PROCESS
Small Signal Transistor
CP257
Central
TM
NPN - High Voltage Darlington Transistor Chip
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
28,250
PRINCIPAL DEVICE TYPES
MPSA28
MPSA29
CMPTA29
EPITAXIAL PLANAR
20 x 20 MILS
8.0 MILS
4.9 x 4.9 MILS
6.4 x 6.4 MILS
Al - 30,000Å
Au - 16,000Å
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-September 2003)
Central
TM
PROCESS
CP257
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-September 2003)