BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
COLLECTOR
3
3
1
2
SOT-23
MARKING DIAGRAM
3
1
BASE
2
EMITTER
1
XX = Device
Code (See
2
Table Below)
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
BC856
BC857
BC858,BC859
Symbol
VCEO
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
V
Collector-Base Voltage
VCBO
VEBO
IC
Symbol
PD
R
θ
JA
PD
R
θ
JA
TJ,Tstg
V
V
mAdc
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Emitter-Base VOltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)
(Note 1.)T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
(I
C
= -10mA)
Collector-Emitter Breakdown Voltage
(I
C
=-10 µA ,VEB=0)
Collector-Base Breakdown Voltage
(I
C
=-10 µA)
Emitter-Base Breakdown Voltage
(I
E
=-1.0 µA)
(T
A
=25 C Unless Otherwise noted)
Symbol
Characteristics
Min
Typ
Max
Unit
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)CEO
-65
-45
-30
-80
-50
-30
-80
-50
-30
-5.0
-5.0
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-15
-4.0
V
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
Collector Cutoff Current (V
CB
=-30V)
(VCB=-30V, TA=150 C)
I
CBO
nA
m
A
WEITRON
1/4
Rev A 12-Apr-05
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
(T
A
=25 C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
Electrical Characteristics
On Characteristics
DC Current Gain
(IC= -10uA, VCE=-5.0V)
Characteristics
(IC= -2.0mA,VCE=-5.0V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
hFE
-
-
-
125
220
420
-
-
-
-
-0.6
-
90
150
270
180
290
520
-
-
-0.7
-0.9
-
-
-
-
-
250
475
800
-0.3
-0.65
-
-
-0.75
-0.82
-
Collector-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter On Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
VCE(sat)
V
VBE(sat)
V
VBE(on)
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
Noise Figure
(IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k
Ω
, f=1.0kHz, BW=200Hz)
BC856, BC857, BC858 Series
BC859, Series
fT
Cobo
NF
-
-
-
-
10
4.0
100
-
-
-
-
4.5
MHz
pF
dB
Device Marking
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G
BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C
WEITRON
2/4
Rev A 12-Apr-05
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
BC857/BC858/BC859 Series
-1.0
-0.9
V, VOLTAGE (VOLTS)
TA=25 C
VBE
(sat)
@IC/BC=10
hFE,NORMALIZED DC CURRENT GAIN
2.0
1.5
1.0
0.7
0.5
VCE=10V
TA=25 C
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
VBE
(ON)
@VCE= -10V
0.3
0.2
-0.1
-0.2
-0.5 -1.0
-2.0
-5.0
-10
-20
-50
-100 -200
0
-0.1
-0.2
VCE
(sat)
@IC/BC=10
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
Firure2. "Saturation" And "On" Voltage
VCE, COLLECTOR- EMITTER VOLTAGE (V)
qVB, TEMPERATURE COEFFICIENT (mV/ C)
-2.0
TA=25 C
-1.6
1.0
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
-1.2
IC=
-10mA
IC= -20mA
-0.4
IC= -50mA
IC= -200mA
-0.8
IC= -100mA
0
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
-10
-20
-0.2
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
Figure 4. Base-Emitter Temperature Coefficient
10
Cib
7.0
C,CAPACITANCE (pF)
5.0
Cob
TA=25 C
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10V
T
A
= 25 C
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20
-30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current-Gain- Bandwidth Product
WEITRON
3/4
Rev A 12-Apr-05
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
BC856 Series
-1.0
hFE,DC CURRENT GAIN (NORMALIZED)
VCE= -5.0V
TA= 25 C
V,Voltage (Volts)
2.0
1.0
0.5
TJ=25 C
-0.8
VBE(sat)@IC/IB=10
-0.6
VBE@VCE=-5.0V
-0.4
0.2
-0.2
VCE(sat)@IC/IB=10
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
0
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100 -200
-0.1 -0.2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT(mA)
Figure 7. DC Current Gain
Figure 8. "ON" Voltage
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
qVB TEMPERATURE COEFFICIENT (mV/= C)
-1.0
-1.6
IC=
-10mA
-20mA
-50mA
-100mA
-200mA
-1.4
-1.2
-1.8
qVB for VBE
-55 C to 125 C
-0.8
-2.2
-0.4
TJ=25 C
0
-0.02
-0.05 -0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-2.6
-3.3
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
-200
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
40
TJ=25 C
20
Cib
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
500
VCE=-5.0V
C. CAPACTIANCE (pF)
200
100
50
10
8.0
6.0
4.0
Cob
20
2.0
-0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50 -100
-1.0
-10
-100
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12.Current-Gain-Bandwidth Product
WEITRON
4/4
Rev A 12-Apr-05
