TECHNICAL NOTE
HIGH GRADE Specification HIGH RELIABILITY series
SPI BUS Serial EEPROMs
Supply voltage 1.8V~5.5V
Operating temperature –40°C~+85°C type
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
●
Description
BR25L
-W series is a serial EEPROM of SPI BUS interface method.
Features
High speed clock action up to 5MHz (Max.)
Wait function by HOLD terminal
Part or whole of memory arrays settable as read only memory area by program
1.8 ~ 5.5V single power source action most suitable for battery use
Page write mode useful for initial value write at factory shipment
Highly reliable connection by Au pad and Au wire
For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
Auto erase and auto end function at data rewrite
Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
Page write
At standby action (5V) : 0.1µA (Typ.)
Number of
Address auto increment function at read action
pages
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
Product
Write prohibition by WP pin
number
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage
SOP8, SOP-J8, SSOP-B8, TSSOP-B8, MSOP8 TSSOP-B8J package *1 *2
Data
at
shipment
Memory
array
:
FFh,
status
register
WPEN,
BP1,
BP0
:
0
Data kept for 40 years
Data rewrite up to 1,000,000 times
*1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8
*2 BR25L320/640-W : SOP8, SOP-J8
16 Byte
BR25L010-W
BR25L020-W
BR25L040-W
32 Byte
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
BR25L series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
32Kbit
64Kbit
Bit format
128
×
8
256
×
8
512
×
8
1K
×
8
2K
×
8
4K
×
8
8K
×
8
Type
BR25L010-W
BR25L020-W
BR25L040-W
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
Power source
voltage
SOP8
SOP-J8
SSOP-B8
TSSOP-B8
MSOP8
TSSOP-B8J
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
Ver.B Oct.2005
Absolute maximum ratings (Ta = 25˚C)
Parameter
Impressed voltage
Recommended action conditions
Unit
V
*1
*2
*3
Symbol
V
CC
Limits
-0.3 ~
+6.5
450(SOP8)
450(SOP-J8)
Parameter
Power source voltage
Input voltage
Symbol
V
CC
Vin
Limits
1.8 ~ 5.5
0 ~ V
CC
Limits
Typ.
Unit
V
Permissible
dissipation
Pd
300(SSOP-B8)
310(MSOP8)
mW
Memory cell characteristics (Ta=25˚C, V
CC
=1.8 ~ 5.5V)
Parameter
Number of data rewrite times
Data hold years
*1
*1
330(TSSOP-B8)
*4
*5
310(TSSOP-B8J)
*6
Storage
temperature range
Operating
temperature range
Min.
1,000,000
40
Max.
Unit
Times
Years
–
–
–
–
Tstg
Topr
Terminal voltage
–
-65 ~
+125
-40 ~
+85
-0.3 ~ V
CC
+0.3
˚C
˚C
V
*1:Not 100% TESTED
Input / output capacity (Ta=25˚C, frequency=5MHz)
Parameter
Input capacity
*1
Output capacity
*1
Symbol Conditions
C
IN
V
IN
=GND
C
OUT
V
OUT
=GND
Min.
When using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3),
3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1˚C
–
–
Max.
8
8
Unit
pF
pF
*1:Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta =
–
40 ~ +85˚C, V
CC
= 1.8 ~ 5.5V)
Parameter
"H" input voltage 1
"L" input voltage 1
"L" output voltage 1
"L" output voltage 2
"H" output voltage 1
"H" output voltage 2
Input leak current
Output leak current
Symbol
VIH1
VIL1
VOL1
VOL2
VOH1
VOH2
ILI
ILO
I
CC
1
Min.
0.7x
V
CC
-0.3
0
0
V
CC
-0.5
V
CC
-0.2
-1
-1
Limits
Typ.
Max.
V
CC
+0.3
0.3x
V
CC
0.4
0.2
V
CC
V
CC
1
1
1.0
Unit
V
V
V
V
V
V
µA
µA
mA
1.8≤V
CC
≤5.5V
1.8≤V
CC
≤5.5V
IOL=2.1mA(V
CC
=2.5V ~ 5.5V)
IOL=150µA(V
CC
=1.8V ~ 2.5V)
IOH=-0.4mA(V
CC
=2.5V ~ 5.5V)
IOH=-100µA(V
CC
=1.8V ~ 2.5V)
V
IN
=0 ~ V
CC
V
OUT
=0 ~ V
CC
,CS=V
CC
V
CC
=1.8V,fSCK=2MHz,tE/W=5ms
Byte write
Page write
Write status register
V
CC
=2.5V,fSCK=5MHz,tE/W=5ms
Byte write
Page write
Write status register
V
CC
=5.5V,fSCK=5MHz,tE/W=5ms
Byte write
Page write
Write status register
V
CC
=2.5V,fSCK=5MHz
Read
Read status register
V
CC
=5.5V,fSCK=5MHz
Read
Read status register
V
CC
=5.5V
CS=HOLD=WP=V
CC
,SCK=SI=V
CC
or =GND,SO=OPEN
•
Radiation resistance design is not made.
