COM140T COM340T
COM240T COM440T
(COTS) COMMERCIAL OFF-THE-SHELF
POWER MOSFETS IN TO-257AA PA C K A G E
100V Thru 500V, Up To 14 Amp, N-Channel
M O S F E Ts In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
DS(on)
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOS-
FET and packaging technology. They are ideally suited for Military requirements
where small size, high performance and high reliability are required, and in appli-
cations such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
COM140T
COM240T
COM340T
COM440T
@ 25°C
V
D S
100V
200V
400V
500V
R
DS(on)
.12
.21
.59
.90
I
D(MAX)
14A
14A
10A
7A
3.1
S C H E M ATIC
CONNECTION DIAGRAM
1. GATE
2. DRAIN
3. SOURCE
1
2 3
8 09 R0
31 - 1
.
3.1
ELECTRICAL CHARACTERISTICS:
STATIC
Min. Typ. Max. Units Test Conditions
100
20
.
40
.
100
-100
01
.
02
.
Current
1
14
1.40 1.73
.2
1
.2
2
0.25
10
.
V
V
nA
nA
mA
mA
A
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S
,
D
= 250 mA
I
V
G S
= 20 V
V
G S
= - 20 V
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
V
G S
= 1 V I
D
= 15 A,
0 ,
T
C
= 125 C
V
G S
= 1 V I
D
= 15 A
0 ,
V
D S
2 V
DS(on)
,V
G S
= 10 V
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.41
V
G S
= 1 V I
D
= 10 A,
0 ,
T
C
= 125 C
0.21
V
G S
= 1 V I
D
= 10 A
0 ,
Current
1
14
18
.
21
.
A
V
V
DS(on)
Static Drain-Source On-State
V
G S
= 1 V I
D
= 15 A
0 ,
V
DS(on)
Static Drain-Source On-State
V
GS(th)
I
GSSF
I
SSR
G
I
SS
D
Parameter
B V
D S S
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
01
.
02
.
20
.
40
.
100
- 100
0.25
10
.
V
nA
nA
mA
mA
COM140T - COM440T
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter
B V
D S S
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
SSR
G
I
SS
D
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
T
C
= 25° unless otherwise noted
T
C
= 25° unless otherwise noted
P/N COM140T
P/N COM240T
Min. Typ. Max. Units Test Conditions
200
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S,
I = 250 mA
D
V
G S
= 20 V
V
G S
= - 20 V
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
V
D S
2 V
DS(on)
,V
G S
= 10 V
V
G S
= 1 V I
D
= 10 A
0 ,
g
f
s
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10
1275
550
160
16
19
42
24
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
2 V
DS(on)
,
D
= 15 A
I
g
f
s
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
60
.
1000
250
100
17
52
36
30
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 3 V I
D
@5 A
0 ,
R
g
= 5 W ,V
G S
=10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
V
S D
t
r
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
200
- 20
.
V
ns
- 108
A
-2
7
A
Modified MOSPOWER
symbol showing
the integral P-N
J n t o r c i i r.
ucin etfe
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
350
-1
8
-7
2
-.
15
T
C
= 25 C I
S
= -24 A, V
G S
= 0
,
T
J
= 150 C I
F
=I
S
,
,
d
F
/ds = 100 A/ms
l
V
S D
t
r
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
( )
W
A
A
V
ns
( )
W
31 - 2
.
DYNAMIC
DYNAMIC
2 V
DS(on)
,
D
= 10 A
I
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 5 V I
D
@ 18 A
7 ,
R
g
= W ,V
G S
= 10 V
5
(MOSFET) switching times are
essentially independent of
operating temperature.
Modified MOSPOWER
symbol showing
the integral P-N
J n t o r c i i r.
ucin etfe
G
D
S
T
C
= 25 C I
S
= -18 A, V
G S
= 0
,
T
J
= 150 C I
F
=I
S
,
,
d
F
/ds = 100 A/ms
l
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter
B V
D S S
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
SSR
G
I
SS
D
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
10
25
.
01
.
02
.
20
.
