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DISCRETE SEMICONDUCTORS
DATA SHEET
BCX19
NPN general purpose transistor
Product data sheet
Supersedes data of 2000 Jul 28
2004 Jan 16
NXP Semiconductors
Product data sheet
NPN general purpose transistor
FEATURES
•
High current (500 mA)
•
Low voltage (45 V).
APPLICATIONS
•
General purpose amplification
•
Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
1
BCX19
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
MARKING
TYPE NUMBER
BCX19
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCX19
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
Fig.1
Simplified outline (SOT23) and symbol.
MARKING CODE
(1)
U1*
Top view
1
2
MAM255
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base; I
C
= 10 mA
open collector
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
45
5
500
1
200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
2004 Jan 16
2
NXP Semiconductors
Product data sheet
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 1 V; note 1
I
C
= 100 mA
I
C
= 300 mA
I
C
= 500 mA
V
CEsat
V
BE
C
c
f
T
Notes
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2. V
BE
decreases by approximately
−2
mV/°C with increasing temperature.
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
I
C
= 500 mA; I
B
= 50 mA; note 2
I
C
= 500 mA; V
CE
= 1 V; notes 1 and 2
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
70
40
−
−
−
100
−
−
−
−
−
5
−
MIN.
−
−
−
TYP.
−
−
−
PARAMETER
CONDITIONS
VALUE
500
BCX19
UNIT
K/W
thermal resistance from junction to ambient note 1
MAX.
100
5
100
600
−
−
620
1.2
−
−
UNIT
nA
μA
nA
mV
V
pF
MHz
2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN general purpose transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BCX19
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 16
4
