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BC858W-C

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:KEC

厂商官网:http://www.keccorp.com/

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器件参数
参数名称
属性值
厂商名称
KEC
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
420
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
最大功率耗散 (Abs)
0.1 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
150 MHz
文档预览
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
BC856W/7W/8W
EPITAXIAL PLANAR PNP TRANSISTOR
E
FEATURES
・For
Complementary With NPN Type BC846W/847W/848W.
A
J
G
M
B
M
2
1
3
D
P
MAXIMUM RATING (Ta=25℃)
C
CHARACTERISTIC
BC856W
Collector-Base Voltage
BC857W
BC858W
BC856W
Collector-Emitter
Voltage
BC857W
BC858W
BC856W
Emitter-Base Voltage
BC857W
BC858W
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
RATING
-80
UNIT
H
N
K
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
_
0.42 + 0.10
0.10 MIN
0.1 MAX
V
CBO
-50
-30
-65
V
1. EMITTER
2. BASE
3. COLLECTOR
V
CEO
-45
-30
-5
V
L
USM
V
V
EBO
-5
-5
I
C
I
E
P
C
T
j
T
stg
-100
100
100
150
-55½150
mA
mA
mW
Type Name
Marking
Lot No.
MARK SPEC
TYPE
MARK
BC856W-A
3A
BC856W-B
3B
BC857W-A
3E
BC857W-B
3F
BC857W-C
3G
BC858W-A
3J
BC858W-B
3K
BC858W-C
3L
2008. 8. 29
Revision No : 4
1/3
BC856W/7W/8W
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
BC856W
DC Current Gain (Note)
BC857W
BC858W
V
CE(sat)
1
Collector-Emitter Saturation Voltage
V
CE(sat)
2
V
BE(sat)
1
Base-Emitter Saturation Voltage
V
BE(sat)
2
Base-Emitter Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
V
BE(ON1)
V
BE(ON2)
f
T
C
ob
NF
R
g
=2kΩ, f=1kHz
I
C
=-100mA, I
B
=-5mA
V
CE
=-5V, I
C
=-2mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.2mA
-
2.0
10
dB
-
-0.6
-
-
-
-0.9
-0.65
-
150
4.5
-
-0.75
-0.82
-
-
V
V
MHz
pF
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, I
B
=-0.5mA
-
-
-0.25
-0.7
-0.65
-
V
I
C
=-10mA, I
B
=-0.5mA
h
FE
V
CE
=-5V, I
C
=-2mA
SYMBOL
I
CBO
TEST CONDITION
V
CB
=-30V, I
E
=0
MIN.
-
125
125
125
-
TYP.
-
-
-
-
-0.09
MAX.
-15
475
800
800
-0.3
V
UNIT
nA
NOTE : According to the value of h
FE
the BC856, BC857, BC858 are classified as follows.
CLASSIFICATION
BC856W
h
FE
BC857W
BC858W
A
125½250
125½250
125½250
B
220½475
220½475
220½475
C
-
420½800
420½800
2008. 8. 29
Revision No : 4
2/3
BC856W/7W/8W
I
C
- V
CE
COLLECTOR CURRENT I
C
(mA)
-50
COLLECTOR CURRENT I
C
(mA)
-40
-30
-20
-10
0
0
-4
-8
-12
-16
-20
I
B
=-400µA
I
B
=-350µA
I
B
=-300µA
I
B
=-250µA
I
B
=-200µA
I
B
=-150µA
I
B
=-100µA
I
B
=-50µA
I
C
- V
BE
-100
-50
-30
-10
-5
-3
-1
-0.5
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
=-5V
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
BASE-EMITTER VOLTAGE V
BE
(V)
h
FE
- I
C
1k
V
CE
=-5V
V
BE(sat)
, V
CE(sat)
- I
C
-10
I
C
/I
B
=20
300
SATURATION VOLTAGE
V
BE(sat)
, V
CE(sat)
(V)
DC CURRENT GAIN h
FE
500
-3
-1
V
BE(sat)
100
50
30
-0.3
-0.1
V
CE(sat)
-0.03
-0.01
-0.1
10
-0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
C
ob
- V
CB
20
CAPACITANCE C
ob
(pF)
f=1MHz
I
E
=0
10
5
3
1
-1
-3
-10
-30
-100
-200
COLLECTOR-BASE VOLTAGE V
CB
(V)
2008. 8. 29
Revision No : 4
3/3
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参数对比
与BC858W-C相近的元器件有:BC858W-A、BC858W-B、BC856W-A、BC857W-A、BC857W-B、BC856W-B、BC857W-C。描述及对比如下:
型号 BC858W-C BC858W-A BC858W-B BC856W-A BC857W-A BC857W-B BC856W-B BC857W-C
描述 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 30 V 30 V 30 V 65 V 45 V 45 V 65 V 45 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 420 125 220 125 125 220 220 420
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
厂商名称 KEC - KEC KEC KEC KEC KEC KEC
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