DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
August 1995
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
They are intended for wideband
applications in the GHz range such as
analog satellite television systems
and portable RF communication
equipment.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
MARKING
TYPE NUMBER
BFG67W
BFG67W/X
BFG67W/XR
PINNING
PIN
DESCRIPTION
CODE
V2
BFG67W
BFG67W/X; BFG67W/XR
fpage
V6
V7
4
3
1
Top view
2
MBK523
BFG67W
(see Fig.1)
1
2
3
4
collector
base
emitter
emitter
alfpage
Fig.1 SOT343.
BFG67W/X
(see Fig.1)
1
2
3
4
collector
emitter
base
emitter
2
Top view
1
MSB842
3
4
BFG67W/XR
(see Fig.2)
1
2
3
4
collector
emitter
base
emitter
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
up to T
s
= 85
°C
I
C
= 15 mA; V
CE
= 5 V
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz; T
amb
= 25
°C
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 8 V; f = 2 GHz
open emitter
open base
CONDITIONS
MIN. TYP. MAX. UNIT
−
−
−
−
60
−
−
−
−
−
−
−
100
0.5
7.5
20
10
50
500
−
−
−
pF
GHz
dB
dB
V
V
mA
mW
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz; T
amb
= 25
°C −
15.5
−
2.2
−
August 1995
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open base
open collector
CONDITIONS
open emitter
BFG67W
BFG67W/X; BFG67W/XR
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
50
500
+150
175
V
V
V
UNIT
mA
mW
°C
°C
up to T
s
= 85
°C;
see Fig.3; note 1
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 85
°C;
note 1
VALUE
180
UNIT
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. T
s
is the temperature at the soldering point of the collector pin.
handbook, halfpage
600
MBG248
P tot
(mW)
400
200
0
0
50
100
150
200
T s (
o
C)
Fig.3 Power derating curve.
August 1995
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
(unless otherwise specified).
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
PARAMETER
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
CONDITIONS
open emitter; I
C
= 10
µA;
I
E
= 0
open base; I
C
= 10 mA; I
B
= 0
BFG67W
BFG67W/X; BFG67W/XR
MIN.
−
−
−
−
60
TYP.
−
−
−
−
100
7.5
0.7
1.3
0.5
15.5
10
1.3
1.7
2.2
MAX.
20
10
2.5
50
−
−
−
−
−
−
−
−
−
−
UNIT
V
V
V
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
open collector; I
E
= 10
µA;
I
C
= 0
open emitter; V
CB
= 5 V; I
E
= 0
I
C
= 15 mA; V
CE
= 5 V
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz;
−
T
amb
= 25
°C
I
E
= i
e
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
−
−
−
−
−
−
−
−
F
noise figure
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 1 GHz
Γ
s
= Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
f = 1 GHz
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz
Note
s
21 2
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
=
10 log ------------------------------------------------------------ dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
August 1995
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W
BFG67W/X; BFG67W/XR
MBB301
handbook, halfpage
120
handbook, halfpage
1
MLB984
C re
(pF)
h FE
0.8
80
0.6
0.4
40
0.2
0
0
20
40
I C (mA)
60
0
0
4
8
12
16
V CB (V)
V
CE
= 5 V.
I
C
= 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
10
MLB985
fT
(GHz)
8
6
4
2
0
0
10
20
30
I C (mA)
40
f = 2 GHz; V
CE
= 8 V; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
August 1995
5
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