BF996S
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuner.
Features
D
Integrated gate protection diodes
D
Low noise figure
D
Low feedback capacitance
D
High cross modulation performance
D
Low input capacitance
D
High AGC-range
2
1
G
2
G
1
D
94 9279
13 579
3
4
12623
BF996S Marking: MH
Plastic case (SOT 143)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
S
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate 1/gate 2-source peak current
Total power dissipation
Channel temperature
Storage temperature range
T
amb
≤
60°C
Symbol
V
DS
I
D
±I
G1/G2SM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
–65 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
1 (8)
BF996S
Electrical DC Characteristics
T
amb
= 25°C
Parameters / Test Conditions
Drain-source breakdown voltage
I
D
= 10
m
A, –V
G1S
= –V
G2S
= 4 V
Gate 1-source breakdown voltage
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
Gate 2-source breakdown voltage
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
Gate 1-source leakage current
±V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2-source leakage current
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
Type
Symbol
V
(BR)DS
±V
(BR)G1SS
±V
(BR)G2SS
±I
G1SS
±I
G2SS
BF 996 S
BF 996 SA
BF 996 SB
I
DSS
I
DSS
I
DSS
–V
G1S(OFF)
–V
G2S(OFF)
4
4
9.5
Min.
20
8
8
14
14
50
50
18
10.5
18
2.5
2.0
Typ.
Max.
Unit
V
V
V
nA
nA
mA
mA
mA
V
V
Gate 1-source cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
Gate 2-source cut-off voltage
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz, T
amb
= 25°C
Parameters / Test Conditions
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
V
G1S
= 0, V
G2S
= 4 V
Feedback capacitance
Output capacitance
Power gain
g
S
= 2 mS, g
L
= 0.5 mS, f = 200 MHz
g
S
= 3.3 mS, g
L
= 1 mS, f = 800 MHz
AGC range
V
G2S
= 4 to –2 V, f = 800 MHz
Noise figure
g
S
= 2 mS, g
L
= 0.5 mS, f = 200 MHz
g
S
= 3.3 mS, g
L
= 1 mS, f = 800 MHz
Type
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
G
ps
∆G
ps
F
F
40
1.0
1.8
Min.
15
Typ.
18.5
2.2
1.1
25
10.8
25
18
2.6
Max.
Unit
mS
pF
pF
fF
pF
dB
dB
dB
dB
dB
35
1.2
2 (8)
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
BF996S
Common Source S-Parameters
V
DS
= 15 V, V
G2S
= 4 V, Z
0
= 50
W
S
11
V
DS
/V
I
D
/mA
f/MHz
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
LIN
MAG
0.99
0.98
0.95
0.92
0.89
0.86
0.83
0.80
0.78
0.75
0.72
0.70
0.68
0.99
0.98
0.95
0.92
0.88
0.85
0.82
0.79
0.76
0.73
0.71
0.68
0.66
0.99
0.98
0.94
0.91
0.87
0.84
0.81
0.78
0.75
0.72
0.69
0.67
0.65
ANG
deg
–8.5
–17.7
–24.6
–32.1
–39.2
–45.8
–52.3
–58.7
–64.7
–70.7
–76.6
–82.5
–88.6
–9.0
–18.7
–26.0
–33.7
–41.2
–48.3
–55.1
–61.6
–67.9
–74.2
–80.2
–86.4
–92.3
–9.4
–19.4
–27.1
–35.0
–42.9
–50.3
–57.2
–63.9
–70.4
–76.8
–82.9
–89.0
–95.1
1.45
1.52
1.33
1.26
1.18
1.11
1.05
0.99
0.93
0.88
0.84
0.80
0.76
1.82
1.90
1.67
1.58
1.48
1.39
1.32
1.24
1.17
1.11
1.06
1.01
0.97
2.01
2.10
1.84
1.74
1.63
1.53
1.45
1.37
1.29
1.22
1.17
1.12
1.07
LIN
MAG
S
21
ANG
deg
164.9
150.9
134.7
121.3
108.4
96.5
85.0
74.1
63.6
53.1
43.7
33.6
24.1
165.3
151.8
136.3
123.3
110.9
99.5
88.7
78.1
67.9
57.9
48.7
38.9
29.6
165.4
152.0
136.7
123.8
111.5
100.3
89.6
79.4
69.2
59.4
50.2
40.8
31.5
0.001
0.003
0.004
0.004
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.004
0.006
0.002
0.003
0.004
0.005
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.006
0.002
0.003
0.004
0.005
0.005
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.006
LIN
MAG
S
12
ANG
deg
82.2
75.6
67.7
62.8
57.8
57.3
58.9
