PD - 96421
AUTOMOTIVE GRADE
AUIRF7799L2TR
AUIRF7799L2TR1
max.
I
D (Silicon Limited)
Q
g
S
S
S
S
D
•
Advanced Process Technology
•
Optimized for Automotive Motor Drive, DC-DC and
•
•
•
•
•
•
•
•
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
Automotive DirectFET
®
Power MOSFET
V
(BR)DSS
250V
R
DS(on)
typ.
32mΩ
38mΩ
35A
110nC
D
G
S
S
S
S
Applicable DirectFET® Outline and Substrate Outline
SB
SC
M2
M4
L8
DirectFET
®
ISOMETRIC
L4
L6
L8
Description
The AUIRF7799L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.
The DirectFET®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7799L2TR to offer substantial system level savings and perfor-
mance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This
MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET
are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly
efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
P
D
@T
A
= 25°C
E
AS
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
250
±30
35
25
6.6
375
140
125
63
4.3
325
Units
V
f
f
e
f
f
g
f
A
W
mJ
A
mJ
°C
Ãg
h
g
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJ-can
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
e
j
k
fl
Parameter
Typ.
–––
12.5
20
–––
–––
0.83
Max.
35
–––
–––
1.2
0.5
Units
°C/W
f
W/°C
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
12/13/11
AUIRF7799L2TR/TR1
Static Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
250
–––
–––
3.0
–––
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.12
32
4.0
-13
–––
–––
–––
–––
–––
110
26
5.7
39
39
45
33
0.73
36.3
33.5
73.9
26.6
6714
606
157
5063
217
–––
–––
38
5.0
–––
–––
20
1
100
-100
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 2mA
mΩ V
GS
= 10V, I
D
= 21A
V
DS
= V
GS
, I
D
= 250μA
V
V
i
mV/°C
V
DS
= 50V, I
D
= 21A
S
μA
V
DS
= 250V, V
GS
= 0V
1mA V
DS
= 250V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
Dynamic Characteristics @ T
J
= 25°C (unless otherwise stated)
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
V
DS
= 125V
V
GS
= 10V
I
D
= 21A
See Fig. 9
V
DS
= 16V, V
GS
= 0V
V
DD
= 125V, V
GS
= 10V
I
D
= 21A
R
G
=6.2Ω
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 80V, f=1.0MHz
nC
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ãi
ns
Diode Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
132
1412
35
A
140
1.3
198
2118
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
T
J
= 25°C, I
F
= 21A, V
DD
= 50V
di/dt = 100A/μs
Ãg
i
i
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with small
clip heatsink (still air)
Notes
through
are on page 10
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
2
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AUIRF7799L2TR/TR1
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
LARGE-CAN
MSL1
Class M4 (+/- 800V)
(per AEC-Q101-002)
Class H2 (+/- 4000V)
(per AEC-Q101-001)
N/A
(per AEC-Q101-005)
Yes
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
†
††
†††
†††
ESD
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRF7799L2TR/TR1
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
5.0V
10
10
1
5.0V
Tj
≤
60μs PULSE WIDTH
= 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
Tj
≤
60μs PULSE WIDTH
= 175°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
RDS(on) , Drain-to -Source On Resistance (m
Ω)
Fig 2.
Typical Output Characteristics
60
200
180
160
140
120
100
80
60
40
20
4
8
12
16
20
TJ = 125°C
T J = 25°C
ID = 21A
55
Typical RDS(on) (mW)
Ω
50
45
40
35
30
25
0
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
T J = 25°C
20
40
60
80
100
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 3.
Typical On-Resistance vs. Gate Voltage
1000
Fig 4.
Typical On-Resistance vs. Drain Current
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VDS = 50V
≤60μs
PULSE WIDTH
100
T J = 175°C
TJ = 25°C
TJ = -40°C
10
2.5
2.0
1.5
1.0
0.5
0.0
ID = 21A
VGS = 10V
1
0.1
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Normalized On-Resistance vs. Temperature
4
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AUIRF7799L2TR/TR1
6.0
VGS(th), Gate Threshold Voltage (V)
1000
5.0
ISD, Reverse Drain Current (A)
100
TJ = 175°C
TJ = 25°C
TJ = -40°C
4.0
10
3.0
ID = 250μA
2.0
ID = 1.0mA
ID = 1.0A
1
VGS = 0V
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, Source-to-Drain Voltage (V)
1
Fig 7.
Typical Threshold Voltage vs.
Junction Temperature
200
Gfs, Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
160
C, Capacitance (pF)
T J = 25°C
120
T J = 175°C
80
10000
Ciss
1000
Coss
Crss
40
V DS = 50V
20μs PULSE WIDTH
100
0
0
20
40
60
80
100
120
ID,Drain-to-Source Current (A)
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Forward Transconductance vs. Drain Current
14.0
Fig 10.
Typical Capacitance vs.Drain-to-Source Voltage
40
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
ID= 21A
VDS= 200V
VDS= 125V
VDS= 50V
ID, Drain Current (A)
30
20
10
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
T C , Case Temperature (°C)
Fig.11
Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12.
Maximum Drain Current vs. Case Temperature
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5
