MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
Power-MOSFET,25V
BSB008NE2LX
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOS
TM
Power-MOSFET,25V
BSB008NE2LX
1Description
Features
•Optimizedfore-fuseandOR-ingapplication
•UltralowRdsoninCanPAK-MXfootprint
•Lowprofile(<0.7mm)
•100%avalanchetested
•100%RgTested
•Double-sidedcooling
•CompatiblewithDirectFET®packageMXfootprintandoutline
1)
•QualifiedaccordingtoJEDEC
2)
fortargetapplications
CanPAKMX-size
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
g
(0V..10V)
Value
25
0.8
180
74
258
Unit
V
Drain
Gate
Source
mΩ
A
nC
nC
Type/OrderingCode
BSB008NE2LX
Package
MG-WDSON-2
Marking
04E2
RelatedLinks
-
CanPAK
TM
uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2)
J-STD20 and JESD22
1)
Final Data Sheet
2
Rev.2.0,2015-01-20
Drain
OptiMOS
TM
Power-MOSFET,25V
BSB008NE2LX
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.0,2015-01-20
OptiMOS
TM
Power-MOSFET,25V
BSB008NE2LX
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-20
-
-
-40
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
180
165
46
400
40
600
20
89
2.8
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=45K/W
T
C
=25°C
T
C
=25°C
I
D
=40A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=45K/W
IEC climatic category;
DIN IEC 68-1: 40/150/56
Continuous drain current
Pulsed drain current
1)
Avalanche current, single pulse
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
A
mJ
V
W
°C
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm
2
cooling area
3)
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
1.0
-
-
Max.
-
1.4
45
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
1)
2)
See figure 3 for more detailed information
See figure 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
4
Rev.2.0,2015-01-20
OptiMOS
TM
Power-MOSFET,25V
BSB008NE2LX
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
25
1.2
-
-
-
-
-
0.3
120
Typ.
-
-
0.1
10
10
0.75
0.6
0.5
240
Max.
-
2
10
100
100
1.0
0.8
1.0
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=250µA
V
DS
=25V,V
GS
=0V,T
j
=25°C
V
DS
=25V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=4.5V,I
D
=25A
V
GS
=10V,I
D
=30A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=30A
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
3800
3300
12.6
47.2
75
32.4
Max.
5100
-
-
-
-
-
Unit
Note/TestCondition
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
12000 16000 pF
pF
pF
ns
ns
ns
ns
Table6Gatechargecharacteristics
1)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
-
Typ.
27
19
73
81
146
2.2
258
88
74
Max.
36
-
110
-
194
-
343
-
98
Unit
nC
nC
nC
nC
nC
V
nC
nC
nC
Note/TestCondition
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to4.5V
V
DD
=12V,V
GS
=0V
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2015-01-20
移动便携
