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BC548-AP

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

器件类别:分立半导体    晶体管   

厂商名称:Micro Commercial Components (MCC)

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
TO-92
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
110
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
300 MHz
Base Number Matches
1
文档预览
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC546,B
BC547,A,B,C
BC548,A,B,C
NPN Silicon
Amplifier Transistor
625mW
A
Features
Through Hole Package
150
o
C Junction Temperature
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL rating 1
Marking:Type Number
Lead Free Finish/Rohs Compliant) ("P"Suffix designates
Compliant. See ordering information)
Mechanical Data
Case: TO-92, Molded Plastic
Polarity: indicated as
below.
TO-92
E
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Symbol Value
65
V
CEO
45
30
80
V
CBO
50
30
V
EBO
6.0
I
C
P
d
P
d
R
q
JA
Unit
V
C
Collector-Base Voltage
BC546
BC547
BC548
BC546
BC547
BC548
V
V
mA
mW
mW/
o
C
W
mW/
o
C
o
D
Emitter-Base Voltage
Collector Current(DC)
Power Dissipation@T
A
=25
o
C
Power Dissipation@T
C
=25 C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
o
100
625
5.0
1.5
12
200
83.3
1
2
G
3
1-Collector
2-Base
3-Emitter
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
C/W
C/W
o
R
q
JC
o
T
j
, T
STG
-55~150
C
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
Revision:
6
1 of 5
2008/02/01
BC546
thru
BC548C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
MCC
TM
Micro Commercial Components
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc)
Emitter–Base Breakdown Voltage
(I
E
= 10
mA,
I
C
= 0)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
V
(BR)CEO
65
45
30
80
50
30
6.0
6.0
6.0
V
V
(BR)CBO
V
V
(BR)EBO
V
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
µA,
V
CE
= 5.0 V)
h
FE
BC547A/548A
BC546B/547B/548B
BC548C
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
BC547A/548A
BC546B/547B/548B
BC548C
V
CE(sat)
V
BE(sat)
V
BE(on)
0.55
0.7
0.77
---
0.3
1.0
V
V
110
110
110
110
200
420
90
150
270
180
290
520
120
180
300
450
800
800
220
450
800
V
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
Collector–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
BC546
BC547
BC548
C
obo
C
ibo
h
fe
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
NF
BC546
BC547
BC548
2.0
2.0
2.0
10
10
10
125
125
125
240
450
220
330
600
500
900
260
500
900
dB
150
150
150
300
300
300
1.7
10
4.5
pF
pF
MHz
Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2 kW,
f = 1.0 kHz,
∆f
= 200 Hz)
www.mccsemi.com
2 of 5
Revision: 6
2008/02/01
BC546
thru
BC548C
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
2.0
5.0 10
1.0
20
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
MCC
Micro Commercial Components
V
BE(on)
@ V
CE
= 10 V
TM
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 1. Normalized DC Current Gain
2.0
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
0.8
0.4
0
I
C
=
I
C
=
10 mA 20 mA
I
C
= 50 mA
I
C
= 100 mA
1.0
Figure 2. “Saturation” and “On” Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
BC547/BC548
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
3.0
C
ob
2.0
C
ib
T
A
= 25°C
400
300
200
V
CE
= 10 V
T
A
= 25°C
100
80
60
40
30
20
0.5 0.7
1.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
www.mccsemi.com
3 of 5
Revision: 6
2008/02/01
BC546 thru BC548C
BC547/BC548
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 5 V
T
A
= 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
1.0
V
BE
@ V
CE
= 5.0 V
MCC
Micro Commercial Components
TM
10 20
2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. DC Current Gain
2.0
T
A
= 25°C
1.6
20 mA
1.2
0.8
0.4
0
I
C
=
10 mA
50 mA
100 mA
200 mA
-1.0
-1.4
-1.8
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VB
for V
BE
-2.2
-2.6
-3.0
-55°C to 125°C
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
0.2
0.5
10 20
1.0 2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
BC546
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
V
CE
= 5 V
T
A
= 25°C
500
200
100
50
20
10
6.0
4.0
C
ob
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
www.mccsemi.com
Revision: 6
4 of 5
2008/02/01
MCC
Micro Commercial Components
TM
Ordering Information
Device
(Part Number)-AP
(Part Number)-BP
Packing
Ammo Packing;2Kpcs/AmmoBox
Bulk;1Kpcs/Bag
***IMPORTANT NOTICE***
Micro Commercial Components Corp
.
reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp
.
does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold
Micro Commercial Components Corp
.
and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by
Micro Commercial Components Corp
.
are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
Revision: 6
5 of 5
2008/02/01
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参数对比
与BC548-AP相近的元器件有:BC546-BP、BC548-BP、BC547-BP。描述及对比如下:
型号 BC548-AP BC546-BP BC548-BP BC547-BP
描述 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
零件包装代码 TO-92 TO-92 TO-92 TO-92
包装说明 ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
针数 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 30 V 65 V 30 V 45 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 110 110 110 110
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 1 1
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 300 MHz 300 MHz 300 MHz 300 MHz
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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