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BCW60DE6327

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,

器件类别：分立半导体    晶体管   

厂商名称：Infineon(英飞凌)

厂商官网：http://www.infineon.com/

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
32 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
极性/信道类型
NPN
最大功率耗散 (Abs)
0.33 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
文档预览
BCW60, BCX70
NPN Silicon AF Transistors
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 Hz and 15 kHz
•
Complementary types: BCW61, BCX71 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
BCW60B
BCW60C
BCW60D
BCW60FF
BCX70G
BCX70H
BCX70J
BCX70K
1
Pb-containing
Marking
ABs
ACs
ADs
AFs
AGs
AHs
AJs
AKs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
package may be available upon special request
1
2007-04-20
BCW60, BCX70
Maximum Ratings
Parameter
Collector-emitter voltage
BCW60, ...60FF
BCX70
Collector-base voltage
BCW60, ...60FF
BCX70
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
T
S
≤
71 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1
For
Symbol
V
CEO
Value
32
45
Unit
V
V
CBO
32
45
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
6
100
200
200
330
150
-65 ... 150
Value
≤
240
Unit
K/W
mW
°C
mA
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-04-20
BCW60, BCX70
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BCW60, ...60FF
I
C
= 10 mA,
I
B
= 0 , BCX70
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BCW60, ...60FF
I
C
= 10 µA,
I
E
= 0 , BCX70
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 32 V,
I
E
= 0 , BCW60, ...60FF
V
CB
= 45 V,
I
E
= 0 , BCX70
V
CB
= 32 V,
I
E
= 0 ,
T
A
= 150 °C, BCW60, ...60FF
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C, BCX70
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain-
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. G
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. B/ H
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. C/ J/ FF
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. D/ K
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. D/ K
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. G
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. B/ H
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. C/ J/ FF
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. D/ K
h
FE
20
20
40
100
120
180
140
200
300
460
170
250
350
500
-
-
-
-
-
-
-
I
EBO
I
CBO
-
-
-
-
-
-
-
-
-
-
0.02
0.02
20
20
20
nA
µA
V
(BR)EBO
V
(BR)CBO
32
45
6
-
-
-
-
-
-
32
45
-
-
-
-
-
-
220
310
460
630
-
-
-
-
250
380
50
70
90
100
3
2007-04-20
BCW60, BCX70
DC Electrical Characteristics
Parameter
Characteristics
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base-emitter voltage
1)
I
C
= 10 µA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 50 mA,
V
CE
= 1 V
1
Pulse
Symbol
min.
V
CEsat
-
-
V
BEsat
-
-
V
BE(ON)
-
0.58
-
Values
typ.
max.
Unit
V
0.12
0.2
0.7
0.83
0.52
0.65
0.78
0.25
0.55
0.85
1.05
-
0.7
-
test: t < 300µs; D < 2%
4
2007-04-20
BCW60, BCX70
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J /FF
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. D/ K
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B /H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. D/ K
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. D/ K
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE = 5 V, f = 1 kHz,
h
FE
-grp. D/ K
Noise figure
I
C
= 200 µA,
V
CE = 5 V, f = 1 kHz,
D
f
= 200 Hz,
R
S
= 2 kΩ,
h
FE
-grp. B - K
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 2 kΩ,
h
FE
-grp. FF
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2 kΩ,
f
= 10...50 Hz ,
h
FE
-grp. FF
V
n
-
-
1
-
2
0.135 µV
F
-
2
-
h
22e
h
21e
-
-
-
-
200
260
330
520
-
-
-
-
µS
h
12e
-
-
-
-
1.5
2
2
3
-
-
-
-
-
h
11e
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
10
-4
kΩ
C
eb
-
9
-
f
T
C
cb
-
-
250
0.95
-
-
MHz
pF
-
-
-
-
18
24
30
50
-
-
-
-
dB
5
2007-04-20
查看更多>
参数对比
与BCW60DE6327相近的元器件有：BCX70HE6327、BCX70KE6327、BCW60CE6327、BCX70HE6433、BCX70JE6327、BCX70GE6327、BCW60FFE6327、BCW60BE6327、BCX70JE6433。描述及对比如下：
型号 BCW60DE6327 BCX70HE6327 BCX70KE6327 BCW60CE6327 BCX70HE6433 BCX70JE6327 BCX70GE6327 BCW60FFE6327 BCW60BE6327 BCX70JE6433
描述 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 32 V 45 V 45 V 32 V 45 V 45 V 45 V 32 V 32 V 45 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 100 70 100 90 70 90 50 90 70 90
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1 1 1 1 1 1
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 260 260 260 260 260 260 260 260
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) MATTE TIN MATTE TIN Matte Tin (Sn) Tin (Sn) MATTE TIN MATTE TIN Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40 40 40 40 40 40 40
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
厂商名称 Infineon(英飞凌) Infineon(英飞凌) - - - - Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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