
TRANSFORMER
DRIVER
INH
CIRCUIT
E0
S0
NTC1
HIGH
FREQUENCY
TRANSFORMER
FORCED
START UP
CIRCUIT
-15V
0V
E1
E2
NTC2
C1
S1
C2
S2
For all ratings, C1 & C2 are connected together, same for E1 & E2.
Symbol
Parameter
Collector - Emitter Breakdown Voltage
V
CE
I
C
I
CM
P
D
F
S(Max)
V
AUX
Q, Q
Continuous Collector Current
Pulsed Collector Current
IGBT Total Power Dissipation
Diode Total Power Dissipation
Maximum Operating Frequency
Isolated Auxiliary Power Supply Voltage
Input Signal Voltage
Absolute maximum ratings
+12V
GND
NTC1
¯
Q
INH
E0
S0
NTC2
1
J10
A
W
kHz
V
T
C
= 25°C
T
C
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-8
APTLGF300U120T – Rev 1
December, 2003
T
C
= 25°C
T
C
= 80°C
Max ratings
1200
400
300
800
2250
1250
80
13
13.6
Unit
V
APTLGF300U120T
Static Electrical Characteristics
Symbol
BV
CES
I
CES
V
CE(on)
Characteristic
Collector Emitter Breakdown Voltage
Collector Emitter on Voltage
Zero Gate Voltage Collector Current
Test Conditions
Ic=2mA
Q or Q High
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
V
CC
= 800V, V
GE
= 0V
Min
1200
Typ
2.7
3.3
Max
3.2
3.9
3000
Unit
V
V
µA
Dynamic Electrical Characteristics
Symbol
C
oes
C
res
E
0
-S
0
P
W
(E
0
-S
0
)
INH
E
off
Characteristic
Output Capacitance
Reverse Transfer Capacitance
Forced Startup Voltage Level
Forced Startup Pulse Width
Inhibit Voltage Level (Active Level)
Turn-off Switching Energy
Test Conditions
Q or Q = 0V
V
CE
= 25V, f = 1MHz
Min
Typ
3680
1760
Max
Unit
pF
See figures 8, 9 & 11
See figures 8 & 9
See figures 4 & 10
V
CC
= 600V
T
j
= 25°C
I
C
= 400A
T
j
= 125°C
T
j
= 25°C
V
CC
= 600V
I
C
= 200A
T
j
= 125°C
10
1
-0.6
31
34
15.5
17
12
4
1
V
µs
V
mJ
Freewheeling Diode Characteristics
Symbol Characteristic
V
RRM
Max. Peak Repetitive Reverse Voltage
V
F
I
F(av)
t
rr
Q
rr
Diode Forward Voltage
Maximum Average Forward Current
Reverse Recovery Time
Reverse recovery Charge
Test Conditions
I
F
= 400A
I
F
= 800A
I
F
= 400A
Duty cycle=50%
Min
1200
Typ
Max
2.5
Unit
V
A
ns
µC
2.7
T
j
= 150°C
T
C
= 60°C
T
j
= 25°C
T
j
= 100°C
T
j
= 25°C
T
j
= 100°C
2.0
400
70
130
5
14.6
I
F
= 400A
V
R
= 650V
di/dt=800A/µs
I
F
= 400A
V
R
= 650V
di/dt=800A/µs
Driver Characteristics
Symbol Characteristic
V
AUX
Isolated Auxiliary Power Supply Voltage
I
AUX
Isolated Auxiliary Power Supply Current
Q, Q
IQ, IQ
Test Conditions
Min
11
-0.6
10
Typ
12
Blocking Signal Input Voltage
Blocking Signal Input Current
Turn-on Delay Time
Turn-off Delay Time
Low level
High level
See figure 5
See figure 4
Max
13
1.5
1
13.6
5
Unit
V
A
V
mA
ns
ns
December, 2003
2-8
APTLGF300U120T – Rev 1
T
d(on)
T
d(off)
500
500
APT website – http://www.advancedpower.com
