Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.5
0.15
MAX.
1500
800
11
29
45
5.0
-
0.3
UNIT
V
V
A
A
W
V
A
µs
T
hs
≤
25 ˚C
I
C
= 5.5 A; I
B
= 1.1 A
f = 64 kHz
I
Csat
= 5.5 A; f = 64 kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1
2
3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
175
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 5.5 A; I
B
= 1.1 A
I
C
= 5.5 A; I
B
= 1.1 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 5.5 A; V
CE
= 5 V
MIN.
-
-
-
7.5
800
-
-
-
5
TYP.
-
-
-
13.5
-
-
-
14
8
MAX.
1.0
2.0
1.0
-
-
5.0
1.0
-
10.3
UNIT
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
Csat
= 5.5 A; L
C
= 200
µH;
C
fb
= 4 nF;
V
CC
145 V; I
B(end)
= 0.56 A;
L
B
= 0.4
µH;
-V
BB
= -4 V; -I
BM
= 3.3 A
TYP.
MAX.
UNIT
1.5
0.15
2.0
0.3
µs
µs
TRANSISTOR
IC
DIODE
ICsat
ICsat
90 %
t
IC
IB
I B end
t
5 us
6.5 us
16 us
ts
IB
IBend
tf
10 %
t
VCE
t
- IBM
t
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
+ 150 v nominal
adjust for ICsat
10
VCEsat / V
Ths = 25 C
Ths = 85 C
BU2523AF/X
Lc
1
IC/IB = 10
IC/IB = 5
IBend
LB
T.U.T.
Cfb
0.1
-VBB
0.01
0.1
1
10
IC / A
100
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
hFE
100
VCE = 1 V
BU2523AF/X
1.2
VBEsat / V
BU2523AF/X
Ths = 25 C
Ths = 85 C
IC = 6 A
Ths = 25 C
Ths = 85 C
1.1
1
10
0.9
0.8
IC = 4.5 A
0.7
1
0.01
0.1
1
10
IC / A
100
0.6
0
1
2
3
IB / A
4
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
hFE
100
VCE = 5 V
BU2523AF/X
100
PTOT / W
BU2523AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
10
10
1
0.01
1
0.1
1
10
IC / A
100
0
0.5
1
IB / A
1.5
2
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
=5.5 A; f = 64 kHz
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
ts/tf / us
5
BU2523AF/DF/AX/DX
VCC
4
LC
3
2
IBend
VCL
LB
T.U.T.
CFB
1
-VBB
0
0
0.5
1
1.5
IB / A
2
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 5.5 A; T
j
= 85˚C; f = 64 kHz
Fig.12. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 5 V;
L
C
= 1.5 mH; V
CL
= 1450 V; L
B
= 0.3 - 2
µ
H;
C
FB
= 0.5 - 8 nF; I
B(end)
= 0.55 - 1.1 A
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
IC / A
30
BU2523
20
Area where
fails occur
10
0
100
1000
VCE / V
1500
0
20
40
60
80
Ths / C
100
120
140
Fig.10. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
mb
)
Fig.13. Reverse bias safe operating area. T
j
≤
T
jmax
10
Zth / (K/W)
BU2525AF
8
7
Ic(sat) (A)
BU2523AF/AX
1
0.5
0.2
0.1
0.05
0.02
6
5
4
3
P
D
t
p
D=
t
p
T
t
0.1
0.01
D=0
0.001
1E-06
1E-04
1E-02
t/s
2
1
T
0
1E+00
0
10
20
30
40
50
60
70
80
frequency (kHz)
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.14. I
Csat
during normal running vs. frequency of
operation for optimum performance
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
15.3 max
0.7
7.3
3.1
3.3
6.2
5.8
21.5
max
3.2
5.2 max
o
45
seating
plane
3.5
3.5 max
not tinned
15.7
min
1
2.1 max
2
3
1.2
1.0
5.45
0.7 max
0.4 M
2.0
5.45
Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
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