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BFQ256-T

TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

器件类别：分立半导体    晶体管   

厂商名称：NXP(恩智浦)

厂商官网：https://www.nxp.com

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
NXP(恩智浦)
包装说明
SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.3 A
基于收集器的最大容量
1.6 pF
集电极-发射极最大电压
65 V
配置
SINGLE
JESD-30 代码
R-PSSO-G4
元件数量
1
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
SINGLE
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
1300 MHz
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ256; BFQ256A
PNP video transistors
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors
Product specification
PNP video transistors
FEATURES
•
High breakdown voltages
•
Low output capacitance
•
High gain bandwidth
•
Good thermal stability
•
Gold metallization ensures
excellent reliability
•
Surface mounting.
APPLICATIONS
•
Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT223
plastic package.
NPN complements: BFQ236 and
BFQ236A.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
page
BFQ256; BFQ256A
4
1
Top view
2
3
MSB002 - 1
Fig.1
Simplified outline
(SOT223).
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ256
BFQ256A
V
CER
collector-emitter voltage
BFQ256
BFQ256A
I
C
P
tot
h
FE
f
T
collector current (DC)
total power dissipation
DC current gain
transition frequency
BFQ256
BFQ256A
Note
1. T
s
is the temperature at the soldering point of the collector lead.
T
s
≤
115
°C;
note 1
I
C
=
−50
mA; V
CE
=
−10
V
I
C
=
−50
mA; V
CE
=
−10
V; f = 100 MHz
1
0.8
1.3
1.2
−
−
GHz
GHz
R
BE
= 100
Ω
−
−
−
−
20
−
−
−
−
30
−95
−110
−300
2
−
V
V
mA
W
open emitter
−
−
−
−
−100
−115
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
PNP video transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ256
BFQ256A
V
CEO
collector-emitter voltage
BFQ256
BFQ256A
V
CER
collector-emitter voltage
BFQ256
BFQ256A
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector lead.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Notes
1. T
s
is the temperature at the soldering point of the collector lead.
PARAMETER
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
115
°C;
note 1; see Fig.3
open collector
R
BE
= 100
Ω
open base
CONDITIONS
open emitter
BFQ256; BFQ256A
MIN.
−
−
−
−
−
−
−
−
−
−65
−
MAX.
−100
−115
−65
−95
−95
−110
−3
−300
2
+150
175
V
V
V
V
V
V
V
UNIT
mA
W
°C
°C
CONDITIONS
VALUE
30
UNIT
K/W
thermal resistance from junction to soldering point T
s
≤
115
°C;
P
tot
= 2 W;
notes 1 and 2
2. Device mounted on a printed-circuit board measuring 40
×
40
×
1 mm (collector pad 35
×
17 mm).
1997 Oct 02
3
Philips Semiconductors
Product specification
PNP video transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
BFQ256
BFQ256A
V
(BR)CEO
collector-emitter breakdown voltage I
C
=
−10
mA; I
B
= 0
BFQ256
BFQ256A
V
(BR)CER
collector-emitter breakdown voltage I
C
=
−1
mA; R
BE
= 100
Ω
BFQ256
BFQ256A
I
CES
I
CBO
h
FE
C
c
C
cb
f
T
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector capacitance
collector-base capacitance
transition frequency
BFQ256
BFQ256A
I
B
= 0; V
CE
=
−50
V
I
E
= 0; V
CB
=
−50
V
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
CB
=
−10
V; f = 1 MHz;
see Fig.6
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz; see Fig.5
PARAMETER
collector-base breakdown voltage
CONDITIONS
I
C
=
−100 µA;
I
E
= 0
BFQ256; BFQ256A
MIN.
−100
−115
−65
−95
−95
−110
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
30
1.9
1.6
MAX.
−
−
−
−
−
−
−100
−20
−
−
−
UNIT
V
V
V
V
V
V
µA
µA
pF
pF
I
C
=
−50
mA; V
CE
=
−10
V; see Fig.4 20
1
0.8
1.3
1.2
−
−
GHz
GHz
−400
handbook, halfpage
IC
(mA)
−300
MRA606
handbook, halfpage
3
MRA600
Ptot
(W)
2
−200
1
−100
BFQ256
0
0
−20
−40
−60
−80
BFQ256A
0
0
50
100
150
200
−100
−120
VCER (V)
Ts (
o
C)
R
BE
≤
100
Ω.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
4
Philips Semiconductors
Product specification
PNP video transistors
BFQ256; BFQ256A
handbook, halfpage
50
MBB449
MBC970
2.0
handbook, halfpage
fT
(GHz)
hFE
40
1.5
BFQ256
30
BFQ256A
1.0
20
0
−100
−200
IC (mA)
−300
0.5
0
−50
−100
IC (mA)
−150
V
CE
=
−10
V.
V
CE
=
−10
V; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
5
MRA605
Ccb
(pF)
4
3
2
1
0
−5
−10
−15
−20
−25
−30
−35
VCB (V)
I
C
= 0; f = 1 MHz.
Fig.6
Collector-base capacitance as a function of
collector-base voltage; typical values.
1997 Oct 02
5
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参数对比
与BFQ256-T相近的元器件有：BFQ256AT/R、BFQ256T/R、BFQ256、BFQ256A、BFQ256A-T。描述及对比如下：
型号 BFQ256-T BFQ256AT/R BFQ256T/R BFQ256 BFQ256A BFQ256A-T
描述 TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
包装说明 SMALL OUTLINE, R-PSSO-G4 PLASTIC PACKAGE-4 PLASTIC PACKAGE-4 SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown compliant compliant unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A
基于收集器的最大容量 1.6 pF 1.6 pF 1.6 pF 1.6 pF 1.6 pF 1.6 pF
集电极-发射极最大电压 65 V 95 V 65 V 65 V 95 V 95 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
JESD-30 代码 R-PSSO-G4 R-PSSO-G4 R-PSSO-G4 R-PSSO-G4 R-PSSO-G4 R-PSSO-G4
元件数量 1 1 1 1 1 1
端子数量 4 4 4 4 4 4
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 1300 MHz 1200 MHz 1300 MHz 1300 MHz 1200 MHz 1200 MHz
针数 - 4 4 4 4 -
最小直流电流增益 (hFE) - 20 20 20 20 -
最高工作温度 - 175 °C 175 °C 175 °C 175 °C -
最大功率耗散 (Abs) - 2 W 2 W 2 W 2 W -
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器件捷径:
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