63.3
73.1
83.5
102.1
120.4
131.7
81.9
75.0
67.2
61.8
56.3
55.8
56.7
60.7
69.9
80.0
98.9
118.2
130.5
81.4
74.6
66.4
60.8
55.1
54.4
54.9
58.5
67.3
76.7
95.2
115.3
128.7
0.99
0.98
0.97
0.95
0.93
0.92
0.90
0.88
0.86
0.85
0.83
0.82
0.80
0.99
0.98
0.96
0.95
0.93
0.91
0.90
0.88
0.86
0.84
0.83
0.81
0.80
0.98
0.97
0.96
0.94
0.92
0.91
0.89
0.87
0.86
0.84
0.83
0.81
0.79
LIN
MAG
S
22
ANG
deg
–3.4
–7.1
–9.7
–12.3
–15.1
–17.4
–19.7
–22.0
–24.3
–26.2
–28.4
–30.5
–32.7
–3.5
–7.2
–9.8
–12.6
–15.3
–17.8
–20.0
–22.4
–24.6
–26.6
–28.8
–31.0
–33.3
–3.6
–7.3
–10.0
–12.9
–15.7
–18.0
–20.4
–22.7
–25.0
–27.1
–29.4
–31.6
–33.9
5
15
10
15
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
3 (8)
BF996S
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
300
P
tot
– Total Power Dissipation ( mW )
250
I
D
– Drain Current ( mA )
200
150
100
50
0
0
96 12159
22
20
18
16
14
12
10
8
6
4
2
0
20
40
60
80
100 120 140 160
12852
5V
V
DS
= 15V
4V
3V
2V
1V
0
V
G1S
= –1V
–1
–0.5
0.0
0.5
1.0
1.5
T
amb
– Ambient Temperature (
°C
)
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
32
28
I
D
– Drain Current ( mA )
24
20
16
0
12
8
4
V
G1S
= –1V
0
0
12849
Figure 4. Drain Current vs. Gate 2 Source Voltage
4.0
V
G2S
= 4V
P
tot
=200mW
C
issg1
– Gate 1 Input Capacitance ( pF )
2V
1.5V
1V
0.5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–1
V
DS
=15V
V
G2S
=4V
f=1MHz
–0.5V
2
4
6
8
10
12
14
16
12853
–0.5
0.0
0.5
1.0
1.5
V
DS
– Drain Source Voltage ( V )
I
D
– Drain Current ( mA )
Figure 2. Drain Current vs. Drain Source Voltage
22
20
18
I
D
– Drain Current ( mA )
16
14
12
10
8
6
4
2
0
–1
12851
Figure 5. Gate 1 Input Capacitance vs. Drain Current
3.0
C
issg2
– Gate 2 Input Capacitance ( pF )
6V 5V 4V 3V
V
DS
= 15V
2V
1V
2.5
2.0
1.5
1.0
0.5
0
–2
–1
0
1
2
V
DS
=15V
V
G1S
=0
f=1MHz
0.5V
0
V
G2S
= –1V
–0.5
0.0
0.5
1.0
1.5
3
4
5
V
G1S
– Gate 1 Source Voltage ( V )
12854
V
G2S
– Gate 2 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
4 (8)
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
BF996S
2.0
C
oss
– Output Capacitance ( pF )
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
12856
20
V
G2S
=4V
f=1MHz
Im ( y ) ( mS )
11
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10 12 14 16 18 20
12857
f=1300MHz
1100MHz
900MHz
700MHz
500MHz
300MHz
100MHz
0
1
2
3
4
5
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
6
7
8
9
10
V
DS
– Drain Source Voltage ( V )
Re (y
11
) ( mS )
Figure 7. Output Capacitance vs. Drain Source Voltage
10
– Transducer Gain ( dB )
0
–10
–20
–30
–40
–50
–60
–2.0 –1.5 –1.0 –0.5 0.0
12855
Figure 10. Short Circuit Input Admittance
0
–5
Im ( y ) ( mS )
21
–10
–15
–20
15mA
1300MHz
–25
–15
12858
f= 200MHz
4V
3V
2V
1V
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=100MHz
300MHz
500MHz
0
–0.2V
–0.4V
–0.6V
–0.8V
V
G2S
=–1V
I
D
=5mA
10mA
700MHz
900MHz
1100MHz
S
21
2
0.5
1.0
1.5
2.0
–10
–5
0
5
10
15
20
V
G1S
– Gate 1 Source Voltage ( V )
Re (y
21
) ( mS )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
20
18
16
14
12
10
8
6
4
2
0
0
12850
Figure 11. Short Circuit Forward Transfer Admittance
7
6
5
Im ( y ) ( mS )
22
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
f=1300MHz
y
21s
– Forward Transadmittance ( mS )
V
DS
=15V
f=1MHz
4V
3V
2V
1100MHz
900MHz
700MHz
1V
4
3
2
1
100MHz
0
0.0
500MHz
300MHz
V
G2S
=0
2
4
6
8
10
12
14
0.5V
16
18
12859
0.5
1.0
1.5
2.0
2.5
3.0
I
D
– Drain Current ( mA )
Re (y
22
) ( mS )
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Output Admittance
TELEFUNKEN Semiconductors
Rev. A2, 03-Mar-97
5 (8)
