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CFY67-06ES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4

器件类别：分立半导体    晶体管   

厂商名称：Infineon(英飞凌)

厂商官网：http://www.infineon.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Infineon(英飞凌)
包装说明
DISK BUTTON, O-CRDB-F4
针数
4
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW NOISE
外壳连接
SOURCE
配置
SINGLE
最小漏源击穿电压
3.5 V
最大漏极电流 (Abs) (ID)
0.06 A
最大漏极电流 (ID)
0.06 A
FET 技术
HIGH ELECTRON MOBILITY
最高频带
K BAND
JESD-30 代码
O-CRDB-F4
JESD-609代码
e3
元件数量
1
端子数量
4
工作模式
DEPLETION MODE
最高工作温度
150 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
极性/信道类型
N-CHANNEL
功耗环境最大值
0.2 W
最小功率增益 (Gp)
11.5 dB
认证状态
Not Qualified
参考标准
ESA/SCC 5613/004
表面贴装
YES
端子面层
MATTE TIN
端子形式
FLAT
端子位置
RADIAL
晶体管应用
AMPLIFIER
晶体管元件材料
GALLIUM ARSENIDE
Base Number Matches
1
文档预览
CFY67
HiRel
K-Band GaAs Super Low Noise HEMT
•
HiRel
Discrete and Microwave
Semiconductor
4
3
•
•
•
•
•
•
Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figure, high associated gain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
1
2
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
1
2
S
3
D
4
S
Package
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
-
see below
G
Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1699
on request
on request
Q62702F1699
(see order instructions for ordering example)
Semiconductor Group
1 of 9
Draft D, Jul. 98
CFY67
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band
Junction temperature
Storage temperature range
Total power dissipation
Soldering temperature
Thermal Resistance
Junction-soldering point
2)
1)
Symbol
V
DS
V
DG
V
GS
I
D
I
G
P
RF,in
T
J
T
stg
P
tot
T
sol
Values
3.5
4.5
- 3... + 0.5
60
2
+ 10
150
- 65... + 150
200
230
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
3)
R
th JS
≤
515 (tbc.)
K/W
Notes.:
1) For V
DS
≤
2 V. For V
DS
> 2 V, derating is required.
2) At T
S
= + 47 °C. For T
S
> + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered unt il 3 minutes have
elapsed.
Semiconductor Group
2 of 9
Draft D, Jul. 98
CFY67
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
min.
Values
typ.
max.
Unit
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
Gate threshold voltage
V
DS
= 2 V, I
D
= 1 mA
Drain current at pinch-off
V
DS
= 1.5 V, V
GS
= - 3 V
Gate leakage current at pinch-off
V
DS
= 1.5 V, V
GS
= - 3 V
Transconductance
V
DS
= 2 V, I
D
= 15 mA
Gate leakage current at operation
V
DS
= 2 V, I
D
= 15 mA
Thermal resistance
junction to soldering point
I
Dss
-V
Gth
I
Dp
15
30
60
mA
0.2
0.7
2.0
V
-
< 50
-
µA
-I
Gp
-
< 50
200
µA
g
m15
50
65
-
mS
-I
G15
-
< 0.5
2
µA
R
th JS
-
450
-
K/W
Semiconductor Group
3 of 9
Draft D, Jul. 98
CFY67
Electrical Characteristics
(continued)
Parameter
Symbol
min.
Values
typ.
max.
Unit
AC Characteristics
Noise figure
1)
V
DS
= 2 V, I
D
= 15 mA, f = 12 GHz
CFY67-06
CFY67-08, -08P
CFY67-10, 10P
Associated gain.
1)
V
DS
= 2 V, I
D
= 15 mA, f = 12 GHz
CFY67-06
CFY67-08, -08P
CFY67-10, 10P
Output power at 1 dB gain compression
V
DS
= 2 V, I
D
= 20 mA, f = 12 GHz
CFY67-06, -08, -10
CFY67-08P, -10P
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
2)
NF
dB
-
-
-
G
a
11.5
11.0
10.5
P
1dB
-
10.0
0.5
0.7
0.9
0.6
0.8
1.0
dB
12.5
11.5
11.0
-
-
-
dBm
11.0
11.0
-
-
Semiconductor Group
4 of 9
Draft D, Jul. 98
CFY67
Typical Common Source S-Parameters
f
[GHz]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
|S11|
[magn]
0,963
0,938
0,913
0,889
0,865
0,844
0,823
0,800
0,779
0,761
0,743
0,725
0,708
0,690
0,673
0,656
0,640
0,625
0,611
0,597
0,586
0,576
0,564
0,554
0,547
0,536
0,529
0,522
0,517
0,510