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC
P/N COM440T
Parameter
B V
D S S
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
SSR
G
I
SS
D
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
45
.
32
.
01
.
02
.
20
.
T
C
= 25° unless otherwise noted
P/N COM340T
Min. Typ. Max. Units Test Conditions
400
40
.
100
-100
0.25
10
.
V
V
nA
nA
mA
mA
A
29
.
0.59
12
.
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S
,
D
= 250 mA
I
V
G S
= 20 V
V
G S
= - 20 V
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
V
D S
2 V
DS(on)
,V
G S
= 10 V
Min. Typ. Max. Units Test Conditions
500
40
.
100
- 100
0.25
10
.
V
V
nA
nA
mA
mA
A
3.52
0.90
18
.
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S,
I = 250 mA
D
V
G S
= 20 V
V
G S
= - 20 V
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
V
D S
2 V
DS(on)
,V
G S
= 10 V
V
DS(on)
Static Drain-Source On-State
V
G S
= 1 V I
D
= 5 A
0 ,
V
G S
= 1 V I
D
= 5 A
0 ,
V
G S
= 1 V I
D
= 5 A
0 ,
,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
V
G S
= 1 V I
D
= 4 A
0 ,
V
G S
= 1 V I
D
= 4 A
0 ,
V
G S
= 1 V I
D
= 4 A
0 ,
,
T
C
= 125 C
g
f
s
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward
Transductance
1
40
.
44
.
1150
165
70
17
12
45
30
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
2 V
DS(on)
,
D
= 5 A
I
g
f
s
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
40
.
48
.
1225
200
85
17
5
42
14
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 1 5 V I
D
= 5 A
7 ,
R
g
= 5 W ,V
D S
=10V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
V
S D
t
r
Continuous Source Current
(Body Diode)
Source
Current
1
Voltage
1
530
-4
0
-2
A
V
ns
(Body Diode)
Diode Forward
Reverse Recovery Time
-1
0
A
Modified MOSPOWER
symbol showing
the integral P-N
J n t o r c i i r.
ucin etfe
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
S
Continuous Source Current
(Body Diode)
Source
Current
1
Voltage
1
700
-8
-3
2
-2
(Body Diode)
V
S D
t
r
Diode Forward
V
ns
Reverse Recovery Time
T
C
= 25 C I
S
= -10 A, V
G S
= 0
,
T
J
= 150 C I
F
=I
S
,
,
d
F
/ds = 100 A/ms
l
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
( )
W
A
A
( )
W
31 - 2
.
DYNAMIC
DYNAMIC
2 V
DS(on)
,
D
= 4 A
I
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 2 0 V I
D
= 4 A
0 ,
R
g
= 5 W ,V
D S
=10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Modified MOSPOWER
symbol showing
the integral P-N
J n t o r c i i r.
ucin etfe
G
D
COM140T - COM440T
S
T
C
= 25 C I
S
= -18 A, V
G S
= 0
,
T
J
= 150 C I
F
=I
S
,
,
d
F
/ds = 100 A/ms
l
2
3.1
COM140T - COM440T
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted)
T
Parameter
V
D S
V
D G R
I @ T
C
= 25°C
D
I @ T
C
= 100°C
D
I
M
D
V
G S
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
G S
= 1 M )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2
2
COM140T
100
100
± 14
± 14
± 56
± 20
125
50
10
.
.015
COM240T COM340T COM440T
200
200
± 14
± 11
± 56
± 20
125
50
10
.
.015
400
400
± 10
±6
± 40
± 20
125
50
10
.
.015
500
500
±8
±5
± 32
± 20
125
50
10
.
.015
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
2%.
-55 to 150
300
-55 to 150 -55 to 150 -55 to 150
300
300
300
°C
°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle
2 Package pin limitation = 10 Amps
THERMAL RESISTA N C E
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.00
65
°C/W
°C/W
Free Air Operation
POWER DERATING
MECHANICAL OUTLINE
TO-257
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
3.1
.150
.140
.750
.500
.005
.035
.025
.100 TYP.
.120 TYP.
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246