Conditions
–
–
–
–
–
–
–
–
–
–
Current consumption at write
action
I
CC
2
–
–
2.0
mA
I
CC
3
–
–
3.0
mA
Current consumption at read
action
I
CC
4
–
–
1.5
mA
I
CC
5
Standby current
ISB
–
–
–
–
2.0
2
mA
µA
Block diagram
CS
INSTRUCTION DECODE
CONTROL CLOCK
SCK
GENERATION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
VOLTAGE
DETECTION
SI
INSTRUCTION
REGISTER
ADDRESS
REGISTER
ADDRESS
DECODER
STATUS REGISTER
7~13bit *1
7~13bit *1
HOLD
1K~64K
EEPROM
8bit
WP
DATA
REGISTER
8bit
READ/WRITE
AMP
*1
7bit : BR25L010-W
8bit : BR25L020-W
9bit : BR25L040-W
10bit : BR25L080-W
11bit : BR25L160-W
12bit : BR25L320-W
13bit : BR25L640-W
SO
Fig.1 Block diagram
2/16
Pin assignment and description
V
CC
HOLD
SCK
SI
Terminal name Input/output
V
CC
GND
CS
SCK
SI
SO
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended temporarily (HOLD status).
Write protect input
Write command is prohibited.
*1
Write status register command is prohibited.
*1:BR25L010/020/040-W
–
–
Input
Input
Input
Output
Input
Input
BR25L010-W
BR25L020-W
BR25L040-W
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
CS
SO
WP
GND
HOLD
WP
Fig. 2 Pin assignment diagram
Operating timing characteristics
(Ta = -40 ~ +85˚C, unless otherwise specified, load capacity C
L1
100pF)
Parameter
Symbol
1.8≤V
CC
<2.5V
2.5≤V
CC
<5.5V
Unit
Min. Typ. Max. Min. Typ. Max.
–
–
–
–
2
5
MHz
200
–
–
85
–
–
ns
85
200
–
–
–
–
ns
85
200
–
–
–
–
ns
ns
200
–
–
90
–
–
ns
200
–
–
85
–
–
90
200
–
–
–
–
ns
90
200
–
–
–
–
ns
20
40
–
–
–
–
ns
40
50
–
–
–
–
ns
ns
–
–
150
–
–
70
CS
Sync data input / output timing
tCS
tCSS
tSCKS
SCK
tSCKWL tSCKWH
tRC
tFC
SCK frequency
fSCK
SCK high time
tSCKWH
tSCKWL
SCK low time
tCS
CS high time
tCSS
CS setup time
CS hold time
tCSH
SCK setup time
tSCKS
SCK hold time
tSCKH
tDIS
SI setup time
tDIH
SI hold time
tPD1
Data output delay time 1
Data output delay time 2
tPD2
(CL
2
=30pF)
Output hold time
Output disable time
HOLD setting
setup time
HOLD setting
hold time
HOLD release
setup time
HOLD release
hold time
Time from HOLD
to output High-Z
Time from HOLD
to output change
SCK
rise time
SCK
fall time
OUTPUT
rise time
OUTPUT
fall time
Write time
*1
tDIS tDIH
SI
SO
High-Z
Fig. 3 Input timing
SI is taken into IC inside in sync with data rise edge of SCK. Input
address and data from the most significant bit MSB.
tCS
CS
tCSH tSCKH
–
0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
145
–
0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ms
SCK
tOH
tOZ
tHFS
tHFH
tHRS
tHRH
tHOZ
tHPD
tRC
tFC
tRO
tFO
tE/W
–
250
–
100
SI
SO
tPD
–
120
90
120
140
–
60
40
60
70
tOH
tRO,tFO tOZ
High-Z
–
–
–
–
250
150
1
1
100
100
5
–
–
–
–
100
70
1
1
50
50
5
Fig. 4 Input / output timing
SO is output in sync with data fall edge of SCK. Data is output
from the most significant bit MSB.
