BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
Rev. 05 — 26 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP
Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
FEATURES
•
High power gain
•
Low noise figure
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
PINNING
PIN
BFG93A
1
2
3
4
collector
base
emitter
emitter
Top view
MSB014
DESCRIPTION
handbook, 2 columns
4
3
1
2
BFG93A/X
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT143B.
MARKING
TYPE NUMBER
BFG93A
BFG93A/X
CODE
R8%
%MX
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
T
s
≤
85
°C
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 1 GHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
open base
CONDITIONS
open emitter
−
−
−
−
−
4.5
−
−
−
MIN.
−
−
−
−
0.6
6
16
10
1.7
TYP.
MAX.
15
12
35
300
−
−
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
Rev. 05 - 26 November 2007
2 of 13
NXP
Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 1 GHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
MIN.
−
40
−
−
−
4.5
−
−
−
−
TYP.
−
90
0.9
1.9
0.6
6
16
10
1.7
2.3
MAX.
50
−
−
−
−
−
−
−
−
−
pF
pF
pF
GHz
dB
dB
dB
dB
UNIT
nA
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
290
UNIT
K/W
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction operating temperature
T
s
≤
85
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
15
12
2
35
300
+150
175
V
V
V
mA
mW
°C
°C
UNIT
S
21 2
=
10 log -------------------------------------------------------------- dB.
(
1
–
S
11 2
) (
1
–
S
22 2
)
Rev. 05 - 26 November 2007
3 of 13
NXP
Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
MBG245
400
handbook, halfpage
tot
(mW)
300
P
handbook, halfpage
120
MCD087
h FE
80
200
40
100
0
0
50
100
150
T (
o
C)
s
200
0
0
10
20
IC (mA)
30
V
CE
= 5 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current; typical values.
1.0
handbook, halfpage
C re
(pF)
0.8
MCD088
handbook, halfpage
8
MCD089
fT
(GHz)
6
0.6
4
0.4
2
0.2
0
0
4
8
12
VCB (V)
16
0
0
10
20
30
I C (mA)
40
I
C
= i
c
= 0; f = 1 MHz.
V
CE
= 5 V; T
amb
= 25
°C;
f = 500 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
Rev. 05 - 26 November 2007
4 of 13
NXP
Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
handbook, halfpage
30
MCD090
handbook, halfpage
30
MCD091
gain
(dB)
20
MSG
gain
(dB)
G UM
20
MSG
G UM
10
10
0
0
10
20
30
I C (mA)
40
0
0
10
20
30
I C (mA)
40
V
CE
= 8 V; f = 500 MHz.
V
CE
= 8 V; f = 1 GHz.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
Gain as a function of collector current;
typical values.
handbook, halfpage
50
MCD092
handbook, halfpage
50
MCD093
gain
(dB)
gain
(dB)
40
G UM
40
MSG
G UM
30
MSG
30
20
20
G max
10
G max
10
0
10
10
2
10
3
f
(MHz)
10
4
0
10
10
2
10
3
f (MHz)
10
4
V
CE
= 8 V; I
C
= 10 mA.
V
CE
= 8 V; I
C
= 30 mA.
Fig.8
Gain as a function of frequency; typical
values.
Fig.9
Gain as a function of frequency; typical
values.
Rev. 05 - 26 November 2007
5 of 13
单片机
