BCW66 series
Rev. 1 — 21 April 2017
45 V, 800 mA NPN general-purpose transistor
Product data sheet
1
General description
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
PNP complements: BCW68F/G/H
2
Features and benefits
•
High current
•
AEC-Q101 qualified
3
Applications
•
General-purpose switching and amplification
4
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
BCW66F
BCW66G
BCW66H
single pulse; t
p
≤ 1 ms
V
CE
= 1 V; I
C
= 100 mA; T
amb
= 25 °C
[1]
Table 1. Quick reference data
Symbol
V
CEO
I
C
I
CM
h
FE
Conditions
open base
Min
-
-
-
100
160
250
Typ
-
-
-
-
-
-
Max
45
800
1
250
400
600
Unit
V
mA
A
[1]
pulsed: t
p
≤ 300 μs, δ ≤ 0.02
Nexperia
45 V, 800 mA NPN general-purpose transistor
BCW66 series
5
Pin
1
2
3
Pinning information
Symbol
B
E
C
Table 2. Pinning
Description
base
emitter
collector
Simplified outline
3
Graphic symbol
C
B
E
1
2
sym123
6
Ordering information
Package
Name
Description
plastic surface-mounted package; 3 leads
Table 3. Ordering information
Type number
BCW66F
BCW66G
BCW66H
Version
SOT23
TO-236AB
7
Marking
Marking code
[1]
[1]
[1]
Table 4. Marking
Type number
BCW66F
BCW66G
BCW66H
[1]
% = placeholder for manufacturing site code
EQ%
ER%
ES%
8
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
Conditions
open emitter
open base
open collector
single pulse; t
p
≤ 1 ms
Min
-
-
-
-
-
-
Max
50
45
5
800
1
100
Unit
V
V
V
mA
A
mA
BCW66x_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 21 April 2017
2 / 14
Nexperia
45 V, 800 mA NPN general-purpose transistor
Symbol
I
BM
P
tot
T
j
T
amb
T
stg
[1]
BCW66 series
Min
-
[1]
Parameter
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
single pulse; t
p
≤ 1 ms
T
amb
≤ 25 °C
Max
200
250
150
150
150
Unit
mA
mW
°C
°C
°C
-
-
-55
-65
Device mounted on an FR4 Printed-Circuit-Board (PCB), single-sided chopper, tin-plated and standard footprint.
400
P
tot
(mW)
300
aaa-026537
200
100
0
-75
-25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Figure 1. Power derating curve
9
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Table 6. Thermal characteristics
Symbol
R
th(j-a)
[1]
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCW66x_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 21 April 2017
3 / 14
Nexperia
45 V, 800 mA NPN general-purpose transistor
aaa-026538
BCW66 series
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.50
0.20
0.10
0.05
10
0.02
0.01
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Figure 2. Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10 Electrical characteristics
Table 7. Electrical characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
BCW66F/G/H
BCW66F/G/H
BCW66F/G/H
BCW66F
BCW66G
BCW66H
BCW66F/G/H
Conditions
V
CB
= 40 V; I
E
= 0 A
V
CB
= 40 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= 5 V; I
C
= 0 A
Min
-
-
-
Typ
-
-
-
Max
20
5
20
Unit
nA
μA
nA
V
CE
= 1 V; I
C
= 100 μA
V
CE
= 1 V; I
C
= 1 mA
V
CE
= 1 V; I
C
= 10 mA
V
CE
= 1 V; I
C
= 100 mA
[1]
[1]
[1]
75
75
75
100
160
250
40
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
3
-
-
-
250
400
630
-
350
450
1.25
1.25
-
-
mV
mV
V
V
MHz
pF
V
CE
= 1 V; I
C
= 500 mA
I
C
= 100 mA; I
B
= 10 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 100 mA; I
B
= 10 mA
I
C
= 500 mA; I
B
= 50 mA
V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz
[1]
[1]
[1]
[1]
[1]
V
CEsat
V
BEsat
f
T
C
c
[1]
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequency
collector capacitance
pulsed; t
p
≤ 300 μs; δ ≤ 0.02
BCW66x_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 21 April 2017
4 / 14
Nexperia
45 V, 800 mA NPN general-purpose transistor
Table 8.
400
h
FE
300
006aaa131
BCW66 series
006aaa132
600
h
FE
(1)
(1)
400
200
(2)
(2)
200
100
(3)
(3)
0
10
- 1
1
10
10
2
I
C
(mA)
10
3
0
10
- 1
1
10
10
2
I
C
(mA)
10
3
V
CE
= 1 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 3. BCW66F: DC current gain as a function of
collector current; typical values
800
h
FE
600
(1)
006aaa133
V
CE
= 1 V
(1)
amb
= 150 °C
(2)
amb
= 25 °C
(3)
amb
= -55 °C
Figure 4. BCW66G: DC current gain as a function of
collector current; typical values
10
006aaa134
V
BEsat
(V)
400
(2)
1
(1)
(2)
200
(3)
(3)
0
10
- 1
1
10
10
2
I
C
(mA)
10
3
10
- 1
10
- 1
1
10
10
2
I
C
(mA)
10
3
V
CE
= 1 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 5. BCW66H: DC current gain as a function of
collector current; typical values
I
C
/I
B
= 10
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Figure 6. BCW66F: Base-emitter saturation voltage as a
function of collector current; typical values
BCW66x_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 21 April 2017
5 / 14
