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BYT54K-TAP

Rectifiers 800 Volt 0.75 Amp 30 Amp IFSM

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否无铅
不含铅
厂商名称
Vishay(威世)
包装说明
E-LALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.5 V
JESD-30 代码
E-LALF-W2
JESD-609代码
e2
湿度敏感等级
1
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
0.75 A
封装主体材料
GLASS
封装形状
ELLIPTICAL
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
800 V
最大反向恢复时间
0.1 µs
表面贴装
NO
技术
AVALANCHE
端子面层
Tin/Silver (Sn/Ag)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
APPLICATIONS
• Very fast rectification and switching diodes
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
ORDERING INFORMATION
(Example)
DEVICE NAME
BYT54M
BYT54M
ORDERING CODE
BYT54M-TR
BYT54M-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 1.25 A
V
R
= 100 V; I
F(AV)
= 1.25 A
V
R
= 200 V; I
F(AV)
= 1.25 A
V
R
= 400 V; I
F(AV)
= 1.25 A
V
R
= 600 V; I
F(AV)
= 1.25 A
V
R
= 800 V; I
F(AV)
= 1.25 A
V
R
= 1000 V; I
F(AV)
= 1.25 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
I
F(AV)
E
R
E
R
E
R
T
j
= T
stg
VALUE
50
100
200
400
600
800
1000
30
0.75
1.25
10
10
10
- 55 to + 175
UNIT
V
V
V
V
V
V
V
A
A
A
mJ
mJ
mJ
°C
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
Peak forward surge current
Average forward current
t
p
= 10 ms, half sine wave
On PC board
l = 10 mm
I
(BR)R
= 0.4 A
BYT54J
BYT54K
BYT54M
Non repetitive reverse avalanche energy
Junction and storage temperature range
Rev. 1.8, 11-Sep-12
Document Number: 86031
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBO
L
V
F
I
R
I
R
t
rr
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
1.5
5
150
100
UNIT
V
μA
μA
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
1.4
I
FAV
- Average Forward Current (A)
100
80
60
l
40
20
T
L
= constant
0
0
949552
1.2
1.0
0.8
0.6
0.4
0.2
0
R
thJA
= 100 K/W
PCB: d = 25 mm
V
R
= V
RRM
half
sinewave
R
thJA
= 45 K/W
I = 10 mm
l
5
10
15
20
25
30
16339
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10
T
j
= 175 °C
1000
V
R
= V
RRM
1
T
j
= 25 °C
0.1
I
R
- Reverse Current (μA)
2.5
3.0
3.5
I
F
- Forward Current (A)
100
10
0.01
0.001
0
16338
0.5
1.0
1.5
2.0
1
25
16340
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 11-Sep-12
Document Number: 86031
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
450
35
V
R
= V
RRM
f = 1 MHz
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
-Limit
at 80 % V
R
P
R
-Limit
at 100 % V
R
C
D
- Diode Capacitance (pF)
400
30
25
20
15
10
5
0
0.1
1
10
100
16341
T
j
- Junction Temperature (°C)
16342
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.8, 11-Sep-12
Document Number: 86031
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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参数对比
与BYT54K-TAP相近的元器件有:BYT54B-TAP、BYT54G-TR。描述及对比如下:
型号 BYT54K-TAP BYT54B-TAP BYT54G-TR
描述 Rectifiers 800 Volt 0.75 Amp 30 Amp IFSM Rectifiers 100 Volt 0.75 Amp 30 Amp IFSM Rectifiers 400 Volt 0.75 Amp 30 Amp IFSM
是否无铅 不含铅 不含铅 不含铅
包装说明 E-LALF-W2 HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code unknown not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.5 V 1.5 V 1.5 V
JESD-30 代码 E-LALF-W2 E-LALF-W2 E-LALF-W2
JESD-609代码 e2 e2 e2
湿度敏感等级 1 1 1
最大非重复峰值正向电流 30 A 30 A 30 A
元件数量 1 1 1
端子数量 2 2 2
最高工作温度 175 °C 175 °C 175 °C
最低工作温度 -55 °C -55 °C -55 °C
最大输出电流 0.75 A 0.75 A 0.75 A
封装主体材料 GLASS GLASS GLASS
封装形状 ELLIPTICAL ELLIPTICAL ELLIPTICAL
封装形式 LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) NOT SPECIFIED 260 260
最大重复峰值反向电压 800 V 100 V 400 V
最大反向恢复时间 0.1 µs 0.1 µs 0.1 µs
表面贴装 NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE
端子面层 Tin/Silver (Sn/Ag) Tin/Silver (Sn96.5Ag3.5) Tin/Silver (Sn96.5Ag3.5)
端子形式 WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 30
厂商名称 Vishay(威世) Vishay(威世) -
是否Rohs认证 - 符合 符合
Factory Lead Time - 12 weeks 12 weeks
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