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DDTA123TCA-13

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

器件类别：分立半导体    晶体管   

厂商名称：Diodes Incorporated

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Diodes Incorporated
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
235
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
10
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
文档预览
SPICE MODELS: DDTA113TCA DDTA123TCA DDTA143TCA DDTA114TCA DDTA124TCA DDTA144TCA DDTA115TCA DDTA125TCA
DDTA
(R1-ONLY SERIES)
CA
PNP PRE-BIASED SMALL SIGNAL SOT-23
SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDTC)
Built-In Biasing Resistor, R1 only
Available in Lead Free/RoHS Compliant Version (Note 2)
C
TOP VIEW
A
SOT-23
B
E
C
Dim
A
B
C
D
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23 Molded Plastic
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Marking: Date Code and Type Code (See Table Below &
Page 2)
Ordering Information (See Page 2)
Weight: 0.008 grams (approximate)
E
B
D
G
H
K
J
L
M
E
G
H
J
K
L
M
a
R
1
B
C
E
SCHEMATIC DIAGRAM
All Dimensions in mm
P/N
DDTA113TCA
DDTA123TCA
DDTA143TCA
DDTA114TCA
DDTA124TCA
DDTA144TCA
DDTA115TCA
DDTA125TCA
R1 (NOM)
1KW
2.2KW
4.7KW
10KW
22KW
47KW
100KW
200KW
Type Code
P01
P03
P07
P12
P16
P19
P23
P25
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
Value
-50
-50
-5
-100
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30335 Rev. 4 - 2
1 of 3
www.diodes.com
DDTA (R1-ONLY SERIES) CA
ã
Diodes Incorporated
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-50
-50
-5
¾
¾
Typ
¾
¾
¾
¾
¾
Max Unit
¾
¾
¾
-0.5
-0.5
V
V
V
mA
mA
I
C
= -50mA
I
C
= -1mA
I
E
= -50mA
V
CB
= -50V
V
EB
= -4V
I
C/
I
B
= -10mA/-1mA
I
C/
I
B
= -5mA/-0.5mA
I
C/
I
B
= -2.5mA/-.25mA
I
C/
I
B
= -1mA/-.1mA
I
C/
I
B
= -5mA-/0.5mA
I
C/
I
B
= -2.5mA/-.25mA
I
C/
I
B
= -1mA/-0.1mA
I
C/
I
B
= -.5mA/-.05mA
I
C
= -1mA, V
CE
= -5V
¾
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
DDTA113TCA
DDTA123TCA
DDTA143TCA
DDTA114TCA
DDTA124TCA
DDTA144TCA
DDTA115TCA
DDTA125TCA
Test Condition
NEW PRODUCT
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
V
CE(sat)
¾
¾
-0.3
V
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
h
FE
DR
1
f
T
100
-30
¾
250
¾
250
600
+30
¾
¾
%
MHz
Ordering Information
Device
DDTA113TCA-7
DDTA123TCA-7
DDTA143TCA-7
DDTA114TCA-7
DDTA124TCA-7
DDTA144TCA-7
DDTA115TCA-7
DDTA125TCA-7
Notes:
(Note 3)
Packaging
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DDTA125TCA-7-F.
Marking Information
XXX
Date Code Key
Year
Code
Month
Code
Jan
1
2002
N
Feb
2
2003
P
March
3
XXX = Product Type Marking Code, See Table on Page 1
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
2004
R
Apr
4
2005
S
May
5
Jun
6
2006
T
Jul
7
Aug
8
2007
U
Sep
9
2008
V
Oct
O
Nov
N
2009
W
Dec
D
DS30335 Rev. 4 - 2
2 of 3
www.diodes.com
DDTA (R1-ONLY SERIES) CA
TYPICAL CURVES - DDTA114TCA
NEW PRODUCT
V
CE(SAT)
, MAXIMUM COLLECTOR VOLTAGE (V)
250
P
D
, POWER DISSIPATION (MILLIWATTS)
1
I
C
/I
B
= 10
200
0.1
75°C
25°C
-25°C
150
100
0.01
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
0.001
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 V
CE(SAT)
vs. I
C
1000
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
CE
= 10
75°C
12
I
E
= 0V
10
25°C
-25°C
C
OB
, CAPACITANCE (pF)
100
8
6
4
2
0
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
75°C
0
100
5
10
15
20
25
30
V
R
, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
10
V
O
= 0.2
100
I
C
, COLLECTOR CURRENT (mA)
25°C
10
V
in
, INPUT VOLTAGE (V)
-25°C
1
-25°C
1
75°C
25°C
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
V
in
, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
DS30335 Rev. 4 - 2
3 of 3
www.diodes.com
DDTA (R1-ONLY SERIES) CA
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参数对比
与DDTA123TCA-13相近的元器件有：DDTA124TCA-13、DDTA143TCA-13、DDTA113TCA-13、DDTA144TCA-13、DDTA114TCA-13。描述及对比如下：
型号 DDTA123TCA-13 DDTA124TCA-13 DDTA143TCA-13 DDTA113TCA-13 DDTA144TCA-13 DDTA114TCA-13
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 100 100 100 100 100 100
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 235 235 235 235 235 235
极性/信道类型 PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 10 10 10 10 10 10
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
厂商名称 Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated - -
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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