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BCX56

1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 80 V, NPN, 硅, 小信号晶体管

器件类别:分立半导体    晶体管   

厂商名称:Weitron Technology

厂商官网:http://weitron.com.tw/

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器件参数
参数名称
属性值
厂商名称
Weitron Technology
包装说明
SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code
unknow
ECCN代码
EAR99
最大集电极电流 (IC)
1 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
63
JESD-30 代码
R-PSSO-F3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
表面贴装
YES
端子形式
FLAT
端子位置
SINGLE
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
130 MHz
文档预览
BCX54/BCX55/BCX56
NPN Plastic-Encapsulate Transistor
P b
Lead(Pb)-Free
FEATURES
High current
Low voltage
Medium power general purposes
Driver stages of audio amplifiers.
MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD
BCX55:BE BCX55-10:BG BCX52-16:BM
BCX56:BH BCX56-10:BK BCX56-16:BL
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
Collector-Base Voltage
Parameter
BCX54
BCX55
BCX56
V
CEO
Collector-Emitter Voltage
BCX54
BCX55
BCX56
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
45
60
100
45
60
80
5
1
500
150
-65-150
V
A
mW
V
V
Units
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
I
C
=1mA,I
B
=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE
f
T
I
E
=100μA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=5mA
V
CE
=2V,I
C
=150mA
V
CE
=2V,I
C
=500mA
I
C
=-500mA,I
B
=-50mA
V
CE
=2V,I
C
=500mA
V
CE
=5V,I
C
=10mA,f=100MHz
130
40
63
25
0.5
1
V
V
MHz
250
Test
conditions
BCX54
BCX55
BC56
BCX54
BCX55
BCX56
MIN
45
60
100
45
60
80
5
0.1
0.1
V
μA
μA
V
V
TYP
MAX
UNIT
I
C
=100μA,I
E
=0
W E IT R O N
h t t p : / / w w w . w e i t r o n . c o m . tw
1/2
25-Jun-08
BCX54/BCX55/BCX56
CLASSIFICATION OF
Rank
h
FE(2)
BCX54
BCX55
BCX56
BCX54-10;
BCX55-10;
BCX56-10
63-160
BCX54-16;
BCX55-16;
BCX56-16
100-250
Range
63-250
Typical Characteristics
WEITRON
http://www.weitron.com.tw
2/2
25-Jun-08
查看更多>
参数对比
与BCX56相近的元器件有:BCX54、BCX55。描述及对比如下:
型号 BCX56 BCX54 BCX55
描述 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR RF POWER TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
厂商名称 Weitron Technology - Weitron Technology
包装说明 SMALL OUTLINE, R-PSSO-F3 - SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknow - unknow
ECCN代码 EAR99 - EAR99
最大集电极电流 (IC) 1 A - 1 A
集电极-发射极最大电压 80 V - 60 V
配置 SINGLE - SINGLE
最小直流电流增益 (hFE) 63 - 63
JESD-30 代码 R-PSSO-F3 - R-PSSO-F3
元件数量 1 - 1
端子数量 3 - 3
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE
极性/信道类型 NPN - NPN
表面贴装 YES - YES
端子形式 FLAT - FLAT
端子位置 SINGLE - SINGLE
晶体管应用 AMPLIFIER - AMPLIFIER
晶体管元件材料 SILICON - SILICON
标称过渡频率 (fT) 130 MHz - 130 MHz
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