APTLGF300U120T
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case
t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
IGBT
Diode
2500
-40
-40
-40
2
2
150
125
100
3.5
3.5
330
Min
Typ
Max
0.055
0.1
Unit
°C/W
V
°C
N.m
g
To heatsink
For terminals
M5
M5
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.16 K
Min
Typ
68
4080
Max
Unit
kΩ
K
R
T
=
R
25
exp
B
25 / 85
1
1
T
25
T
T: Thermistor temperature
R
T
: Thermistor value at T
Package outline
APT website – http://www.advancedpower.com
3-8
APTLGF300U120T – Rev 1
December, 2003
Ra 3,2
APTLGF300U120T
NTC Characteristics
R@25° = 68k
±5%
C
Temperature R(T)/R@25°C
(°C)
-30
19,33
-25
14,12
-20
10,41
-15
7,758
-10
5,834
-5
4,426
0
3,387
5
2,614
10
2,033
15
1,593
20
1,258
25
1
30
0,8004
35
0,6448
40
0,5228
45
0,4264
50
0,3497
55
0,2885
60
0,2392
65
0,1994
70
0,1671
75
0,1406
80
0,1189
85
0,101
90
0,08617
95
0,07381
100
0,06347
105
0,0548
110
0,04748
115
0,04129
120
0,03603
0,03155
125
Tolerance
(%)
10,9
9,1
7,5
6,1
4,9
3,8
2,9
2,1
1,4
0,9
0,4
0
0,4
0,8
1,3
1,8
2,3
2,9
3,5
4,1
4,8
5,5
6,2
6,9
7,6
8,3
9,1
9,8
10,6
11,3
12,1
12,9
21
17
R(T) / R@25°
C
13
9
5
1
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
Temperature (°C)
Figure 1, Normalized NTC Characteristics -30°C to 25°C
1
0,8
R(T) / R@25°
C
0,6
0,4
0,2
0
25
35
45
55
65
75
85
95
105
115
125
Temperature (°C)
Figure 2, Norm alized NTC Characteristics 25°C to 125°C
14
12
Tolerance (%)
10
8
6
4
2
Table 1, NTC Characteristics
-30 -20 -10
0
10
20
30
40
50
60
70
80
90 100 110 120
Temperature (°C)
Figure 3, NTC Tolerance vs Temperature
APT website – http://www.advancedpower.com
4-8
APTLGF300U120T – Rev 1
December, 2003
0
APTLGF300U120T
Turn-Off Delay Time
.
Figure 4
.
Turn-On Delay Time
.
Figure 5
.
35
Turn-off Switching Energy (mJ)
VBUS
30
25
20
15
10
5
0
0
C
MODULE 1
Fmax, Operating Frequency (kHz)
C1
C2
E1
E2
C1
C2
E1
E2
T
J
=125°C
without C
T
J
=25°C
without C
100
80
Without C
60
40
20
0
0
50
MODULE 1
VBUS
C1
C2
E1
E2
C1
C2
E1
E2
C
C = 47nF
OUT
C
MODULE 2
0/VBUS
T
J
=125°C with
C=47nF
T
J
=25°C with
C=47nF
OUT
C
MODULE 2
0/VBUS
50
100 150 200 250 300 350 400
100 150 200 250
300 350 400
I
CE
, Collector to Emitter Current (A)
I
C
, Collector Current (A)
Figure 6: Turn-Off Energy losses vs Collector Current
Figure 7: Operating Frequency vs Collector Current
APT website – http://www.advancedpower.com
5-8
APTLGF300U120T – Rev 1
December, 2003
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参数对比
与APTLGF300U120T相近的元器件有:。描述及对比如下:
型号 APTLGF300U120T
描述 Insulated Gate Bipolar Transistor
厂商名称 Microsemi
Reach Compliance Code compliant
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