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BC213B

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

器件类别:分立半导体    晶体管   

厂商名称:CDIL[Continental Device India Pvt. Ltd.]

器件标准:

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
符合
厂商名称
CDIL[Continental Device India Pvt. Ltd.]
包装说明
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
6 pF
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
200
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
0.35 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
360 MHz
VCEsat-Max
0.6 V
Base Number Matches
1
文档预览
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
Silicon Small Signal General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
BC212
50
60
BC213
30
45
5
100
350
2.8
1
8
-55 to +150
BC214
30
45
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
357
125
ºC/W
ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 4
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
I
C
=2mA,I
B
=0
V
CEO
Collector Emitter Voltage
BC212
50
BC213, BC214
30
V
CBO
I
C
=10µA.I
E
=0
Collector Base Voltage
BC212
60
BC213, BC214
45
V
EBO
I
E
=10µA, I
C
=0
Emitter Base Voltage
5
V
CB
=30V,I
E
=0
I
CBO
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
BC212, BC213
BC214
BC212
BC213
BC214
BC212, BC214
BC213
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
I
EBO
h
FE
V
EB
=4V, I
C
=0
I
C
=10µA,V
CE
=5V
I
C
=2mA,V
CE
=5V
40
100
60
80
140
TYP
MAX
UNITS
V
V
V
V
V
15
15
nA
nA
600
120
140
0.10
0.25
1.00
0.62
0.6
1.4
0.72
I
C
=100mA,V
CE
=5V*
V
CE(sat)
V
BE(sat)
V
BE(on)
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA*
I
C
=100mA,I
B
=5mA*
I
C
=2mA,V
CE
=5V
V
V
V
V
0.6
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DYNAMICS CHARACTERISTICS
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V
BC212
BC213
f=50MHz
BC214
C
ob
V
CB
=10V, I
E
=0
Output Capacitance
Noise Figure
BC212, BC213
NF
I
C
=200µA, V
CE
=5V
R
S
=2KW f=1KHz
f=200H
Z
BC214
NF
I
C
=200µA, V
CE
=5V
R
S
=2KW f=30Hz
to 15KHz
Small Signal Current Gain
| h
fe
|
I
C
=2mA, V
CE
=5V
BC212
f=1KH
Z
BC213
BC214
A
B
C
*Pulse Condition: Pulse Width 300us, Duty Cycle 2%.
Continental Device India Limited
Data Sheet
MIN
TYP
MAX
UNITS
280
360
320
6
10
MHz
MHz
MHz
pF
dB
2
dB
60
80
140
100
200
350
300
400
600
Page 2 of 4
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
TO-92 Plastic Package
TO-92 Transistors on Tape and Ammo Pack
Dimension With 'L'
B
Uncontrolled
Ammo Pack Style
MECHANICAL DATA
T
P
h
A
A1
(p)
Adhesive Tape on Top Side
D
FEE
Carrier
Strip
183
mm
h
LABEL
FLAT SIDE
A
H1
H0
L
W2
Wo
W1
W
L
Solderability Ensured
t1
t
F1
F
P2
Po
F2
Do
331
mm
42
mm
Beyond 'L'
K
1
2
3
D
G
A A
Flat Side of Transistor and
Adhesive Tape Visible
2000 pcs./Ammo Pack
All dimensions in mm unless specified otherwise
D
3
E
2
1
ITEM
BODY WIDTH
BODY HEIGHT
BODY THICKNESS
PITCH OF COMPONENT
FEED HOLE PITCH
FEED HOLE CENTRE TO
COMPONENT CENTRE
DISTANCE BETWEEN OUTER
LEADS
COMPONENT ALIGNMENT
TAPE WIDTH
HOLD-DOWN TAPE WIDTH
HOLE POSITION
HOLD-DOWN TAPE POSITION
LEAD WIRE CLINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
TOTAL TAPE THICKNESS
LEAD - TO - LEAD DISTANCEF1,
CLINCH HEIGHT
PULL - OUT FORCE
SYMBOL
A1
A
T
P
Po
P2
F
h
W
Wo
W1
W2
Ho
H1
L
Do
t
F2
H2
(P)
SEC AA
DIM
MIN.
4.32
4.45
3.18
0.41
MAX.
5.33
5.20
4.19
0.55
F
F
3 2 1
A
B
C
D
E
F
G
H
K
L
PIN CONFIGURATION
1. COLLECTOR
2. BASE
3. EMITTER
0.35
0.50
5 DEG
1.14
1.40
1.14
1.53
12.70
1.982
2.082
REMARKS
MIN. NOM. MAX. TOL .
4.0
4.8
5.2
4.8
4.2
3.9
12.7
±1
12.7
±0.3 CUMULATIVE PITCH
ERROR 1.0 mm/20
PITCH
6.35
±0.4 TO BE MEASURED AT
BOTTOM OF CLINCH
+0.6
5.08
-0.2
0
1
AT TOP OF BODY
18
±0.5
6
±0.2
9
+0.7
-0.5
0.5
±0.2
16
±0.5
23.25
11.0
4
±0.2
1.2
t1 0.3 - 0.6
2.54
+0.4
-0.1
3
6N
SPECIFICATION
H
C
All diminsions in mm.
NOTES
1. MAXIMUM ALIGNMENT DEVIATION BETWEEN LEADS NOT TO BE GREATER THAN 0.2 mm.
2. MAXIMUM NON-CUMULATIVE VARIATION BETWEEN TAPE FEED HOLES SHALL NOT EXCEED 1 mm IN 20
PITCHES.
3. HOLDDOWN TAPE NOT TO EXCEED BEYOND THE EDGE(S) OF CARRIER TAPE AND THERE SHALL BE NO
EXPOSURE OF ADHESIVE.
4. NO MORE THAN 3 CONSECUTIVE MISSING COMPONENTS ARE PERMITTED.
5. A TAPE TRAILER, HAVING AT LEAST THREE FEED HOLES ARE REQUIRED AFTER THE LAST COMPONENT.
6. SPLICES SHALL NOT INTERFERE WITH THE SPROCKET FEED HOLES.
Packing Detail
PACKAGE
TO-92 Bulk
TO-92 T&A
STANDARD PACK
Details
Net Weight/Qty
1K/polybag
200 gm/1K pcs
2K/ammo box
645 gm/2K pcs
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
5K
12.5" x 8" x 1.8"
2K
OUTER CARTON BOX
Size
Qty
Gr Wt
17" x 15" x 13.5"
80K
23 kgs
17" x 15" x 13.5"
32K
12.5 kgs
Continental Device India Limited
Data Sheet
Page 3 of 4
Notes
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies
or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any
CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for
use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete
Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do
so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
www.cdil.com
e-mail sales@cdil.com
Continental Device India Limited
Data Sheet
Page 4 of 4
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参数对比
与BC213B相近的元器件有:BC214B、BC213A。描述及对比如下:
型号 BC213B BC214B BC213A
描述 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
是否无铅 含铅 含铅 含铅
是否Rohs认证 符合 符合 符合
厂商名称 CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A
基于收集器的最大容量 6 pF 6 pF 6 pF
集电极-发射极最大电压 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 200 200 100
JEDEC-95代码 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
元件数量 1 1 1
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP
最大功率耗散 (Abs) 0.35 W 0.35 W 0.35 W
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 360 MHz 320 MHz 360 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V
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