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CFA0101-G1

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMATIC PACKAGE-4

器件类别:分立半导体    晶体管   

厂商名称:Mimix Broadband (MACOM)

厂商官网:http://www.macom.com

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器件参数
参数名称
属性值
厂商名称
Mimix Broadband (MACOM)
包装说明
DISK BUTTON, O-CRDB-F4
针数
4
Reach Compliance Code
unknown
其他特性
HIGH RELIABILITY
外壳连接
SOURCE
配置
SINGLE
最小漏源击穿电压
8 V
FET 技术
JUNCTION
最高频带
KU BAND
JESD-30 代码
O-CRDB-F4
元件数量
1
端子数量
4
工作模式
DEPLETION MODE
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
极性/信道类型
N-CHANNEL
最小功率增益 (Gp)
9 dB
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
RADIAL
晶体管元件材料
GALLIUM ARSENIDE
文档预览
General Purpose
GaAs FETs
July 2006 - Rev 31-Jul-06
Features
High Gain
19 dBm Power Output
Ion Implanted Material
70 Mil Hermetic Package
CFA0101
Applications
Satellites
Point-to-Point Radios
Commercial Communications
Defense Electronics
General Description
The CFA0101-G series is a family of high-gain FETs ideally suited for high performance gain block applications. This
family of devices is assembled in an industry standard 70 mil hermetic package. This family of high reliability devices is
ideally suited for operation-critical applications where reliability and performance are required.
Typical Noise Parameters
(Vds=6V, Ids=40 mA)
Freq
(GHz)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
NF
opt
0.94
1.18
1.46
1.82
2.35
2.87
3.29
3.70
4.00
G
A
Gamma Opt
(dB) Mag Ang
21.5 0.81
39
17.6 0.66
78
15.3 0.56 115
13.7 0.51 151
12.5 0.48 -175
11.6 0.48 -140
10.9 0.50 -105
10.3 0.51
-69
9.9
0.53
-32
Rn/50
1.57
0.67
0.19
0.04
0.14
0.42
0.78
1.16
1.46
Frequency
(GHz)
12.0
12.0
2.0
10.0
18.0
12.0
Absolute Maximum Ratings
Drain-Source Voltage (Vds)
Gate-Source Voltage (Vgs)
Drain Current (Ids)
Continuous Dissipation (Pt)
RF Power In (Pin)
Channel Temperature (Tch)
Storage Temperature (Tstg)
8V
-5 V
Idss
800 mW
+17 dBm
175 ºC
-65 ºC to +175 ºC
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Bias
Parameter
P1dB
GL
IS211
2
NFopt
gm
Idss
Vp
BVgd
Rth
Vds (V)
6.0
6.0
6.0
6.0
Vds = 3.0V
Vds = 3.0V
Vds = 3.0V
Igd = 100 uA
Ids (mA)
40.0
40.0
40.0
40.0
Vgs = 0V
Vgs = 0V
Ids = 1 mA
Units
dBm
dB
dB
dB
dB
dB
mS
mA
Volts
Volts
ºC/W
Grade
G1
G2
G3
G1
G2
G3
Min
19.0
18.0
17.0
9.0
9.0
8.0
Typ
19.5
18.5
17.5
9.5
9.5
8.5
14.0
8.7
5.1
2.8
60.0
60.0
-1.3
-8.0
250
Max
-
-
-
-
-
-
40.0
-0.7
-5.5
120.0
-2.5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 2
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
General Purpose
GaAs FETs
July 2006 - Rev 31-Jul-06
Typical Performance (TA = 25ºC)
CFA0101
Typical Scattering Parameters (TA = 25ºC,Vds = 3V, Ids = 15mA)
Frequency
S11
(GHz)
(Mag) (Ang)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.95
0.84
0.75
0.63
0.61
0.59
0.60
0.61
0.57
-37
-80
-114
-157
165
135
94
71
41
S21
(dB) (Mag) (Ang)
14.0
11.9
10.4
9.9
8.7
8.0
7.1
5.9
5.1
5.01
3.94
3.31
3.13
2.72
2.51
2.26
1.97
1.80
145
106
75
44
12
-16
-48
-79
-111
S12
(dB) (Mag) (Ang)
-32.4
-27.4
-25.6
-24.7
-24.2
-23.4
-22.1
-21.4
-21.7
0.02
0.04
0.05
0.06
0.06
0.07
0.08
0.09
0.08
59
40
26
12
-3
-4
-20
-38
-60
S22
MSG
(Mag) (Ang) (dB)
0.55
0.58
0.58
0.51
0.41
0.50
0.49
0.62
0.68
-17
-45
-64
-76
-113
-138
-167
157
139
23.2
19.7
18.0
17.3
16.5
15.7
14.6
13.7
13.4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 2
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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参数对比
与CFA0101-G1相近的元器件有:CFA0101-G2、CFA0101-G3。描述及对比如下:
型号 CFA0101-G1 CFA0101-G2 CFA0101-G3
描述 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMATIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMATIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMATIC PACKAGE-4
厂商名称 Mimix Broadband (MACOM) Mimix Broadband (MACOM) Mimix Broadband (MACOM)
包装说明 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4
针数 4 4 4
Reach Compliance Code unknown unknown unknown
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 SOURCE SOURCE SOURCE
配置 SINGLE SINGLE SINGLE
最小漏源击穿电压 8 V 8 V 8 V
FET 技术 JUNCTION JUNCTION JUNCTION
最高频带 KU BAND KU BAND KU BAND
JESD-30 代码 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
元件数量 1 1 1
端子数量 4 4 4
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
最小功率增益 (Gp) 9 dB 9 dB 8 dB
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 FLAT FLAT FLAT
端子位置 RADIAL RADIAL RADIAL
晶体管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
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