"H"
CS
"L"
tHFS tHFH
tHRS tHRH
SCK
tDIS
–
–
–
–
–
–
–
–
–
–
–
–
–
–
SI
SO
HOLD
n+1
tHOZ
Dn+1
Dn
High-Z
n
tHPD
Dn
n-1
Dn-1
Fig. 5 HOLD timing
*1
*1
*1
*1NOT 100% TESTED
AC measurement conditions
Parameter
Load capacity 1
Load capacity 2
Input rise time
Input fall time
Input voltage
Input / output judgment voltage
Symbol
C
L1
C
L2
Limits
Unit
Min. Typ. Max.
–
–
100
pF
–
–
30
pF
–
–
50
ns
–
–
50
ns
0.2V
CC
/0.8V
CC
V
0.3V
CC
/0.7V
CC
V
–
–
–
–
3/16
Characteristic data (The following characteristic data are Typ. values.)
6
6
1
5
5
0.8
4
VIH[V]
VIL[V]
SPEC
4
VOL[V]
Ta=85˚C
3
Ta=25˚C
Ta=-40˚C
0.6
Ta=85˚C
0.4
SPEC
Ta=25˚C
3
2
Ta=85˚C
Ta=25˚C
Ta=-40˚C
1
2
3
V
CC
[V]
4
5
6
2
0.2
SPEC
0
0
1
2
3
V
CC
[V]
4
5
6
0
0
1
2
3
IOL[mA]
4
Ta=-40˚C
5
6
1
1
0 0
Fig.6 "H" input voltage VIH(CS,SCK,SI,HOLD,WP)
Fig.7 "L" input voltage VIL(CS,SCK,SI,HOLD,WP)
Fig.8 "L" output voltage VOL-IOL(V
CC
=1.8V)
2
1
2.6
Ta=-40˚C
Ta=-40˚C
1.8
0.8
2.4
VOH[V]
1.6
SPEC
1.4
VOL[V]
VOH[V]
0.6
Ta=25˚C
Ta=85˚C
SPEC
0.4
Ta=85˚C
Ta=25˚C
2.2
SPEC
2
Ta=25˚C
Ta=85˚C
0.2
Ta=-40˚C
1.2
0
0.4
IOH[mA]
0.8
0
0
1
2
IOL[mA]
3
4
5
1.8
0
0.4
IOH[mA]
0.8
Fig.9 "H" output voltage VOH-IOH(V
CC
=1.8V)
Fig.10 "L" output voltage VOL-IOL(V
CC
=2.5V)
Fig.11 "H" output voltage VOH-IOH(V
CC
=2.5V)
1.2
SPEC
1
1.2
SPEC
1
4
fSCK=5MHz
DATA=55h
3
V
CC
=2.5V 2mA
V
CC
=5.5V 3mA
SPEC
0.8
ILO[µA]
ILI[µA]
0.8
ICC2,3[mA]
SPEC
Ta=25˚C
Ta=-40˚C
1
Ta=85˚C
0
0
1
2
3
V
CC
[V]
4
5
6
0
1
2
3
V
CC
[V]
4
5
6
0.8
0.6
2
0.4
Ta=85˚C
Ta=25˚C
Ta=-40˚C
0.4
Ta=85˚C
Ta=25˚C
Ta=-40˚C
0.2
0.2
0
0
1
2
3
V
CC
[V]
4
5
6
0
Fig.12 Input leak current ILI(CS,SCK,SI,WP,HOLD)
Fig.13 Output leak current ILO(SO)
Fig.14 Current consumption at WRITE operation
ICC1,2,3(WRITE,PAGE WRITE,WRSR,fSCK=5MHz)
BR25L010-W,BR25L020-W,BR25L040-W
2.5
fSCK=5MHz
DATA=55h
2
SPEC
ICC4,5[mA]
Vcc=2.5V 1.5mA
Vcc=5.5V 2.0mA
2.5
SPEC
2
100
Ta=-40˚C
Ta=25˚C
SPEC
10
Ta=25˚C
fSCK[MHz]
ISB[µA]
Ta=-40˚C
1.5
Ta=85˚C
1.5
SPEC
1
SPEC
1
Ta=85˚C
1
Ta=85˚C
Ta=25˚C
Ta=-40˚C
0.5
0.5
0
0
1
2
3
V
CC
[V]
4
5
6
0
0
1
2
3
V
CC
[V]
4
5
6
0.1
0
1
2
3
V
CC
[V]
4
5
6
Fig.15 Consumption current at READ operation
ICC4,5(READ,WRSR,fSK=5MHz)
