AS1C1M16P-70BIN
Revision History
16M
(1M x 16 bit)
PSEUDO STATIC RAM
48ball
FPBGA
Package
Revision
Rev 1.0
Details
Preliminary datasheet
Date
Aug 2018
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice
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Rev.1.0 Aug. 2018
AS1C1M16P-70BIN
1Mb x16 Pseudo Static RAM Specification
GENERAL DESCRIPTION
The AS1C1M16P-70BIN is 16,777,216 bits of Pseudo SRAM which uses DRAM type memory cells, but
this device has refresh-free operation and extreme low power consumption technology. Furthermore the
interface is compatible to a low power Asynchronous type SRAM. The AS1C1M16P-70BIN is
organized as 1,048,576 Words x 16 bit.
FEATURES
- Organization :1M x16
-
Address access speed 70ns
- Power Supply Voltage : 2.6 ~ 3.3V
- Separated I/O power(VccQ) & Core power(Vcc)
- Three state outputs
- Byte read/write control by UB# / LB#
- Auto-TCSR for power saving
-
- Package type : 48ball-FPBGA (6.0x7.0)
-
- Operating Temperature
-
. Industrial : -40
℃
~ 85
℃
PRODUCT FAMILY
Power Dissipation
Part Number
Operating
Temp.
Power
Supply
Speed
(t
RC
)
Operating
I
CC
( Max.)
Standby
(I
SB
, Max.)
I
CC1
( f = 1MHz)
I
CC2
( f = f
max
)
AS1C1M16P-70BIN
-40
o
C to 85
o
C
2.6 ~ 3.3V
70ns
120uA
5mA
25mA
FUNCTION BLOCK DIAGRAM
ZZ#
CS#
UB#
LB#
WE#
OE#
Self-Refresh
CONTROL
CONTROL
LOGIC
COLUMN SELECT
ROW SELECT
A0~A19
ADDRESS
DECODER
Memory Array
1M X 16
DQ0~
DQ15
Din/Dout BUFFER
I/O CIRCUIT
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Rev.1.0 Aug. 2018
AS1C1M16P-70BIN
PIN DESCRIPTION(48-FPBGA-6.00 x 7.00)
1
A
LB#
2
OE#
3
A0
4
A1
5
A2
6
ZZ#
B
DQ8
UB#
A3
A4
CS#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
D
VSSQ
DQ11
A17
A7
DQ3
VCC
E
VCCQ
DQ12
DNU
A16
DQ4
VSS
F
DQ14
DQ13
A14
A15
DQ5
DQ6
G
H
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
NC
TOP VIEW (Ball Down)
Name
CS#
OE#
WE#
ZZ#
DQ
0-15
A
0-19
DNU
Function
Chip select input
Output enable input
Write enable input
Name
LB#
UB#
VCC
Function
Lower byte (DQ
0~7
)
Upper byte (DQ
8~15
)
Power supply
I/O power supply
Ground
No connection
Connected with VCC in this version VCCQ
Data in-out
Address inputs
Do not use
VSS(Q)
NC
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Rev.1.0 Aug. 2018
AS1C1M16P-70BIN
ABSOLUTE MAXIMUM RATINGS
1)
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage Temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
P
D
T
STG
T
A
Ratings
-0.2 to V
CCQ
+0.3V
-0.2
2)
to V
CCQ
+0.3V
1.0
-65 to 150
-40 to 85
Unit
V
V
W
o
o
C
C
1. Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device.
Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. Undershoot at power-off : -1.0V in case of pulse width < 20ns
FUNCTIONAL DESCRIPTION
CS#
H
L
L
L
L
L
L
L
L
OE#
X
H
H
L
L
L
X
X
X
WE#
X
H
H
H
H
H
L
L
L
LB#
X
L
X
L
H
L
L
H
L
UB#
X
X
L
H
L
L
H
L
L
DQ
0~7
High-Z
High-Z
High-Z
Data Out
High-Z
Data Out
Data In
High-Z
Data In
DQ
8~15
High-Z
High-Z
High-Z
High-Z
Data Out
Data Out
High-Z
Data In
Data In
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Stand by
Active
Active
Active
Active
Active
Active
Active
Active
Note:
1. X means don’t care. (Must be low or high state)
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Rev.1.0 Aug. 2018
AS1C1M16P-70BIN
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
Symbol
V
CC
V
CCQ
V
SS
, V
SSQ
V
IH
V
IL
Min
2.6
2.6
0
0.8 * V
CCQ
-0.2
3)
Typ
3.0
3.0
0
-
-
Max
3.3
3.3
0
V
CCQ
+ 0.2
2)
0.2 * V
CCQ
Unit
V
V
V
V
V
T
A
= -30 to 85
o
C, otherwise specified
Overshoot: V
CC
+1.0 V in case of pulse width < 20ns
Undershoot: -1.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
8
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby current (CMOS)
V
OL
V
OH
I
SB
Test Conditions
V
IN
=V
SS
to V
CCQ
, V
CC=
V
CCmax
CS#=V
IH
, OE#=V
IH
or WE#=V
IL
,
V
IO
=V
SS
to V
CCQ
, V
CC=
V
CCmax
Cycle time = 1us, I
IO
=0mA, 100% duty,
CS#<0.2V,
V
IN
<0.2V or V
IN
>V
CCQ
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS#=V
IL
, V
IN
=V
IL
or V
IH
I
OL
= 0.5mA, V
CC=
V
CCmin
I
OH
= -0.5mA, V
CC=
V
CCmin
(Typ. condition : V
CC
=3.0V @ 25
o
C)
CS#>V
CCQ
-0.2V, Other inputs = 0 ~ V
CCQ
Min
-1
-1
Typ
-
-
Max
1
1
Unit
uA
uA
Average operating current
-
-
5
mA
-
-
0.8*V
CCQ
-
-
-
-
25
0.2*V
CCQ
mA
V
V
uA
-
120
(Max. condition : V
CC
=3.3V @ 85
o
C)
-
1. Maximum Icc specifications are tested with V
CC
= V
CCmax.
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Rev.1.0 Aug. 2018
