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CCD42-40-0-388

CCD Sensor, 2048 Horiz pixels, 2048 Vert pixels, 450mV, Rectangular, Through Hole Mount

器件类别:传感器    传感器/换能器   

厂商名称:e2v technologies

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器件参数
参数名称
属性值
厂商名称
e2v technologies
Reach Compliance Code
compliant
其他特性
SENSITIVITY 4.5 MICRO VOLT PER ELECTRON
阵列类型
FULL FRAME
主体宽度
37 mm
主体高度
3.5 mm
主体长度或直径
51.72 mm
数据速率
3 Mbps
水平像素
2048
外壳
CERAMIC
安装特点
THROUGH HOLE MOUNT
输出范围
450mV
输出类型
ANALOG VOLTAGE
封装形状/形式
RECTANGULAR
像素大小
13.5X13.5 µm
传感器/换能器类型
IMAGE SENSOR,CCD
光谱响应 (nm)
420-1060
表面贴装
NO
端接类型
SOLDER
垂直像素
2048
Base Number Matches
1
文档预览
CCD42-40 Front Illuminated AIMO Ceramic Compact Pack
Large Area Sensor for Scientific Applications
FEATURES
*
*
*
*
*
*
*
2048 x 2048 x 13.5
mm
pixels
Advanced Inverted Mode Operation (AIMO)
Low Noise Output Amplifier
Dual Responsivity Output
Full-frame Architecture
Gated Dump Drain on Output Register
Compact Footprint Ceramic Package
INTRODUCTION
This version of the CCD42 family of CCD Sensors has full-frame
architecture, which in combination with an extremely low noise
amplifier, makes the device well suited for use in general
scientific imaging. The advanced inverted mode operation
(AIMO) gives a 100 times reduction in dark current with
minimal full well reduction and is suitable for use at Peltier
temperatures.
The output amplifier is designed to give excellent noise levels at
low pixel rates and can match the noise performance of most
conventional science CCDs at pixel rates as high as 3 MHz.
There are two low noise amplifiers in the readout register, one
at each end. Charge can be made to transfer through either or
both amplifiers by making the appropriate R1 connections.
The readout register has a gate controlled dump drain to allow
fast dumping of unwanted data.
The register is designed to accommodate four image pixels of
charge and a summing well is provided, capable of holding six
image pixels of charge. The output amplifier has a feature
(switchable OG2) to enable the responsivity to be reduced,
allowing the reading of such large charge packets.
GENERAL DATA
Format
Image area . . . .
Active pixels:
horizontal . . . .
vertical . . . . .
serial overscan pixels
Pixel size . . . . .
. . . . . . .
.
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27.6 x 27.6 mm
. . . . . 2048
. . . 2048 + 4
.
50 at each end
.
13.5 x 13.5
mm
Number of output amplifiers
. . . . . . . . . . 2
The device has a 100% fill factor for maximum sensitivity.
Spectral range . . . . . . . . . . . 420 - 1060 nm
e2v technologies limited, Waterhouse Lane, Chelmsford, Essex CM1 2QU England Telephone: +44 (0)1245 493493 Facsimile: +44 (0)1245 492492
e-mail: enquiries@e2vtechnologies.com Internet: www.e2vtechnologies.com
Holding Company: e2v holdings limited
e2v technologies inc. 4 Westchester Plaza, PO Box 1482, Elmsford, NY10523-1482 USA Telephone: (914) 592-6050 Facsimile: (914) 592-5148
e-mail: enquiries@e2vtechnologies.us
#
e2v technologies limited 2003
A1A-CCD42-40 Front Illuminated AIMO Ceramic Compact Pack Issue 4, April 2003
527/5890
PERFORMANCE LIMITS
Min
Peak charge storage (see note 1)
Peak output voltage (unbinned)
Dark signal at 293 K (see note 2)
Charge transfer efficiency (see note 3):
parallel
serial
Output amplifier responsivity:
normal mode
high signal mode
Readout noise at 253 K (see note 4)
Readout frequency (see note 5)
Line transfer period
Output node capacity (see note 6)
80k
99.999
99.999
3.0
20
Typical
100k
450
100
99.9999
99.9993
4.5
1.5
3.0
20
40
1,000,000
Max
200
6.0
4.0
3000
7
e
7
/pixel
mV
e /pixel/s
%
%
mV/e
7
mV/e
7
rms e
7
kHz
ms
e
7
NOTES
1. Signal level at which resolution begins to degrade.
2. The typical average (background) dark signal at any temperature T (kelvin) between 230 K and 300 K is given by:
Q
d
/Q
do
= 1.4 x 10
6
T
3
e
79080/T
where Q
do
is the dark current at 293 K. Below 230 K additional dark current components with a weaker temperature dependence
may become significant.
3. CTE is measured for a complete 3-phase clock triplet.
4. Measured using correlated double sampling. Noise specification applies at 20 kHz.
5. Readout above 3000 kHz can be achieved but performance to the parameters given cannot be guaranteed.
6. With output circuit configured in low responsivity/high capacity mode (OG2 high).
CCD42-40 Front Illuminated AIMO Ceramic Compact Pack, page 2
#
e2v technologies
TYPICAL OPERATING CONDITIONS
Ref
SS
I11
I12
I13
R11(L)
R12(L)
R11(R)
R12(R)
R13
1R
1SW
DG (see note 9)
OG1
DD
OG2
OD(L)
OD(R)
OS(L)
OS(R)
RD(L)
RD(R)
Pin No.
