BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
APPLICATIONS
• Very fast rectification and switching diodes
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
ORDERING INFORMATION
(Example)
DEVICE NAME
BYT54M
BYT54M
ORDERING CODE
BYT54M-TR
BYT54M-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 1.25 A
V
R
= 100 V; I
F(AV)
= 1.25 A
V
R
= 200 V; I
F(AV)
= 1.25 A
V
R
= 400 V; I
F(AV)
= 1.25 A
V
R
= 600 V; I
F(AV)
= 1.25 A
V
R
= 800 V; I
F(AV)
= 1.25 A
V
R
= 1000 V; I
F(AV)
= 1.25 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
I
F(AV)
E
R
E
R
E
R
T
j
= T
stg
VALUE
50
100
200
400
600
800
1000
30
0.75
1.25
10
10
10
- 55 to + 175
UNIT
V
V
V
V
V
V
V
A
A
A
mJ
mJ
mJ
°C
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
Peak forward surge current
Average forward current
t
p
= 10 ms, half sine wave
On PC board
l = 10 mm
I
(BR)R
= 0.4 A
BYT54J
BYT54K
BYT54M
Non repetitive reverse avalanche energy
Junction and storage temperature range
Rev. 1.8, 11-Sep-12
Document Number: 86031
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBO
L
V
F
I
R
I
R
t
rr
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
1.5
5
150
100
UNIT
V
μA
μA
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
1.4
I
FAV
- Average Forward Current (A)
100
80
60
l
40
20
T
L
= constant
0
0
949552
1.2
1.0
0.8
0.6
0.4
0.2
0
R
thJA
= 100 K/W
PCB: d = 25 mm
V
R
= V
RRM
half
sinewave
R
thJA
= 45 K/W
I = 10 mm
l
5
10
15
20
25
30
16339
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10
T
j
= 175 °C
1000
V
R
= V
RRM
1
T
j
= 25 °C
0.1
I
R
- Reverse Current (μA)
2.5
3.0
3.5
I
F
- Forward Current (A)
100
10
0.01
0.001
0
16338
0.5
1.0
1.5
2.0
1
25
16340
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 11-Sep-12
Document Number: 86031
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
450
35
V
R
= V
RRM
f = 1 MHz
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
-Limit
at 80 % V
R
P
R
-Limit
at 100 % V
R
C
D
- Diode Capacitance (pF)
400
30
25
20
15
10
5
0
0.1
1
10
100
16341
T
j
- Junction Temperature (°C)
16342
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.8, 11-Sep-12
Document Number: 86031
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
