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BC337-40T/R

TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal

器件类别:分立半导体    晶体管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-W3
针数
3
Reach Compliance Code
compliant
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
250
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-W3
JESD-609代码
e3
湿度敏感等级
NOT APPLICABLE
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
0.625 W
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
VCEsat-Max
0.7 V
Base Number Matches
1
文档预览
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1.
Product overview
Package
NXP
BC817
BC817W
BC337
[1]
[1]
Type number
PNP complement
JEITA
-
SC-70
SC-43A
BC807
BC807W
BC327
SOT23
SOT323
SOT54 (TO-92)
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
DC current gain
BC817; BC817W; BC337
BC817-16; BC817-16W; BC337-16
BC817-25; BC817-25W; BC337-25
BC817-40; BC817-40W; BC337-40
[1]
Pulse test: t
p
300
μs; δ ≤
0.02.
Conditions
open base;
I
C
= 10 mA
Min
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
45
500
1
-
600
250
400
600
Unit
V
mA
A
I
C
= 100 mA;
V
CE
= 1 V
[1]
-
100
100
160
250
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pin
SOT23
1
2
3
base
emitter
collector
1
2
2
sym021
Pinning
Description
Simplified outline
Symbol
3
1
3
SOT323
1
2
3
base
emitter
collector
3
1
2
sym021
3
1
2
sot323_so
SOT54
1
2
3
emitter
base
collector
1
2
3
001aab347
3
2
1
sym026
SOT54A
1
2
3
emitter
base
collector
1
2
3
001aab348
3
2
1
sym026
SOT54 variant
1
2
3
emitter
base
collector
1
2
3
001aab447
3
2
1
sym026
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
2 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Package
Name
BC817
BC817W
BC337
[2]
[1]
[2]
Type number
[1]
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT23
SOT323
-
SC-70
SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5.
BC817
BC817-16
BC817-25
BC817-40
BC817W
BC817-16W
BC817-25W
BC817-40W
BC337
BC337-16
BC337-25
BC337-40
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
6D*
6A*
6B*
6C*
6D*
6A*
6B*
6C*
C337
C33716
C33725
C33740
Type number
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
3 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
BC817
BC817W
BC337
T
stg
T
j
T
amb
[1]
[2]
Conditions
open emitter
open base;
I
C
= 10 mA
open collector
Min
-
-
-
-
-
-
Max
50
45
5
500
1
200
250
200
625
+150
150
+150
Unit
V
V
V
mA
A
mA
mW
mW
mW
°C
°C
°C
T
amb
25
°C
T
amb
25
°C
T
amb
25
°C
[1][2]
[1][2]
[1][2]
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BC817
BC817W
BC337
[1]
[2]
Conditions
Min
Typ
Max
Unit
T
amb
25
°C
T
amb
25
°C
T
amb
25
°C
[1][2]
[1][2]
[1][2]
-
-
-
-
-
-
500
625
200
K/W
K/W
K/W
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
4 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off current
Conditions
I
E
= 0 A; V
CB
= 20 V
I
E
= 0 A; V
CB
= 20 V;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC817; BC817W; BC337
BC817-16; BC817-16W;
BC337-16
BC817-25; BC817-25W;
BC337-25
BC817-40; BC817-40W;
BC337-40
h
FE
V
CEsat
V
BE
C
c
f
T
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
Pulse test: t
p
300
μs; δ ≤
0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
Min
-
-
-
[1]
Typ
-
-
-
-
-
-
-
-
-
-
3
-
Max
100
5
100
600
250
400
600
-
700
1.2
-
-
Unit
nA
μA
nA
I
C
= 0 A; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V
100
100
160
250
I
C
= 500 mA; V
CE
= 1 V
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 1 V
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
[1]
[1]
40
-
-
-
100
mV
V
pF
MHz
[2]
[1]
[2]
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
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参数对比
与BC337-40T/R相近的元器件有:BC817T/R、BC817-25WT/R、BC337-25T/R、BC817-40WT/R、BC817-25T/R、BC817-40T/R、BC817WT/R、BC337T/R。描述及对比如下:
型号 BC337-40T/R BC817T/R BC817-25WT/R BC337-25T/R BC817-40WT/R BC817-25T/R BC817-40T/R BC817WT/R BC337T/R
描述 TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
零件包装代码 TO-92 SOT-23 SC-70 TO-92 SC-70 SOT-23 SOT-23 SC-70 TO-92
包装说明 CYLINDRICAL, O-PBCY-W3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-W3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3 PLASTIC, SC-70, 3 PIN PLASTIC, SC-43A, 3 PIN
针数 3 3 3 3 3 3 3 3 3
Reach Compliance Code compliant unknown unknown compliant unknown unknown unknown unknown compli
最大集电极电流 (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
集电极-发射极最大电压 45 V 45 V 45 V 45 V 45 V 45 V 45 V 45 V 45 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 250 100 160 160 250 160 250 100 100
JESD-30 代码 O-PBCY-W3 R-PDSO-G3 R-PDSO-G3 O-PBCY-W3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 O-PBCY-W3
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e3
元件数量 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR ROUND
封装形式 CYLINDRICAL SMALL OUTLINE SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED 260 260 NOT SPECIFIED 260 260 260 260 NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO YES YES NO YES YES YES YES NO
端子面层 TIN TIN TIN TIN TIN Matte Tin (Sn) Tin (Sn) Matte Tin (Sn) TIN
端子形式 WIRE GULL WING GULL WING WIRE GULL WING GULL WING GULL WING GULL WING WIRE
端子位置 BOTTOM DUAL DUAL BOTTOM DUAL DUAL DUAL DUAL BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED 40 40 NOT SPECIFIED 40 40 40 40 NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V
JEDEC-95代码 TO-92 TO-236AB - TO-92 - TO-236AB TO-236AB - TO-92
最大功率耗散 (Abs) 0.625 W - - 0.625 W - 0.25 W 0.25 W - 0.625 W
厂商名称 - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
ECCN代码 - EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 -
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