Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope available in
TO220AB and SOT404 . Using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK9540-100A
BUK9640-100A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 5 V
V
GS
= 10 V
MAX.
100
37
138
175
40
39
UNIT
V
A
W
˚C
mΩ
mΩ
PINNING
TO220AB & SOT404
PIN
1
2
3
DESCRIPTION
gate
drain
2
PIN CONFIGURATION
mb
tab
SYMBOL
d
g
3
SOT404
1 2 3
source
1
tab/mb drain
TO220AB
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
±V
GSM
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
t
p
≤50µS
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
100
100
10
15
37
26
149
138
175
UNIT
V
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
CONDITIONS
-
in free air
Minimum footprint, FR4
board
TYP.
-
60
50
MAX.
1.1
-
-
UNIT
K/W
K/W
K/W
December 1999
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
DS
= 100 V; V
GS
= 0 V;
V
GS
=
±10
V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A
V
GS
= 10 V; I
D
= 25 A
V
GS
= 4.5 V; I
D
= 25 A
T
j
= 175˚C
T
j
= 175˚C
MIN.
100
89
1
0.5
-
-
-
-
-
-
-
-
BUK9540-100A
BUK9640-100A
TYP.
-
-
1.5
-
-
0.05
-
2
30
-
29
31
MAX.
-
-
2.0
-
2.3
10
500
100
40
100
39
43
UNIT
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
d
L
s
PARAMETER
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal drain inductance
Internal source inductance
CONDITIONS
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
2304
222
151
20
135
125
90
4.5
3.5
2.5
7.5
MAX.
3072
266
207
30
189
189
135
-
-
-
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
V
DD
= 30 V; R
load
=1.2Ω;
V
GS
= 5 V; R
G
= 10
Ω
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 37 A; V
GS
= 0 V
I
F
= 37 A; -dI
F
/dt = 100 A/µs;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
TYP.
-
-
0.85
1.1
60
0.24
MAX.
37
149
1.2
-
-
-
UNIT
A
A
V
V
ns
µC
December 1999
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS1
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 25 A; V
DD
≤
25 V;
V
GS
= 5 V; R
GS
= 50
Ω;
T
mb
= 25 ˚C
MIN.
-
BUK9540-100A
BUK9640-100A
TYP.
-
MAX.
31
UNIT
mJ
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1000
ID/A
RDS(ON)=VDS/ID
100
tp =
1us
10us
100us
10
1ms
DC
10ms
100ms
0
20
40
60
80 100
Tmb / C
120
140
160
180
1
1
10
VDS/V
100
1000
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Normalised Current Derating
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
10
Zth/(K/W)
1
0.5
0.2
120
110
100
90
80
70
60
50
40
30
20
10
0
ID%
0.1
0.1
0.05
0.02
0.01
0
0.001
1E-07
0
20
40
60
80 100
Tmb / C
120
140
160
180
1E-05
t/s
1E-03
1E-01
1E+01
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
1
For maximum permissible repetive avanche current see fig.18.
December 1999
3
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
BUK9540-100A
BUK9640-100A
120
ID/A
100
80
60
40
20
0
0
2
4
VDS/V
6
10.0
5.0
VGS/V =
Drain current, ID (A)
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
VDS > ID X RDS(ON)
Tj = 25 C
175 C
8
10
Gate-source voltage, VGS (V)
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
50
ID/A
45
40
35
30
3.2
3.4
3.6
4.0
5.0
3.0
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
70
gfs/S
60
50
40
30
20
25
20
10
20
30
VDS/V
40
50
60
70
10
0
0
10
ID/A
20
30
40
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.9. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
a
Rds(on) normalised to 25degC
38
RDS(ON) Ohm
36
34
3
2.5
2
32
30
28
26
3
4
5
6
7
VGS/V
8
9
10
0.5
-100
-50
0
50
100
Tmb / degC
150
200
1.5
1
Fig.7. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 25 A;
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
December 1999
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
BUK9540-100A
BUK9640-100A
2.5
VGS(TO) / V
max.
5
VGS / V
4
VDS = 14V
2
typ.
1.5
min.
1
VDS = 44V
3
2
0.5
1
0
-100
0
-50
0
50
Tj / C
100
150
200
0
10
20 QG / nC 30
40
50
Fig.11. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Sub-Threshold Conduction
Fig.14. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 25 A; parameter V
DS
1E-01
Source-Drain Diode Current, IF (A)
50
45
40
35
30
25
20
Tj = 25 C
15
10
5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
VGS = 0 V
1E-02
2%
typ
98%
1E-03
175 C
1E-04
1E-05
1E-05
0
0.5
1
1.5
2
2.5
3
Source-Drain Voltage, VSDS (V)
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.15. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
WDSS%
120
5
4.5
4
Capacitance/nF
3.5
3
2.5
2
1.5
1
0.5
0
0.01
0.1
1
VDS/V
10
Coss
Crss
Ciss
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80
100
120
Tmb / C
140
160
180
100
Fig.13. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.16. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
December 1999
5
Rev 1.000
嵌入式系统
