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BC33716

Bipolar Transistors - BJT NPN 45V 800mA HFE/250

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
制造商包装代码
3LD, TO-92, MOLDED, STD STRAIGHT LD (NO EOL CODE)
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
1 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT APPLICABLE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT APPLICABLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
Base Number Matches
1
文档预览
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device numbers. The most current and up-to-date ordering information can be found at
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Please
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BC337 / BC338 — NPN Epitaxial Silicon Transistor
September 2015
BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC327 / BC328
TO-92
12
1
1. Collector
2. Base
3. Emitter
3
3
2
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC33716BU
BC33716TA
BC33716TFR
BC33725BU
BC33725TA
BC33725TAR
BC33725TF
BC33725TFR
BC33740BU
BC33740TA
BC33825TA
Top Mark
BC33716
BC33716
BC33716
BC33725
BC33725
BC33725
BC33725
BC33725
BC33740
BC33740
BC33825
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Bulk
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CES
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
Parameter
BC337
BC338
BC337
BC338
Value
50
30
45
25
5
800
150
-55 to 150
Unit
V
V
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
www.fairchildsemi.com
BC337 / BC338 — NPN Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above 25°C
Parameter
Value
625
5.0
200
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
BC337
BC338
BC337
BC338
Conditions
I
C
= 10 mA, I
B
= 0
I
C
= 0.1 mA, V
BE
= 0
I
E
= 0.1 mA, I
C
= 0
Min.
45
25
50
30
5
Typ.
Max.
Unit
V
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
BC337 V
CE
= 45 V, I
B
= 0
BC338 V
CE
= 25 V, I
B
= 0
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 300 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 1 V, I
C
= 300 mA
V
CE
= 5 V, I
C
= 10 mA,
f = 50 MHz
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
100
60
2
2
100
100
630
0.7
1.2
nA
V
V
MHz
pF
100
12
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60 ~
25
160 ~ 400
100 ~
40
250 ~ 630
170 ~
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
www.fairchildsemi.com
2
BC337 / BC338 — NPN Epitaxial Silicon Transistor
Physical Dimensions
Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
www.fairchildsemi.com
3
BC337 / BC338 — NPN Epitaxial Silicon Transistor
Physical Dimensions
(Continued)
Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
www.fairchildsemi.com
4
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参数对比
与BC33716相近的元器件有:BC33740BU、BC33725_J35Z、BC33725TF、BC33725BU、BC337A、BC33716_J35Z、BC33725、BC337ABU、BC33716TFR。描述及对比如下:
型号 BC33716 BC33740BU BC33725_J35Z BC33725TF BC33725BU BC337A BC33716_J35Z BC33725 BC337ABU BC33716TFR
描述 Bipolar Transistors - BJT NPN 45V 800mA HFE/250 Real Time Clock I2C GP RTCC 64B SRAM Bipolar Transistors - BJT NPN GEN PURP XTOR MOSFET N-Chan 100V 28 Amp Non-Isolated DC/DC Converters 7.5W 24V 5Vout 1.5A Horizontal Mount Bipolar Transistors - BJT NPN 60V 500mA HFE/4 Bipolar Transistors - BJT NPN GEN PURP XTOR Bipolar Transistors - BJT NPN 45V 800mA HFE/4 Bipolar Transistors - BJT NPN Si Transistor Epitaxial ESD Suppressors / TVS Diodes SOT-23 7V 600W Low Capacitance
Brand Name Fairchild Semiconductor Fairchild Semiconductor - Fairchild Semiconductor Fairchild Semiconductor - - Fairchild Semiconductor - Fairchild Semiconductor
是否无铅 不含铅 不含铅 - 不含铅 不含铅 - - 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 - 符合 符合 符合 - 符合 符合 符合
零件包装代码 TO-92 TO-92 - TO-92 TO-92 TO-92 - TO-92 TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 - CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 - CYLINDRICAL, O-PBCY-T3 LEAD FREE, TO-92, 3 PIN CYLINDRICAL, O-PBCY-T3
针数 3 3 - 3 3 3 - 3 3 3
制造商包装代码 3LD, TO-92, MOLDED, STD STRAIGHT LD (NO EOL CODE) 3LD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) - 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM 3LD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) - - 3LD, TO-92, MOLDED, STD STRAIGHT LD (NO EOL CODE) - 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM
Reach Compliance Code compliant compliant - compliant compliant unknown - compliant unknown compliant
ECCN代码 EAR99 EAR99 - EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
最大集电极电流 (IC) 1 A 0.8 A - 0.8 A 0.8 A 0.8 A - 1 A 0.8 A 0.8 A
集电极-发射极最大电压 45 V 45 V - 45 V 45 V 60 V - 45 V 45 V 45 V
配置 SINGLE SINGLE - SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 100 170 - 160 160 40 - 160 60 100
JEDEC-95代码 TO-92 TO-92 - TO-92 TO-92 TO-92 - TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-W3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609代码 e3 e3 - e3 e3 e3 - e3 e3 e3
元件数量 1 1 - 1 1 1 - 1 1 1
端子数量 3 3 - 3 3 3 - 3 3 3
最高工作温度 150 °C 150 °C - 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND - ROUND ROUND ROUND - ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT APPLICABLE NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - - NOT APPLICABLE NOT APPLICABLE NOT SPECIFIED
极性/信道类型 NPN NPN - NPN NPN NPN - NPN NPN NPN
认证状态 Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
表面贴装 NO NO - NO NO NO - NO NO NO
端子面层 Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE WIRE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM - BOTTOM BOTTOM BOTTOM - BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT APPLICABLE NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - - NOT APPLICABLE NOT APPLICABLE NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON - SILICON SILICON SILICON - SILICON SILICON SILICON
最大功率耗散 (Abs) - 0.625 W - 0.625 W 0.625 W 0.625 W - - 0.625 W 0.625 W
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