0,505
0,502
0,499
0,498
0,498
0,498
<S11
[angle]
-15
-23
-33
-42
-52
-62
-72
-81
-91
-100
-109
-117
-125
-132
-139
-146
-153
-160
-168
-175
177
169
161
154
146
139
131
124
116
108
99
91
82
74
68
62
CFY67-08: V
DS
= 2 V, I
D
= 15 mA, Z
o
= 50
Ω
|S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S
2 1
/S
1 2
MAG
[magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB]
[dB]
5,315 165 0,0111 74
0,655
-14
0,40
26,8
5,182 159 0,0225 68
0,639
-18
0,39
23,6
5,060 150 0,0317 62
0,625
-23
0,42
22,0
4,940 142 0,0411 57
0,611
-28
0,43
20,8
4,824 133 0,0509 53
0,596
-35
0,43
19,8
4,715 124 0,0585 46
0,582
-41
0,45
19,1
4,591 115 0,0650 41
0,567
-47
0,47
18,5
4,450 107 0,0714 36
0,552
-53
0,50
17,9
4,319
99 0,0768 31
0,534
-60
0,52
17,5
4,183
91 0,0811 25
0,520
-66
0,54
17,1
4,043
83 0,0850 20
0,500
-72
0,58
16,8
3,906
75 0,0885 15
0,490
-77
0,60
16,4
3,769
68 0,0917 11
0,477
-83
0,63
16,1
3,640
61 0,0942
7
0,467
-88
0,67
15,9
3,529
54 0,0962
3
0,455
-93
0,71
15,6
3,427
48 0,0978
-1
0,442
-97
0,76
15,4
3,344
41 0,0998
-5
0,430 -101
0,79
15,3
3,271
34 0,1010
-9
0,417 -104
0,84
15,1
3,202
28 0,1027 -12
0,406 -108
0,87
14,9
3,143
21 0,1033 -16
0,393 -113
0,91
14,8
3,089
15 0,1044 -20
0,381 -118
0,94
14,7
3,041
8
0,1056 -24
0,370 -123
0,96
14,6
3,002
1
0,1068 -28
0,358 -129
0,98
14,5
2,960
-5
0,1070 -32
0,351 -134
1,01
14,4
13,8
2,923
-12 0,1076 -36
0,343 -140
1,03
14,3
13,3
2,886
-19 0,1076 -41
0,336 -146
1,06
14,3
12,7
2,848
-26 0,1081 -45
0,330 -151
1,09
14,2
12,4
2,815
-33 0,1087 -50
0,325 -156
1,11
14,1
12,1
2,787
-40 0,1087 -55
0,320 -161
1,13
14,1
11,9
2,765
-46 0,1093 -60
0,315 -167
1,14
14,0
11,7
2,751
-54 0,1090 -65
0,311 -172
1,16
14,0
11,6
2,735
-61 0,1090 -71
0,305 -177
1,18
14,0
11,4
2,719
-68 0,1091 -77
0,301 177
1,19
14,0
11,3
2,722
-75 0,1097 -82
0,297 172
1,19
13,9
11,3
2,741
-80 0,1103 -87
0,294 168
1,18
14,0
11,4
2,760
-84 0,1107 -90
0,290 165
1,17
14,0
11,5
Semiconductor Group
5 of 9
Draft D, Jul. 98
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参数对比
与CFY67-06ES相近的元器件有：CFY67-06P、CFY67-08PS、CFY67-08H、CFY67-08PES、CFY67-08PP、CFY67-08ES、CFY67-06S、CFY67-06H、CFY67-08PH。描述及对比如下：
型号 CFY67-06ES CFY67-06P CFY67-08PS CFY67-08H CFY67-08PES CFY67-08PP CFY67-08ES CFY67-06S CFY67-06H CFY67-08PH
描述 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
包装说明 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-XRDB-F4
针数 4 4 4 4 4 4 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
外壳连接 SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V
最大漏极电流 (Abs) (ID) 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A
最大漏极电流 (ID) 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A
FET 技术 HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY
最高频带 K BAND K BAND K BAND K BAND K BAND K BAND K BAND K BAND K BAND K BAND
JESD-30 代码 O-CRDB-F4 O-CRDB-F4 O-XRDB-F4 O-XRDB-F4 O-XRDB-F4 O-XRDB-F4 O-XRDB-F4 O-CRDB-F4 O-CRDB-F4 O-XRDB-F4
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e3 e3
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4 4 4 4
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
功耗环境最大值 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
最小功率增益 (Gp) 11.5 dB 11.5 dB 11 dB 11 dB 11 dB 11 dB 11 dB 11.5 dB 11.5 dB 11 dB
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
参考标准 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004 ESA/SCC 5613/004
表面贴装 YES YES YES YES YES YES YES YES YES YES
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 1 1 1 1 1 1 1 1 1 1
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器件捷径:
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