BAT54, BAT54A, BAT54C, BAT54S
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
BAT54
3
BAT54A
3
Top View
1
2
1
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
BAT54C
3
BAT54S
3
Top View
1
2
1
2
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
PARTS TABLE
PART
BAT54
BAT54A
BAT54C
BAT54S
ORDERING CODE
BAT54-E3-08 or BAT54-E3-18
BAT54-HE3-08 or BAT54-HE3-18
BAT54A-E3-08 or BAT54A-E3-18
BAT54A-HE3-08 or BAT54A-HE3-18
BAT54C-E3-08 or BAT54C-E3-18
BAT54C-HE3-08 or BAT54C-HE3-18
BAT54S-E3-08 or BAT54S-E3-18
BAT54S-HE3-08 or BAT54S-HE3-18
CIRCUIT CONFIGURATION
Single
Common anode
Common cathode
Dual serial
TYPE MARKING
L4
L42
Tape and reel
L43
L44
REMARKS
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
(1)
Repetitive peak forward current
(1)
Surge forward current
(1)
Power dissipation
TEST CONDITION
SYMBOL
V
RRM
I
F
I
FRM
I
FSM
P
tot
VALUE
30
200
300
600
230
UNIT
V
mA
mA
mA
mW
t
p
< 1 s
Note
(1)
Device on fiberglass substrate, see layout on next page
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
Device on fiberglass substrate,
see layout on next page
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
430
125
-65 to +150
-55 to +125
UNIT
K/W
°C
°C
°C
Rev. 2.0, 02-Jun-17
Document Number: 85508
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAT54, BAT54A, BAT54C, BAT54S
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
R
= 100 μA (pulsed)
SYMBOL
V
(BR)
I
R
V
F
V
F
V
F
V
F
V
F
C
D
t
rr
MIN.
30
2
240
320
400
500
800
10
5
TYP.
MAX.
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reserve breakdown voltage
Leakage current
Pulsed test t
p
< 300 μs,
δ
<2 % at V
R
= 25 V
I
F
= 0.1 mA, t
p
< 300 μs,
δ
< 2 %
I
F
= 1 mA, t
p
< 300 μs,
δ
< 2 %
Forward voltage
I
F
= 10 mA, t
p
< 300 μs,
δ
< 2 %
I
F
= 30 mA, t
p
< 300 μs,
δ
< 2 %
I
F
= 100 mA, t
p
< 300 μs,
δ
< 2 %
Diode capacitance
Reserve recovery time
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA to I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
Ω
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglas 15 mm (0.059")
Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
I
F
- Forward Current (mA)
100
10
1
0.1
0.01
0
18867
14
T
j
= 125 °C
- 40 °C
C
D
- Typical Capacitance (pF)
12
10
8
6
4
2
0
0.2
1.2
0.4 0.6 0.8
1
V
F
- Forward
Voltage
(V)
1.4
18868
25 °C
0
4
12
16
20
24
8
V
R
- Reverse
Voltage
(V)
28
Fig. 1 -
Typical Forward Voltage Forward Current vs.
Various Temperatures
Fig. 2 - Diode Capacitance vs. Reverse Voltage V
R
Rev. 2.0, 02-Jun-17
Document Number: 85508
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAT54, BAT54A, BAT54C, BAT54S
www.vishay.com
Vishay Semiconductors
1000
T
j
= 125 °C
I
R
- Reverse Current (µA)
100
10
1
25 °C
0.1
0.01
0
18869
100 °C
75 °C
50 °C
5
10
15
20
25
V
R
- Reverse
Voltage
(V)
30
Fig. 3 -
Typical Variation of Reverse Current
vs. Various Temperatures
PACKAGE DIMENSIONS
in millimeters (inches):
SOT-23
1.15 (0.045)
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
1.43 (0.056)
1.20 (0.047)
0.35 (0.014)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
0.175 (0.007)
0.098 (0.004)
0.2 (0.008)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.3 (0.012)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 2.0, 02-Jun-17
Document Number: 85508
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2 (0.079)
0.95 (0.037)
0° t
0.5 (0.020)
o8
°
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www.vishay.com
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Revision: 08-Feb-17
1
Document Number: 91000