GaAs Pseudomorphic HEMT Transistor
July 2008 - Rev 19-Jul-08
CF003-03
Features
Low Noise Figure 1 dB @ 12 GHz
High Gain: 10 dB at 12 GHz
P1dB Power: 20 dBm
Wafer Qualification Procedure
Customer Wafer Selection Available
General Description
Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
sub-half-micron gate length GaAs device with Silicon Nitride
passivation. The CF003-03 provides low noise figure and wide
dynamic range up to 26 GHz. It is suitable for narrow and wide
band amplifiers. Superior gain makes this model useful for
high gain feedback amplifiers. Its rugged construction allows
it to withstand the same input power as conventional MESFET.
The CF003-03 is available in chip form and is suitable for
airborne, shipboard and ground-based equipment. The
devices are 100% DC tested and every wafer is qualified based
on sample RF and reliability testing. Screening includes
MIL-STD-750 Class B, Class S and commercial screening. These
devices are also available in packaged form. Please consult
the CFB0303-B, CFA0303-A datasheets or contact the factory
for further information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 4
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
GaAs Pseudomorphic HEMT Transistor
July 2008 - Rev 19-Jul-08
CF003-03
CF003-03
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 4
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
GaAs Pseudomorphic HEMT Transistor
July 2008 - Rev 19-Jul-08
CF003-03
CF003-03
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 4
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
GaAs Pseudomorphic HEMT Transistor
July 2008 - Rev 19-Jul-08
CF003-03
Handling and Assembly Information
CAUTION!
- Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy
- Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD
- Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attach:
Conductive epoxy or preform die attach is recom-
mended. For preform die attach: Preform: AuSn (80% Au, 20%
Sn); Stage Temperature: 290 ºC, +/-5 ºC; Handling Tool: Tweezers;
Time: 1 min or less.
Wire Bonding:
Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding: Stage
Temperature: 250 ºC ; Bond Tip Temperature: 150 ºC; Bonding
Tip Pressure: 18 to 40 gms depending on size of wire.
RoHS Compliant Parts
- All Mimix products are RoHS compliant unless otherwise specified.
Ordering Information
Part Number for Ordering
CF003-03-000X
Description
Where “X” is RoHS compliant die packed in “V” - vacuum release gel packs or
W” - waffle trays
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 4
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
