描述 |
MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms |
MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms |
MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms |
是否Rohs认证 |
符合 |
符合 |
符合 |
包装说明 |
ROHS COMPLIANT, PLASTIC, D2PAK-3 |
ROHS COMPLIANT, PLASTIC, D2PAK-3 |
ROHS COMPLIANT, PLASTIC, D2PAK-3 |
Reach Compliance Code |
compliant |
compliant |
compliant |
ECCN代码 |
EAR99 |
EAR99 |
EAR99 |
其他特性 |
AVALANCHE RATED, HIGH RELIABILITY |
AVALANCHE RATED, HIGH RELIABILITY |
AVALANCHE RATED, HIGH RELIABILITY |
雪崩能效等级(Eas) |
519 mJ |
519 mJ |
519 mJ |
外壳连接 |
DRAIN |
DRAIN |
DRAIN |
配置 |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 |
40 V |
40 V |
40 V |
最大漏极电流 (Abs) (ID) |
75 A |
75 A |
75 A |
最大漏极电流 (ID) |
75 A |
75 A |
75 A |
最大漏源导通电阻 |
0.004 Ω |
0.004 Ω |
0.004 Ω |
FET 技术 |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 |
TO-263AB |
TO-263AB |
TO-263AB |
JESD-30 代码 |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSSO-G2 |
JESD-609代码 |
e3 |
e3 |
e3 |
湿度敏感等级 |
1 |
1 |
1 |
元件数量 |
1 |
1 |
1 |
端子数量 |
2 |
2 |
2 |
工作模式 |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
最高工作温度 |
175 °C |
175 °C |
175 °C |
封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
封装形状 |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
封装形式 |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
峰值回流温度(摄氏度) |
260 |
260 |
260 |
极性/信道类型 |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
最大功率耗散 (Abs) |
200 W |
200 W |
200 W |
最大脉冲漏极电流 (IDM) |
650 A |
650 A |
650 A |
认证状态 |
Not Qualified |
Not Qualified |
Not Qualified |
表面贴装 |
YES |
YES |
YES |
端子面层 |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Matte Tin (Sn) - with Nickel (Ni) barrier |
MATTE TIN OVER NICKEL |
端子形式 |
GULL WING |
GULL WING |
GULL WING |
端子位置 |
SINGLE |
SINGLE |
SINGLE |
处于峰值回流温度下的最长时间 |
30 |
30 |
30 |
晶体管应用 |
SWITCHING |
SWITCHING |
SWITCHING |
晶体管元件材料 |
SILICON |
SILICON |
SILICON |
厂商名称 |
Infineon(英飞凌) |
- |
Infineon(英飞凌) |
Factory Lead Time |
16 weeks |
16 weeks |
- |