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CPH3360

SMALL SIGNAL, FET
小信号, 场效应晶体管

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
包装说明
,
Reach Compliance Code
compli
配置
Single
最大漏极电流 (Abs) (ID)
1.6 A
FET 技术
METAL-OXIDE SEMICONDUCTOR
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
极性/信道类型
P-CHANNEL
最大功率耗散 (Abs)
0.9 W
表面贴装
YES
文档预览
CPH3360
Power MOSFET
–30V, 303mΩ, –1.6A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
High Speed Switching
4V drive
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING
at Ta = 25°C
(Note 1, 2)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW
10μs, duty cycle
1%
Power Dissipation
When mounted on ceramic substrate
2
(900mm
×
0.8mm)
Junction Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Value
−30
±20
−1.6
−6.4
Unit
V
V
A
A
2
1
1 : Gate
2 : Source
3 : Drain
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VDSS
−30V
RDS(on) Max
303mΩ@
−10V
532mΩ@
−4.5V
617mΩ@
−4V
ID Max
−1.6A
ELECTRICAL CONNECTION
P-Channel
3
0.9
150
W
°C
PACKING TYPE : TL
MARKING
Storage Temperature
Tstg
−55
to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
*Machine Model
WS
TL
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
2
(900mm
×
0.8mm)
Symbol
R
θJA
Value
138.8
Unit
°C/W
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 2
1
Publication Order Number :
CPH3360/D
LOT No.
CPH3360
ELECTRICAL CHARACTERISTICS
at Ta
=
25°C
(Note 3)
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=−15V, VGS=−10V, ID=−1.6A
See specified Test Circuit
VDS=−10V, f=1MHz
Conditions
ID=−1mA, VGS=0V
VDS=−30V, VGS=0V
VGS=±16V, VDS=0V
VDS=−10V, ID=−1mA
VDS=−10V, ID=−0.8A
ID=−0.8A, VGS=−10V
ID=−0.4A, VGS=−4.5V
ID=−0.4A, VGS=−4V
−1.2
1.3
233
380
441
82
22
16
4.0
3.3
12
5.4
2.2
0.36
0.49
303
532
617
Value
min
−30
−1
±10
−2.6
typ
max
Unit
V
μA
μA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VSD
Forward Diode Voltage
IS=−1.6A, VGS=0V
−0.9
−1.5
V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--10V
VIN
VIN
D
VDD= --15V
ID= --0.8A
RL=18.75Ω
VOUT
PW=10μs
D.C.≤1%
G
P.G
50Ω
CPH3360
S
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2
CPH3360
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3
CPH3360
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4
CPH3360
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
1 : Gate
2 : Source
3 : Drain
Recommended
Soldering Footprint
0.6
1.4
0.95
0.95
ORDERING INFORMATION
Device
CPH3360-TL-H
WS
CPH3360-TL-W
Marking
Package
CPH3
SC-59, SOT-23, TO-236
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the CPH3360 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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5
2.4
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参数对比
与CPH3360相近的元器件有:CPH3360-TL-H。描述及对比如下:
型号 CPH3360 CPH3360-TL-H
描述 SMALL SIGNAL, FET SMALL SIGNAL, FET
是否Rohs认证 符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
Reach Compliance Code compli compli
配置 Single SINGLE WITH BUILT-IN DIODE
最大漏极电流 (Abs) (ID) 1.6 A 1.6 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
极性/信道类型 P-CHANNEL P-CHANNEL
最大功率耗散 (Abs) 0.9 W 0.9 W
表面贴装 YES YES
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