1, 12, 13, 24
17
18
16
20
19
22
23
21
14
15
7
2
6
11
4
9
3
10
5
8
Typical Voltage
9.5 V
12 V
12 V
12 V
11 V
11 V
11 V
11 V
11 V
12 V
11 V
0V
3V
24 V
see note 7
29 V
29 V
see note 8
see note 8
17 V
17 V
NOTES
7. OG2 = OG1 + 1 V - normal low noise mode or OG2 = 20 V
- low responsivity/increased charge handling mode.
8. OS = 3 to 5 V below OD typically. Use 3 – 5 mA current
source or 5 – 10 kW load.
9. Non-charge dumping level is shown. For charge dumping,
DG should be pulsed to 12
+
2 V.
10. Readout register clock pulse low levels +1 V; other clock
low levels 0
+
0.5 V.
11. With the R1 connections shown, this device will operate
through both outputs. In order to operate from the left-
hand output only, R11(R) and R12(R) should be reversed.
BLEMISH SPECIFICATION
Pixels where charge is temporarily held.
Traps are counted if they have a capacity
greater than 200 e
7
at 253 K.
Black spots
Are counted when they have a signal level
of less than 90% of the local mean at a
signal level of approximately half full-well.
White spots
Are counted when they have a generation
rate 125 times the specified maximum dark
signal generation rate (measured between
253 and 293 K). The typical temperature
dependence of white spot defects is:
Q
d
/Q
d0
= 122T
3
e
76400/T
Column defects
A column that contains at least 21 white or
21 black defects.
GRADE
Column defects
Black spots
Traps
4200
e
7
White spots
Grade 5
0
0
50
10
50
1
1
75
20
75
2
4
100
30
100
Traps
Nomenclature
SS . . .
LS . . .
I11/2/3 .
R11/2/3 .
1R
. . .
1SW
. .
DG . . .
OG1, OG2
DD . . .
OD . . .
OS . . .
RD . . .
.
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. .
Local
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. . . . . Substrate
substrate (connect to SS)
. .
Image area clocks
.
Serial register clocks
. . . .
Reset clock
. . .
Summing well
. . Register dump gate
. . . . Output gates
. . . .
Dump drain
. . . . Output drain
. . .
Output source
. . . .
Reset drain
Functional devices for set-up purposes only.
Part Reference
CCD42-40-*-388
*= grade,
AIMO, frontside, ceramic compact package.
Other variants of the CCD42-40 available are back illuminated format and non-inverted mode operation (NIMO). In common with all
e2v technologies CCD Sensors, the front illuminated CCD42-40 is available with a fibre-optic window or taper, or with a phosphor
coating. Sensors are normally supplied with a temporary glass window. The CCD42-40 is also available in a PGA metal pack or on a
metal 3-side buttable package.
#
e2v technologies
CCD42-40 Front Illuminated AIMO Ceramic Compact Pack, page 3
OUTLINE (All dimensions in millimetres; dimensions without limits are nominal)
8010
3
51.72
+
0.50
"
3
25.86
+
0.25
"
(C OF PACKAGE)
L
24 PINS
1
0.46
+
0.05
PIN 12
3
3
37.00
+
0.35
3.50
+
0.35
"
"
3
3
Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use
thereof and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond that set out in its standard
conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein.
CCD42-40 Front Illuminated AIMO Ceramic Compact Pack, page 4
Printed in England
3
"
PIN 13
3
28.05
27.94
+
0.13
(11 x 2.54)
"
"
PIN 24
3
PIN 1
IDENTIFIER
"
3
3
26.12
+
0.40
"
(C OF IMAGE AREA)
L
0.67
+
0.05
"3
7.00
+
0.13
13.89
3
"
IMAGE PLANE
41.50
+
0.10
3
"
2.00
+
0.10
45.72
+
0.20
3
"
#
e2v technologies
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参数对比
与CCD42-40-0-388相近的元器件有:CCD42-40-2-388、CCD42-40-1-388。描述及对比如下:
型号 CCD42-40-0-388 CCD42-40-2-388 CCD42-40-1-388
描述 CCD Sensor, 2048 Horiz pixels, 2048 Vert pixels, 450mV, Rectangular, Through Hole Mount CCD Sensor, 2048 Horiz pixels, 2048 Vert pixels, 450mV, Rectangular, Through Hole Mount CCD Sensor, 2048 Horiz pixels, 2048 Vert pixels, 450mV, Rectangular, Through Hole Mount
厂商名称 e2v technologies e2v technologies e2v technologies
Reach Compliance Code compliant compliant compliant
其他特性 SENSITIVITY 4.5 MICRO VOLT PER ELECTRON SENSITIVITY 4.5 MICRO VOLT PER ELECTRON SENSITIVITY 4.5 MICRO VOLT PER ELECTRON
阵列类型 FULL FRAME FULL FRAME FULL FRAME
主体宽度 37 mm 37 mm 37 mm
主体高度 3.5 mm 3.5 mm 3.5 mm
主体长度或直径 51.72 mm 51.72 mm 51.72 mm
数据速率 3 Mbps 3 Mbps 3 Mbps
水平像素 2048 2048 2048
外壳 CERAMIC CERAMIC CERAMIC
安装特点 THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
输出范围 450mV 450mV 450mV
输出类型 ANALOG VOLTAGE ANALOG VOLTAGE ANALOG VOLTAGE
封装形状/形式 RECTANGULAR RECTANGULAR RECTANGULAR
像素大小 13.5X13.5 µm 13.5X13.5 µm 13.5X13.5 µm
传感器/换能器类型 IMAGE SENSOR,CCD IMAGE SENSOR,CCD IMAGE SENSOR,CCD
光谱响应 (nm) 420-1060 420-1060 420-1060
表面贴装 NO NO NO
端接类型 SOLDER SOLDER SOLDER
垂直像素 2048 2048 2048
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