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BFP 420 E6327

射频(RF)双极晶体管 TRANS GP BJT NPN 4.5V.035A

器件类别:半导体    分立半导体    晶体管    RF晶体管    射频(RF)双极晶体管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
厂商名称
Infineon(英飞凌)
产品种类
射频(RF)双极晶体管
晶体管类型
Bipolar
技术
Si
晶体管极性
NPN
直流集电极/Base Gain hfe Min
60
集电极—发射极最大电压 VCEO
4.5 V
发射极 - 基极电压 VEBO
1.5 V
集电极连续电流
0.035 A
最小工作温度
- 65 C
最大工作温度
+ 150 C
配置
Single
安装风格
SMD/SMT
封装 / 箱体
SOT-343
封装
Cut Tape
封装
Reel
集电极—基极电压 VCBO
15 V
直流电流增益 hFE 最大值
60 at 20 mA at 4 V
高度
0.9 mm
长度
2 mm
工作频率
25000 MHz
类型
RF Bipolar Small Signal
宽度
1.25 mm
增益带宽产品fT
25000 MHz
最大直流电集电极电流
0.035 A
Pd-功率耗散
160 mW
工厂包装数量
3000
文档预览
BFP420
Low Noise Silicon Bipolar RF Transistor
For high gain and low noise amplifiers
Minimum noise figure
NF
min
= 1.1 dB at 1.8 GHz
Outstanding
G
ms
= 21 dB at 1.8 GHz
For oscillators up to 10 GHz
Transition frequency
f
T
= 25 GHz
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP420
Marking
AMs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.1
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
98 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
15
15
1.5
60
9
210
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is
measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter
Symbol
R
thJS
1
Value
Unit
Junction - soldering point
1)
250
K/W
2013-09-19
BFP420
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 4 V, pulse measured
1
For
Unit
max.
-
10
100
3
130
V
µA
nA
µA
-
typ.
5
-
-
-
95
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
60
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-19
BFP420
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 30 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 5 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 20 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 20 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
1dB compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
,
f
= 1.8 GHz
1
G
Unit
max.
-
0.3
GHz
pF
typ.
25
0.15
f
T
C
cb
18
-
C
ce
-
0.37
-
C
eb
-
0.55
-
NF
min
G
ms
-
-
1.1
21
-
-
dB
dB
|S
21
|
2
14
17
-
IP3
-
22
-
dBm
P
-1dB
-
12
-
ms = |S21 /
S
12 |
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-19
BFP420
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
240
mW
10
3
K/W
180
150
R
thJS
10
2
P
tot
120
90
60
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
30
10
1 -7
10
0
0
30
60
90
°C
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
1
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
0.3
P
totmax
/P
totDC
pF
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
C
cb
-3
-2
0.2
0.15
0.1
0.05
10
0 -7
10
10
-6
10
-5
10
-4
10
10
s
10
0
0
0
1
2
V
4
t
p
V
CB
4
2013-09-19
BFP420
Transition frequency
f
T
=
ƒ
(I
C
)
f
= 2 GHz
V
CE
= parameter in V
30
GHz
2 to 4
40
44
Power gain
G
ma
,
G
ms
, |S
21
|² =
ƒ
(f)
V
CE
= 2 V,
I
C
= 20 mA
1.5
24
22
20
1
0.75
36
32
f
T
G
28
ms
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
mA
0.5
G [dB]
24
20
G
16
2
ma
|S
21
|
12
8
4
40
0
0
1
2
3
4
5
6
I
C
f [GHz]
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 2V
f
= parameter in GHz
30
dB
0.9
Power gain
G
ma
,
G
ms
=
ƒ
(V
CE
)
I
C
= 20 mA
f
= parameter in GHz
30
dB
0.9
24
22
20
1.8
24
22
20
1.8
2.4
3
4
5
6
G
18
16
14
12
10
8
6
4
2
0
0
4
8
12
16
20
24
28
G
2.4
3
4
5
6
18
16
14
12
10
8
6
4
2
32
mA
40
0
0
0.5
1
1.5
2
2.5
3
3.5
V
4.5
I
C
V
CE
5
2013-09-19
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参数对比
与BFP 420 E6327相近的元器件有:BFP-420-E6433、BFP 420 E6740、BFP 420 H6740。描述及对比如下:
型号 BFP 420 E6327 BFP-420-E6433 BFP 420 E6740 BFP 420 H6740
描述 射频(RF)双极晶体管 TRANS GP BJT NPN 4.5V.035A RF Bipolar Transistors NPN Silicon RF TRANSISTOR RF Bipolar Transistors RF BIP TRANSISTORS 射频(RF)双极晶体管 RF BIP TRANSISTOR
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