型号 | BS208 | BS112 | BS212 | BS250 | BS108 |
---|---|---|---|---|---|
描述 | Transistor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Transistor | Transistor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknow |
配置 | Single | Single | Single | Single | Single |
最大漏极电流 (Abs) (ID) | 0.2 A | 0.2 A | 0.2 A | 0.25 A | 0.25 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
极性/信道类型 | P-CHANNEL | N-CHANNEL | P-CHANNEL | P-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 0.83 W | 0.83 W | 0.83 W | 0.83 W | 0.35 W |
表面贴装 | NO | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
厂商名称 | ITT Corporation | - | ITT Corporation | ITT Corporation | ITT Corporation |