Fig.16 Consumption current at standby operation ISB
Fig.17 SCK frequency fSCK
250
SPEC
200
250
SPEC
200
250
SPEC
200
tSCKWL[ns]
tSCKWH[ns]
150
150
tCS[ns]
150
SPEC
100
100
SPEC
Ta=85˚C
Ta=25˚C
100
Ta=25˚C
50
SPEC
Ta=-40˚C
50
Ta=-40˚C
50
Ta=85˚C
0
1
2
3
V
CC
[V]
4
5
6
Ta=85˚C
Ta=25˚C
Ta=-40˚C
0
0
1
2
3
V
CC
[V]
4
5
6
0
0
0
1
2
3
V
CC
[V]
4
5
6
Fig.18 tSCK high time tSCKWH
Fig.19 SCK low time tSCKWL
Fig.20 CS high time tCS
4/16
250
SPEC
200
250
60
SPEC
200
40
SPEC
150
tCSS[ns]
tCSH[ns]
tDIS[ns]
150
20
SPEC
SPEC
100
100
SPEC
Ta=85˚C
Ta=25˚C
0
Ta=85˚C
50
Ta=85˚C Ta=25˚C
Ta=-40˚C
50
Ta=-40˚C
-20
0
-50
0
1
2
3
V
CC
[V]
4
5
6
Ta=-40˚C Ta=25˚C
0
0
1
2
3
V
CC
[V]
4
5
6
-40
0
1
2
3
V
CC
[V]
4
5
6
Fig.21 CS setup time tCSS
Fig.22 CS hold time tCSH
Fig.23 SI setup time tDIS
60
SPEC
50
SPEC
40
tDIH[ns]
tPD1[ns]
200
SPEC
150
tPD2[ns]
200
150
SPEC
30
Ta=85˚C Ta=-40˚C
20
100
Ta=85˚C
SPEC
100
Ta=85˚C
SPEC
50
Ta=-40˚C
Ta=25˚C
6
0
0
1
2
3
V
CC
[V]
4
5
6
0
0
1
50
Ta=25˚C
Ta=-40˚C
2
3
V
CC
[V]
4
5
6
10
0
0
1
2
3
V
CC
[V]
4
Ta=25˚C
5
Fig.24 SI hold time tDIH
Fig.25 Data output delay time tPD1(CL=100pF)
Fig.26 Data output delay time tPD2(CL=30pF)
300
140
250
SPEC
120
100
tHFH[ns]
80
60
SPEC
40
Ta=25˚C
20
0
-20
0
1
2
3
V
CC
[V]
4
5
6
0
1
2
3
V
CC
[V]
4
5
6
Ta=85˚C
SPEC
tHRH[ns]
150
SPEC
120
200
tOZ[ns]
90
SPEC
150
SPEC
100
Ta=85˚C
50
Ta=-40˚C
0
60
30
Ta=25˚C
Ta=-40˚C
-30
0
1
2
3
V
CC
[V]
4
5
6
Ta=-40˚C Ta=85˚C
0
Ta=25˚C
Fig.27 Output disable time tOZ
Fig.28 HOLD setting hold time tHFH
Fig.29 HOLD release hold time tHRH
300
250
200
tHPD[ns]
tHFH[ns]
SPEC
160
SPEC
120
120
SPEC
90
80
SPEC
tRO[ns]
60
Ta=85˚C
150
SPEC
40
Ta=85˚C
Ta=25˚C
Ta=-40˚C
SPEC
100
Ta=85˚C
Ta=25˚C
Ta=-40˚C
0
0
1
2
3
V
CC
[V]
4
5
6
0
30
Ta=25˚C
50
Ta=-40˚C
0
5
6
0
1
2
3
V
CC
[V]
4
5
6
-40
0
1
2
3
V
CC
[V]
4
Fig.30 Time from HOLD to output High-Z tHOZ
Fig.31 Time from HOLD to output change tHPD
Fig.32 Output rise time tRO
120
SPEC
10
8
90
tE/W[ms]
6
SPEC
tFO[ns]
60
SPEC
Ta=85˚C
4
Ta=-40˚C
30
Ta=25˚C
Ta=-40˚C
2
Ta=85˚C
Ta=25˚C
0
0
1
2
3
V
CC
[V]
4
5
6
0
0
1
2
3
V
CC
[V]
4
5
6
Fig.33 Output fall time
Fig.34 Write cycle time tE/W
5/16
