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BS170ZL1G

MOSFET 60V 500mA N-Channel

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
制造商包装代码
29-11
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
EUROPEAN PART NUMBER
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
60 V
最大漏极电流 (Abs) (ID)
0.5 A
最大漏极电流 (ID)
0.5 A
最大漏源导通电阻
5 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-226AA
JESD-30 代码
O-PBCY-T3
JESD-609代码
e1
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
260
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
0.35 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
BS170G
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
http://onsemi.com
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Drain
−Source
Voltage
Gate−Source Voltage
Continuous
Non−repetitive (t
p
50
ms)
Drain Current (Note)
Total Device Dissipation @ T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
DS
V
GS
V
GSM
I
D
P
D
T
J
, T
stg
Value
60
±
20
±
40
0.5
350
−55
to
+150
Unit
Vdc
Vdc
Vpk
Adc
mW
°C
500 mA, 60 Volts
R
DS(on)
= 5.0
W
N−Channel
D
G
S
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
12
TO−92 (TO−226)
CASE 29
STYLE 30
3
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWWG
G
1
Drain
2
Gate
3
Source
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
Rev. 6
1
Publication Order Number:
BS170/D
BS170G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 100
mAdc)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain−Source On Resistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
Drain Cutoff Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 250 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(I
D
= 0.2 Adc) See Figure 1
Turn−Off Time
(I
D
= 0.2 Adc) See Figure 1
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
t
on
t
off
4.0
4.0
10
10
ns
ns
C
iss
60
pF
V
GS(Th)
r
DS(on)
I
D(off)
g
fs
0.8
2.0
1.8
200
3.0
5.0
0.5
Vdc
W
mA
mmhos
I
GSS
V
(BR)DSS
60
0.01
90
10
nAdc
Vdc
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
BS170G
BS170RLRAG
Package
TO−92 (TO−226)
(Pb−Free)
TO−92 (TO−226)
(Pb−Free)
Shipping
1000 Unit/Tube
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BS170G
RESISTIVE SWITCHING
+25 V
t
on
125
W
40 pF
50
W
1.0 MW
20 dB
50
W
ATTENUATOR
TO SAMPLING SCOPE
50
W
INPUT
V
out
OUTPUT
V
INVERTED
out
10%
INPUT
(V
in
Amplitude 10 Volts)
V
in
PULSE
WIDTH
t
off
V
in
PULSE GENERATOR
50
W
90%
10%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
2.0
VGS(th), THRESHOLD VOLTAGE
I D(on) , DRAIN CURRENT (AMPS)
V
DS
= V
GS
I
D
= 1.0 mA
2.0
V
GS
= 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
6.0 V
5.0 V
0.4
4.0 V
1.6
1.2
0.8
0.8
0.4
0
50
100
0
50
T
J
, JUNCTION TEMPERATURE (°C)
150
0
1.0
2.0
3.0
V
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
4.0
Figure 3. V
GS(th)
Normalized versus Temperature
Figure 4. On−Region Characteristics
2.0
I D(on) , DRAIN CURRENT (AMPS)
V
GS
= 10 V
9.0 V
8.0 V
C, CAPACITANCE (pF)
100
V
GS
= 0 V
1.6
80
1.2
7.0 V
0.8
6.0 V
0.4
5.0 V
4.0 V
0
20
10
30
V
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
40
60
40
C
iss
20
C
oss
C
rss
0
10
20
30
40
50
60
V
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristics
Figure 6. Capacitance versus
Drain−To−Source Voltage
http://onsemi.com
3
BS170G
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
BS170/D
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参数对比
与BS170ZL1G相近的元器件有:BS170RLRM、BS170RLRP、BS170RLRA、BS170RL1G、BS170RL1、BS170RLRPG。描述及对比如下:
型号 BS170ZL1G BS170RLRM BS170RLRP BS170RLRA BS170RL1G BS170RL1 BS170RLRPG
描述 MOSFET 60V 500mA N-Channel MOSFET 60V 500mA N-Channel MOSFET 60V 500mA N-Channel MOSFET 60V 500mA N-Channel MOSFET 60V 500mA N-Channel MOSFET 60V 500mA N-Channel MOSFET 60V 500mA N-Channel
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
针数 3 3 3 3 3 3 3
制造商包装代码 29-11 CASE 29-11 CASE 29-11 29-11 29-11 CASE 29-11 29-11
Reach Compliance Code unknown not_compliant not_compliant not_compliant unknown not_compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (Abs) (ID) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
最大漏极电流 (ID) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
最大漏源导通电阻 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609代码 e1 e0 e0 e0 e1 e0 e1
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) 260 240 240 240 260 240 260
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.35 W 0.35 W 0.35 W 0.83 W 0.35 W 0.35 W 0.35 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn80Pb20) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 40 30 30 30 40 30 40
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Brand Name ON Semiconductor - - ON Semiconductor ON Semiconductor - ON Semiconductor
是否无铅 不含铅 - - 含铅 不含铅 - 不含铅
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