CFB0101-G1

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

器件类别：分立半导体晶体管

厂商名称：Mimix Broadband （MACOM）

厂商官网：http://www.macom.com

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器件参数

参数名称

属性值

厂商名称

Mimix Broadband （MACOM）

包装说明

DISK BUTTON, O-CRDB-F4

Reach Compliance Code

unknown

外壳连接

SOURCE

配置

SINGLE

最小漏源击穿电压

8 V

FET 技术

JUNCTION

最高频带

KU BAND

JESD-30 代码

O-CRDB-F4

元件数量

端子数量

工作模式

DEPLETION MODE

封装主体材料

CERAMIC, METAL-SEALED COFIRED

封装形状

ROUND

封装形式

DISK BUTTON

极性/信道类型

N-CHANNEL

最小功率增益 (Gp)

9 dB

认证状态

Not Qualified

表面贴装

YES

端子形式

FLAT

端子位置

RADIAL

晶体管元件材料

GALLIUM ARSENIDE

文档预览

General Purpose GaAs FETs

August 2006 - Rev 03-Aug-06

CFB0101 Series

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Page 1 of 2

Characteristic Data and Specifications are subject to change without notice.

Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

General Purpose GaAs FETs

August 2006 - Rev 03-Aug-06

CFB0101 Series

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Page 2 of 2

Characteristic Data and Specifications are subject to change without notice.

Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

参数对比

与CFB0101-G1相近的元器件有：CFB0101-G2、CFB0101-G3、CFB0101-B。描述及对比如下：

型号	CFB0101-G1	CFB0101-G2	CFB0101-G3	CFB0101-B
描述	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET	Transistor,
包装说明	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	,
Reach Compliance Code	unknown	unknown	unknown	unknown
外壳连接	SOURCE	SOURCE	SOURCE	-
配置	SINGLE	SINGLE	SINGLE	-
最小漏源击穿电压	8 V	8 V	8 V	-
FET 技术	JUNCTION	JUNCTION	JUNCTION	-
最高频带	KU BAND	KU BAND	KU BAND	-
JESD-30 代码	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	-
元件数量	1	1	1	-
端子数量	4	4	4	-
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	-
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-
封装形状	ROUND	ROUND	ROUND	-
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	-
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
最小功率增益 (Gp)	9 dB	9 dB	8 dB	-
认证状态	Not Qualified	Not Qualified	Not Qualified	-
表面贴装	YES	YES	YES	-
端子形式	FLAT	FLAT	FLAT	-
端子位置	RADIAL	RADIAL	RADIAL	-
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	-
Base Number Matches	-	1	1	1