SIPMOS
®
Small-Signal Transistor
BSS 129
q
q
q
q
q
q
q
V
DS
240 V
I
D
0.15 A
R
DS(on)
20
Ω
N channel
Depletion mode
High dynamic resistance
Available grouped in
V
GS(th)
1
2
3
Type
Ordering
Code
Tape and Reel
Information
Pin Configuration Marking
1
G
2
D
3
S
SS 129
Package
TO-92
BSS 129 Q62702-S015 E6288: 1500 pcs/reel;
2 reels/carton; gate first
BSS 129 Q67000-S116 E6296: 1500 pcs/reel;
2 reels/carton; source first
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
T
A
= 37 ˚C
Pulsed drain current,
Max. power dissipation,
Symbol
Values
240
240
±
14
±
20
0.15
0.45
1.0
– 55 … + 150
≤
125
E
55/150/56
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
I
D puls
P
tot
T
j
,
T
stg
R
thJA
–
–
A
W
˚C
K/W
–
T
A
= 25 ˚C
T
A
= 25 ˚C
Operating and storage temperature range
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
1
04.97
BSS 129
Electrical Characteristics
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V
GS
=
−
3 V,
I
D
= 0.25 mA
Gate threshold voltage
V
DS
= 3 V,
I
D
= 1 mA
Drain-source cutoff current
V
DS
= 240 V,
V
GS
=
−
3 V
T
j
= 25 ˚C
T
j
= 125 ˚C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
Drain-source on-resistance
V
GS
= 0 V,
I
D
= 0.014 A
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max
,
I
D
= 0.25 A
Input capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
Values
typ.
max.
Unit
V
(BR)DSS
240
–
−
1.2
–
−
0.7
V
V
GS(th)
I
DSS
−
1.8
–
–
–
–
10
7.0
100
200
100
nA
µA
nA
I
GSS
–
R
DS(on)
–
20
Ω
g
fs
0.14
0.2
110
20
7
4
10
15
25
–
S
pF
–
150
30
10
6
15
20
35
ns
C
iss
C
oss
–
C
rss
–
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
= 30 V,
V
GS
=
−
2 V ... + 5 V,
R
GS
= 50
Ω,
I
D
= 0.25 A
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
DD
= 30 V,
V
GS
=
−
2 V ... + 5 V,
R
GS
= 50
Ω,
I
D
= 0.25 A
Semiconductor Group
2
BSS 129
Electrical Characteristics
(cont’d)
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Reverse Diode
Continuous reverse drain current
T
A
= 25 ˚C
Pulsed reverse drain current
T
A
= 25 ˚C
Diode forward on-voltage
I
F
= 0.3 A,
V
GS
= 0
Values
typ.
max.
Unit
I
S
–
–
–
0.7
0.15
0.45
A
I
SM
–
V
SD
–
1.4
V
V
GS(th)
Grouping
Range of
V
GS(th)
Symbol
Limit Values
min.
max.
0.2
– 1.400
– 1.500
– 1.600
– 1.700
– 1.800
– 1.900
–
– 1.600
– 1.700
– 1.800
– 1.900
– 2.000
– 2.100
Unit
V
V
V
V
V
V
V
Test Condition
–
∆V
GS(th)
Threshold Voltage selected in groups
1)
:
V
GS(th)
F
G
A
B
C
D
1) A specific group cannot be ordered seperately.
Each reel only contains transistors from one group.
V
DS1
= 0.2 V;
V
DS2
= 3 V;
I
D
= 10
µA
Semiconductor Group
3
BSS 129
Characteristics
at
T
j
= 25 ˚C, unless otherwise specified.
Total power dissipation
P
tot
=
f
(
T
A
)
Safe operating area
I
D
=
f
(
V
DS
)
parameter:
D
= 0.01,
T
C
= 25 ˚C
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80
µs
Typ. drain-source on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
Semiconductor Group
4
BSS 129
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80
µs,
V
DS
≥
2
×
I
D
×
R
DS(on)max.
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
V
DS
≥
2
×
I
D
×
R
DS(on)max.
,
t
p
= 80
µs
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter:
I
D
= 0.014 A,
V
GS
= 0 V, (spread)
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0,
f
= 1 MHz
Semiconductor Group
5
RF/无线
