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BFY50G4

1000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, METAL CAN, TO-39, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：SEMELAB

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
SEMELAB
零件包装代码
BCY
包装说明
CYLINDRICAL, O-MBCY-W3
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
1 A
集电极-发射极最大电压
35 V
配置
SINGLE
最小直流电流增益 (hFE)
30
JEDEC-95代码
TO-205AD
JESD-30 代码
O-MBCY-W3
JESD-609代码
e4
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
GOLD
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
文档预览
SILICON
NPN TRANSISTOR
BFY50
•
•
•
V(BR)CEO = 35V (Min).
Hermetic TO-39 Metal Package.
Ideally Suited General Purpose Amplifier Applications
Screening Options Available
•
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
80V
35V
6V
1.0A
0.8W
4.57mW/°C
5W
28.6mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
Max.
218.75
35
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 3085
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON
NPN TRANSISTOR
BFY50
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Test Conditions
IC = 10mA
IC = 10µA
IE = 10µA
VCB = 60V
IB = 0
IE = 0
IC = 0
IE = 0
TA = 100°C
VEB = 5V
IC = 0
TA = 100°C
IC = 10mA
VCE = 6V
VCE = 6V
VCE = 6V
IB = 15mA
IB = 100mA
IB = 100mA
Min.
35
80
6
Typ
Max.
Units
V(BR)CBO
V(BR)EBO
ICBO
V
50
2.5
50
2.8
20
30
15
0.2
1.0
2
nA
µA
nA
µA
IEBO
Emitter Cut-Off Current
hFE
(1)
Forward-current transfer
ratio
IC = 150mA
IC = 1.0A
VCE(sat)
VBE(sat)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 150mA
IC = 1.0A
IC = 1.0A
V
(1)
DYNAMIC CHARACTERISTICS
hfe
Small-Signal Current Gain
IC = 1.0mA
f = 1.0KHz
Transition Frequency
IC = 50mA
f = 20MHz
Output Capacitance
VCB = 12V
f = 1.0MHz
IE = 0
12
pF
VCE = 6V
60
MHz
VCE = 6V
10
fT
Cobo
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3085
Issue 2
Page 2 of 3
SILICON
NPN TRANSISTOR
BFY50
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3085
Issue 2
Page 3 of 3
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参数对比
与BFY50G4相近的元器件有：BFY50-QR-BG4、BFY50-QR-B、BFY50.MOD、BFY50.MODE4。描述及对比如下：
型号 BFY50G4 BFY50-QR-BG4 BFY50-QR-B BFY50.MOD BFY50.MODE4
描述 1000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, METAL CAN, TO-39, 3 PIN 1000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, METAL CAN, TO-39, 3 PIN 1000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, METAL CAN, TO-39, 3 PIN 1000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, METAL CAN, TO-39, 3 PIN 1000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, METAL CAN, TO-39, 3 PIN
是否无铅 不含铅 不含铅 含铅 含铅 不含铅
是否Rohs认证 符合 符合 不符合 不符合 符合
零件包装代码 BCY BCY BCY BCY BCY
包装说明 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
针数 2 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 1 A 1 A 1 A 1 A 1 A
集电极-发射极最大电压 35 V 35 V 35 V 35 V 35 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 30 30 30 30 30
JEDEC-95代码 TO-205AD TO-205AD TO-205AD TO-205AD TO-205AD
JESD-30 代码 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
最高工作温度 200 °C 200 °C 200 °C 200 °C 200 °C
封装主体材料 METAL METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
厂商名称 SEMELAB - SEMELAB SEMELAB SEMELAB
JESD-609代码 e4 e4 - - e4
端子面层 GOLD GOLD - - GOLD
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器件捷径:
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