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BCX56-16E6433

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,

器件类别：分立半导体    晶体管   

厂商名称：Infineon(英飞凌)

厂商官网：http://www.infineon.com/

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
1 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PSSO-F3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
极性/信道类型
NPN
最大功率耗散 (Abs)
1 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
FLAT
端子位置
SINGLE
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
文档预览
BCX54 ...- BCX56...
NPN Silicon AF Transistors
•
For AF driver and output stages
•
High collector current
•
Low collctor-emitter saturation voltage
•
Complementary types: BCX51...BCX53 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
2
Type
BCX54-16
BCX55
BCX55-16
BCX56
BCX56-10
BCX56-16
Marking
BD
BE
BM
BH
BK
BL
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
Package
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
1
2011-09-19
BCX54 ...- BCX56...
Maximum Ratings
Parameter
Collector-emitter voltage
BCX54
BCX55
BCX56
Collector-base voltage
BCX54
BCX55
BCX56
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
120°C
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
CBO
45
60
100
5
1
1.5
100
200
2
W
mA
A
Symbol
V
CEO
45
60
80
V
Value
Unit
-
Thermal Resistance
Parameter
Symbol
R
thJS
Value
≤
15
Junction - soldering point
1)
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-09-19
BCX54 ...- BCX56...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BCX54
I
C
= 10 mA,
I
B
= 0 , BCX55
I
C
= 10 mA,
I
B
= 0 , BCX56
Unit
V
45
60
80
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCX54
I
C
= 100 µA,
I
E
= 0 , BCX55
I
C
= 100 µA,
I
E
= 0 , BCX56
45
60
100
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
-
-
100
160
-
-
-
0.1
20
-
-
250
160
250
-
0.5
1
V
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V, BCX55/BCX56
I
C
= 150 mA,
V
CE
= 2 V, BCX55-10/BCX56-10
I
C
= 150 mA,
V
CE
= 2 V, BCX54-16...BCX56-16
I
C
= 500 mA,
V
CE
= 2 V
25
40
63
100
25
V
CEsat
V
BE(ON)
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
-
-
Base-emitter voltage-
I
C
= 500 mA,
V
CE
= 2 V
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 20 MHz
1
Pulse
f
T
-
100
-
MHz
test: t < 300µs; D < 2%
3
2011-09-19
BCX54 ...- BCX56...
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 2 V
10
3
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
4 BCX 54...56
EHP00449
10
mA
Ι
C
10
100°C
3
5
100 ˚C
25 ˚C
-50 ˚C
10
2
25°C
-50°C
10
5
2
10
5
1
10
1 -1
10
10
0
10
1
10
2
10
3
10
0
0
0.2
0.4
0.6
V
0.8
V
CE sat
Base-emitter saturation voltage
I
C
=
ƒ
(
V
BEsat
),
h
FE
= 10
10
4
mA
BCX 54...56
EHP00450
Collector current
I
C
=
ƒ
(
V
BE
)
V
CE
= 2V
10
4
mA
BCX 54...56
EHP00448
Ι
C
10
3
5
100 ˚C
25 ˚C
-50 ˚C
Ι
C
10
3
5
100 ˚C
25 ˚C
-50 ˚C
10
2
5
10
2
5
10
1
10
5
1
5
10
0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE sat
10
0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE
4
2011-09-19
BCX54 ...- BCX56...
Collector cutoff current
I
CBO
=
ƒ
(
T
A
)
V
CBO
= 30 V
10
4
nA
BCX 54...56
EHP00447
Transition frequency
f
T
=
ƒ
(
I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
MHz
BCX 54...56
EHP00445
Ι
CB0
10
5
3
max
f
T
5
10
2
5
10
1
5
10
5
10
-1
10
1
10
0
0
10
2
typ
5
0
50
100
˚C
T
A
150
5 10
1
5
10
2
mA
10
3
Ι
C
Total power dissipation
P
tot
=
ƒ
(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(
t
p
)
2.4
10
2
W
R
thJS
P
tot
1.6
10
1
1.2
0.8
10
0
0.4
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
0
15
30
45
60
75
90 105 120
°C
150
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
5
2011-09-19
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参数对比
与BCX56-16E6433相近的元器件有：BCX55E6327、BCX56-10E6327、BCX56-16E6327、BCX56E6327、BCX55-16E6433。描述及对比如下：
型号 BCX56-16E6433 BCX55E6327 BCX56-10E6327 BCX56-16E6327 BCX56E6327 BCX55-16E6433
描述 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 1 A 1 A 1 A 1 A 1 A 1 A
集电极-发射极最大电压 80 V 60 V 80 V 80 V 80 V 60 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 100 40 63 100 40 100
JESD-30 代码 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
JESD-609代码 e3 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1 1
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 260 260 260 260
极性/信道类型 NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 1 W 1 W 1 W 1 W 1 W 1 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) MATTE TIN MATTE TIN
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 40 40 40 40 40 40
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
厂商名称 Infineon(英飞凌) - Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
包装说明 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 - SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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