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BC309BRLRF

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

器件类别:分立半导体    晶体管   

厂商名称:Motorola ( NXP )

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
包装说明
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
6 pF
集电极-发射极最大电压
25 V
配置
SINGLE
最小直流电流增益 (hFE)
200
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
PNP
功耗环境最大值
1 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
360 MHz
VCEsat-Max
0.6 V
Base Number Matches
1
参数对比
与BC309BRLRF相近的元器件有:BC309BRL、BC309BRLRB、BC309BRLRE、BC309BRL1、BC309BZL1、BC309BRLRA、BC309BRLRP。描述及对比如下:
型号 BC309BRLRF BC309BRL BC309BRLRB BC309BRLRE BC309BRL1 BC309BZL1 BC309BRLRA BC309BRLRP
描述 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
基于收集器的最大容量 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF
集电极-发射极最大电压 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 200 200 200 200 200 200 200 200
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP
功耗环境最大值 1 W 1 W 1 W 1 W 1 W 1 W 1 W 1 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 360 MHz 360 MHz 360 MHz 360 MHz 360 MHz 360 MHz 360 MHz 360 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V 0.6 V 0.6 V 0.6 V 0.6 V 0.6 V
厂商名称 - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) - - Motorola ( NXP ) Motorola ( NXP )
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L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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